公开(公告)号：EP2822039A4

公开(公告)日：2015-10-07

申请号：EP13847740

申请日：2013-10-11

申请人： FUJI ELECTRIC CO LTD

发明人： ONOZAWA YUICHI ,  TAKAHASHI HIDENORI ,  YOSHIMURA TAKASHI

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L29/739

CPC分类号： H01L29/7397 ,  H01L29/0619 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41708 ,  H01L29/42304 ,  H01L29/4236 ,  H01L29/4238 ,  H01L29/4916 ,  H01L29/66348 ,  H01L29/7811 ,  H01L29/7813

摘要： A semiconductor device includes: a first gate electrode (22a) that is provided on a first insulating film along one side wall of a first trench (21) and is provided in a second trench (40); a shield electrode (22b) that is provided on a second insulating film along the other side wall of the first trench (21) and is provided in a third trench (50); a gate runner that is an extended portion of the second trench (40), has a portion which is provided on the first gate electrode (22a), and is connected to the first gate electrode (22a); and an emitter polysilicon layer (25a) that is an extended portion of the third trench (50), has a portion which is provided on the shield electrode (22b), and is connected to the shield electrode (22b). According to the semiconductor device, it is possible to improve turn-on characteristics with a slight increase in the number of process steps, while preventing an increase in costs and a reduction in yield.