摘要:
Process for generating moisture for use in semiconductor manufacturing, the process comprising feeding hydrogen and oxygen into a reactor provided with a platinum-coated catalyst layer on an interior wall, thus enhancing the reactivity between hydrogen and oxygen by catalytic action and instantaneously reacting the reactivity-enhanced hydrogen and oxygen at a temperature below the ignition point to produce moisture without undergoing combustion at a high temperature, wherein the amount of unreacted hydrogen occurring in the generated moisture in starting up or terminating the moisture generating reaction is minimized and wherein undesired reactions such as undesired silicon oxide film coating are avoided. When the generation of moisture is started up by feeding hydrogen and oxygen into the reactor provided with a platinum-coated catalyst layer on the inside wall thereof, oxygen first starts to be fed and, some time after that, the supply of hydrogen is begun. In terminating the moisture generating operation by cutting off the supply of hydrogen and oxygen into the reactor, the feeding of hydrogen is first stopped and, some time after that, the supply of oxygen is shut off.
摘要:
The invention further reduces a size and cost of a reactor for generating water from oxygen and hydrogen, provides high-purity water in an amount necessary for practical use safely, stably and continuously, and allows a platinum-coated catalyst layer formed on an inner wall of a reactor body to maintain high catalytic activity over a long period of time. Specifically, the reactor comprises a body made of a heat-resistant material and having an inlet and an outlet for water/moisture gas, has a gas-diffusing member provided in an internal space of the body, and has a platinum coating on an internal wall surface of the body. Hydrogen and oxygen fed from the inlet is diffused by the gas-diffusing member and then comes into contact with the platinum coating to enhance reactivity, thereby producing water from hydrogen and oxygen. A temperature of the reactor for generating moisture, wherein hydrogen is reacted with oxygen at a high temperature to generate moisture, is held to be below an ignition temperature of hydrogen or a hydrogen-containing gas so that hydrogen is reacted with oxygen while preventing explosive combustion of hydrogen and oxygen. The platinum-coated catalyst layer on the internal wall of the reactor body is formed by treating the surface of the internal wall of the body, cleaning the treated surface, forming a barrier coating of a nonmetallic material of an oxide or nitride on the wall surface, and forming the platinum coating on the barrier coating.
摘要:
A method of generating water for use in semiconductor production which comprises feeding hydrogen and oxygen into a reactor body whose inner wall surface has a platinum coating to heighten the reactivity of the hydrogen and oxygen by the catalytic action of the platinum and instantaneously react the resultant hydrogen and oxygen with each other at a temperature lower than the ignition temperature of the hydrogen-containing mixed gas to thereby generate water without conducting high-temperature combustion, wherein the amount of unreacted hydrogen remaining in the generated water when the reactor for water generation is started and stopped is reduced to thereby enhance the safety of the apparatus for semiconductor production and prevent the inhibition of, e.g., silicon oxide film deposition by the water oxidation method. Specifically, in generating water by feeding hydrogen and oxygen into a reactor body whose inner wall surface has a platinum coating, the feeding of oxygen is initiated first and hydrogen feeding is initiated slightly thereafter. In stopping the water generation by stopping the feeding of hydrogen and oxygen into the reactor body, the feeding of hydrogen is stopped first and oxygen feeding is stopped slightly thereafter.
摘要:
Summary The present invention provides a vacuum thermal insulating valve that may be used at high temperature in gas supply systems or gas exhaust systems, and also may be made substantially small and compact in size owing to its excellent thermal insulating performance. With a vacuum thermal insulating valve comprising a valve equipped with a valve body and an actuator, and a vacuum thermal insulating box that houses the valve, the afore-mentioned vacuum thermal insulating box S is formed by a square-shaped lower vacuum jacket S 5 having a cylinder-shaped vacuum thermal insulating pipe receiving part J on a side and with its upper face made open, and the square-shaped upper vacuum jackets S 4 , which is hermetically fitted to the lower vacuum jacket S 5 and with its lower face made open.