公开(公告)号：EP0922667A1

公开(公告)日：1999-06-16

申请号：EP98924654.1

申请日：1998-06-12

申请人： FUJIKIN Inc. ,  OHMI, Tadahiro

发明人： OHMI, Tadahiro ,  MINAMI, Yukio ,  KAWADA, Koji ,  TANABE, Yoshikazu ,  IKEDA, Nobukazu ,  MORIMOTO, Akihiro

IPC分类号： C01B5/00

CPC分类号： C01B5/00

摘要： Process for generating moisture for use in semiconductor manufacturing, the process comprising feeding hydrogen and oxygen into a reactor provided with a platinum-coated catalyst layer on an interior wall, thus enhancing the reactivity between hydrogen and oxygen by catalytic action and instantaneously reacting the reactivity-enhanced hydrogen and oxygen at a temperature below the ignition point to produce moisture without undergoing combustion at a high temperature, wherein the amount of unreacted hydrogen occurring in the generated moisture in starting up or terminating the moisture generating reaction is minimized and wherein undesired reactions such as undesired silicon oxide film coating are avoided. When the generation of moisture is started up by feeding hydrogen and oxygen into the reactor provided with a platinum-coated catalyst layer on the inside wall thereof, oxygen first starts to be fed and, some time after that, the supply of hydrogen is begun. In terminating the moisture generating operation by cutting off the supply of hydrogen and oxygen into the reactor, the feeding of hydrogen is first stopped and, some time after that, the supply of oxygen is shut off.

摘要翻译： 用于产生用于半导体制造中的湿气的方法，该方法包括将氢和氧进料到在内壁上设置有铂涂覆的催化剂层的反应器中，从而通过催化作用增强氢和氧之间的反应性，并使反应性 - 在低于点火点的温度下增强氢气和氧气，以产生水分，而不会在高温下经历燃烧，其中在产生水分的反应中启动或终止发生的水分中发生的未反应的氢气的量最小化，并且其中不期望的反应如 避免了不需要的氧化硅膜涂层。 当通过在其内壁上提供有铂包覆的催化剂层的反应器中加入氢气和氧气来启动水分的产生时，首先开始供给氧气，然后一段时间开始供应氢气。 在通过切断氢气和氧气进入反应器来终止湿气产生操作时，首先停止氢的供给，一段时间后，关闭氧气供应。

公开(公告)号：EP0922667B1

公开(公告)日：2004-08-25

申请号：EP98924654.1

申请日：1998-06-12

申请人： FUJIKIN Inc. ,  Ohmi, Tadahiro

发明人： OHMI, Tadahiro ,  MINAMI, Yukio ,  KAWADA, Koji ,  TANABE, Yoshikazu ,  IKEDA, Nobukazu ,  MORIMOTO, Akihiro

IPC分类号： C01B5/00

CPC分类号： C01B5/00

摘要： A method of generating water for use in semiconductor production which comprises feeding hydrogen and oxygen into a reactor body whose inner wall surface has a platinum coating to heighten the reactivity of the hydrogen and oxygen by the catalytic action of the platinum and instantaneously react the resultant hydrogen and oxygen with each other at a temperature lower than the ignition temperature of the hydrogen-containing mixed gas to thereby generate water without conducting high-temperature combustion, wherein the amount of unreacted hydrogen remaining in the generated water when the reactor for water generation is started and stopped is reduced to thereby enhance the safety of the apparatus for semiconductor production and prevent the inhibition of, e.g., silicon oxide film deposition by the water oxidation method. Specifically, in generating water by feeding hydrogen and oxygen into a reactor body whose inner wall surface has a platinum coating, the feeding of oxygen is initiated first and hydrogen feeding is initiated slightly thereafter. In stopping the water generation by stopping the feeding of hydrogen and oxygen into the reactor body, the feeding of hydrogen is stopped first and oxygen feeding is stopped slightly thereafter.