公开(公告)号：EP0322161A2

公开(公告)日：1989-06-28

申请号：EP88311912.5

申请日：1988-12-16

申请人： FUJITSU LIMITED

发明人： Furumura, Yuji ,  Mieno, Fumitake ,  Eshita, Takashi ,  Itoh, Kikuo ,  Doki, Masahiko

IPC分类号： H01L29/41 ,  H01L29/24

CPC分类号： H01L29/456

摘要： An excellent barrier layer (13A, 13B) can be formed by silicon carbide between a silicon substrate (11) or layer and a metal layer because silicon carbide has many properties similar to those of silicon, has a very slow diffusion rate of a metal through the silicon carbide, or prevents a diffusion of a metal into the silicon, and can be deposited by CVD which has an advantage of a good coverage over a step portion such as a contact window.

摘要翻译： 由于碳化硅具有与硅类似的许多性质，因此在硅衬底（11）或层与金属层之间可以由碳化硅形成优异的阻挡层（13A，13B），具有非常缓慢的金属扩散速率 碳化硅，或防止金属扩散到硅中，并且可以通过CVD沉积，其具有比诸如接触窗口的台阶部分更好的覆盖的优点。

公开(公告)号：EP0322615B1

公开(公告)日：1993-03-10

申请号：EP88120580.1

申请日：1988-12-09

申请人： FUJITSU LIMITED

发明人： Eshita, Takashi ,  Mieno, Fumitake Saginumadai ,  Furumura, Yuji ,  Itoh, Kikuo

IPC分类号： C30B25/02 ,  C30B29/36 ,  H01L21/365

CPC分类号： C30B25/02 ,  C30B29/36 ,  Y10S117/902 ,  Y10S148/148

摘要： A single crystalline silicon carbide ( beta -SiC) layer having a thickness greater than 1 mu m is grown on a silicon substrate by the following method of the present invention. The silicon substrate is provided in a reactor chamber, and the reactor chamber is evacuated and maintained at a reduced atmospheric pressure during the growing processes. While flowing a mixed gas containing acetylene into the reactor chamber, the substrate is heated up at a temperature range from 800 to 1000 DEG C, preferably in a range from 810 to 850 DEG C, whereby a buffer layer of carbonized silicon having a thickness of 60 to 100 ANGSTROM is grown on the substrate. Thereafter, the flowing gas is changed to a mixed gas containing hydrocarbon and chlorosilane, and the substrate temperature is raised to a temperature from 850 to 950 DEG C. In this process, a single crystalline beta -SiC layer can be grown on the buffer layer, and a thickness of a few mu m for the grown beta -SiC layer can be expected.

公开(公告)号：EP0322161B1

公开(公告)日：1995-03-15

申请号：EP88311912.5

申请日：1988-12-16

申请人： FUJITSU LIMITED

发明人： Furumura, Yuji ,  Mieno, Fumitake ,  Eshita, Takashi ,  Itoh, Kikuo ,  Doki, Masahiko

IPC分类号： H01L29/41 ,  H01L29/24

CPC分类号： H01L29/456

公开(公告)号：EP0322161A3

公开(公告)日：1990-01-17

申请号：EP88311912.5

申请日：1988-12-16

申请人： FUJITSU LIMITED

发明人： Furumura, Yuji ,  Mieno, Fumitake ,  Eshita, Takashi ,  Itoh, Kikuo ,  Doki, Masahiko

IPC分类号： H01L29/41 ,  H01L29/24

CPC分类号： H01L29/456

摘要： An excellent barrier layer (13A, 13B) can be formed by silicon carbide between a silicon substrate (11) or layer and a metal layer because silicon carbide has many properties similar to those of silicon, has a very slow diffusion rate of a metal through the silicon carbide, or prevents a diffusion of a metal into the silicon, and can be deposited by CVD which has an advantage of a good coverage over a step portion such as a contact window.

公开(公告)号：EP0322615A1

公开(公告)日：1989-07-05

申请号：EP88120580.1

申请日：1988-12-09

申请人： FUJITSU LIMITED

发明人： Eshita, Takashi ,  Mieno, Fumitake Saginumadai ,  Furumura, Yuji ,  Itoh, Kikuo

IPC分类号： C30B25/02 ,  C30B29/36 ,  H01L21/365

CPC分类号： C30B25/02 ,  C30B29/36 ,  Y10S117/902 ,  Y10S148/148

摘要： A single crystalline silicon carbide (β-SiC) layer having a thickness greater than 1 µm is grown on a silicon substrate by the following method of the present invention. The silicon substrate is provided in a reactor chamber, and the reactor chamber is evacuated and maintained at a reduced atmospheric pressure during the growing processes. While flowing a mixed gas containing acetylene into the reactor chamber, the substrate is heated up at a temperature range from 800 to 1000 °C, preferably in a range from 810 to 850 C, whereby a buffer layer of carbonized silicon having a thickness of 60 to 100 A is grown on the substrate. Thereafter, the flowing gas is changed to a mixed gas containing hydrocarbon and chlorosilane, and the substrate temperature is raised to a temperature from 850 to 950 ° C. In this process, a single crystalline β-SiC layer can be grown on the buffer layer, and a thickness of a few µm for the grown β-SiC layer can be expected.

摘要翻译： 单晶碳化硅（SiC的β）层的厚度大于1微米的通过本发明的下列方法生长在硅衬底上。 硅衬底在反应器室在生长过程提供，并在反应室抽空并维持在降低的大气压。 而流动的混合气体含乙炔到反应器腔室中，所述基板是在温度范围内加热为800〜1000℃，优选的范围为810至850℃，由此形成厚度为碳化硅的缓冲层 60至100埃生长在衬底上。 那里之后，流动气体改变为含烃和氯硅烷的混合气体，将基板温度升高到850〜950℃的温度。在此过程中，一个单一的结晶态的β-SiC层可以在缓冲层上生长 ，并且可以预期的厚度的几微米的β-内的SiC生长层。