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公开(公告)号：EP0693222A1
公开(公告)日：1996-01-24
申请号：EP94907248.0
申请日：1994-01-20
CPC分类号： H01L29/7802 , H01L21/046 , H01L29/1608 , H01L29/66068 , Y10S148/148 , Y10S438/931
摘要： A silicon carbide field effect transfer of the present invention includes a base and source region each formed by a series of amorphizing, implanting and recrystallizing steps. Moreover, the drain, base and source regions extend to a face of a monocrystalline silicon carbide substrate and the source and base regions comprise substantially monocrystalline silicon carbide formed from recrystallized amorphous silicon carbide. The source and base regions also have vertical sidewalls defining the p-n junction between the source/base and base/drain regions, respectively. The vertical orientation of the sidewalls arises from the respective implantation of electrically inactive ions into the substrate during the amorphizing steps for forming the base region in the drain and for forming the source region in the base region. The electrically inactive ions are selected from the group consisting of silicon, hydrogen, neon, helium, carbon and argon. A gate and gate insulating region are also provided on the face of the substrate above the base region. By applying an appropriate turn-on bias signal to the gate, a channel is created in the base region. The channel region electrically connects the source to the drain. The source and base are also electrically connected by a source contact on the face, opposite the portion of the base region wherein the channel is formed.
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2.发明授权Semiconductor memory device having a charge barrier layer and method for producing the same 失效具有充电障碍层的半导体存储器件及其制造方法
公开(公告)号：EP0317257B1
公开(公告)日：1993-01-13
申请号：EP88310760.9
申请日：1988-11-15
申请人： FUJITSU LIMITED
发明人： Ema, Taiji
CPC分类号： H01L29/1083 , H01L21/74 , H01L27/10808 , Y10S148/148
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公开(公告)号：EP0269439A2
公开(公告)日：1988-06-01
申请号：EP87310423.6
申请日：1987-11-25
发明人： Shigeta, Mitsuhiro , Suzuki, Akira , Furukawa, Katsuki , Fujii, Yoshihisa , Hatano, Akitsugu , Uemoto, Atsuko , Nakanishi, Kenji
IPC分类号： C30B25/02 , C30B29/36 , C30B25/18 , H01L21/365
CPC分类号： C30B25/18 , C30B25/02 , C30B29/36 , Y10S148/029 , Y10S148/072 , Y10S148/097 , Y10S148/148 , Y10S438/938
摘要： A heteroepitaxial growth method comprising growing a semiconductor single-crystal film (8) on a semiconductor single-crystal substrate (A) with a lattice constant (a1) different from that (b1) of the semiconductor single-crystal film (B) by chemical vapor deposition, the epitaxial orientation of the semiconductor single-crystal film (B) being inclined at a certain angle (1°-30°) with respect to the semiconductor single-crystal substrate (A).
摘要翻译： 异质外延生长方法包括通过化学式在半导体单晶衬底（A）上生长具有与半导体单晶膜（B）的晶格常数（a1）不同的晶格常数（a1）的半导体单晶膜（8） 半导体单晶膜（B）的外延取向相对于半导体单晶衬底（A）倾斜一定角度（1°-30°）。
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公开(公告)号：EP0389533B2
公开(公告)日：2004-12-22
申请号：EP88910210.9
申请日：1988-10-26
CPC分类号： H01L33/0054 , C30B23/00 , C30B29/36 , Y10S148/021 , Y10S148/148
摘要： A method of forming large device quality single crystals of silicon carbide (33). A monocrystalline seed crystal (32) of silicon carbide of the desired polytype and a silicon carbide source powder (40) are introduced into a sublimation system and the source powder is heated to a temperature sufficient to enable it to sublime. The growth surface of the seed crystal is also heated to a somewhat lower temperature than that of the source powder and there is generated and maintained a constant flow of vaporized Si, Si2C and SiC2 per unit area per unit time from the source powder to the growth surface of the seed crystal. The constant flow is maintained by a method which includes maintaining a constant thermal gradient as measured between the growth surface of the seed crystal and the source powder as the crystal grows and the source powder is used up, while maintaining the growth surface of the seed crystal and the source powder at their respective different temperatures, thereby maintaining a constant growth rate of the single seed crystal and a consistent growth of a single polytype on the single growth surface thereof.
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公开(公告)号：EP0712150B1
公开(公告)日：2002-02-06
申请号：EP95202796.9
申请日：1988-10-26
IPC分类号： H01L21/205
CPC分类号： H01L33/0054 , C30B23/00 , C30B29/36 , Y10S148/021 , Y10S148/148
摘要： A method of forming large device quality single crystals of silicon carbide (33). A monocrystalline seed crystal (32) of silicon carbide of the desired polytype and a silicon carbide source powder (40) are introduced into a sublimation system and the source powder is heated to a temperature sufficient to enable it to sublime. The growth surface of the seed crystal is also heated to a somewhat lower temperature than that of the source powder and there is generated and maintained a constant flow of vaporized Si, Si2C and SiC2 per unit area per unit time from the source powder to the growth surface of the seed crystal. The constant flow is maintained by a method which includes maintaining a constant thermal gradient as measured between the growth surface of the seed crystal and the source powder as the crystal grows and the source powder is used up, while maintaining the growth surface of the seed crystal and the source powder at their respective different temperatures, thereby maintaining a constant growth rate of the single seed crystal and a consistent growth of a single polytype on the single growth surface thereof.
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公开(公告)号：EP0635882A3
公开(公告)日：1995-10-11
申请号：EP94109896.4
申请日：1994-06-27
申请人： MOTOROLA, INC.
CPC分类号： H01L29/7802 , H01L29/1608 , H01L29/41766 , H01L29/66068 , H01L29/78 , Y10S148/148
摘要： A silicon carbide vertical MOSFET (30, 60) formed on a silicon carbide substrate (35, 65) with portions of epitaxial layers (39, 48 or 69, 78) defining the various transistor electrodes, rather than defining the electrodes with implants and diffusion. An opening (40, 70) is formed in some of the epitaxial layers and a conductive layer (48, 85) is formed therein to electrically connect a drain contact (95) on the rear of the substrate to the components on the front of the substrate.
摘要翻译： 碳化硅垂直MOSFET（30,60）形成在碳化硅衬底（35,65）上，外延层（39,48或69,78）的一部分限定各种晶体管电极，而不是用注入和扩散来限定电极 。 在一些外延层中形成开口（40,70），并在其中形成导电层（48,85），以将衬底背面上的漏极触点（95）电连接到衬底背面上的元件 基质。
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公开(公告)号：EP0389533A4
公开(公告)日：1992-12-09
申请号：EP88910210
申请日：1988-10-26
IPC分类号： C30B29/36 , C30B23/00 , H01L21/203 , H01L21/205 , H01L33/00
CPC分类号： H01L33/0054 , C30B23/00 , C30B29/36 , Y10S148/021 , Y10S148/148
摘要： A method of forming large device quality single crystals of silicon carbide (33). A monocrystalline seed crystal (32) of silicon carbide of the desired polytype and a silicon carbide source powder (40) are introduced into a sublimation system and the source powder is heated to a temperature sufficient to enable it to sublime. The growth surface of the seed crystal is also heated to a somewhat lower temperature than that of the source powder and there is generated and maintained a constant flow of vaporized Si, Si2C and SiC2 per unit area per unit time from the source powder to the growth surface of the seed crystal. The constant flow is maintained by a method which includes maintaining a constant thermal gradient as measured between the growth surface of the seed crystal and the source powder as the crystal grows and the source powder is used up, while maintaining the growth surface of the seed crystal and the source powder at their respective different temperatures, thereby maintaining a constant growth rate of the single seed crystal and a consistent growth of a single polytype on the single growth surface thereof.
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公开(公告)号：EP0317445A2
公开(公告)日：1989-05-24
申请号：EP88402910.9
申请日：1988-11-18
申请人： FUJITSU LIMITED
发明人： Gotou, Hiroshi
IPC分类号： H01L21/36
CPC分类号： H01L29/1608 , H01L21/7602 , H01L29/66068 , H01L29/78684 , Y10S148/135 , Y10S148/148
摘要： Two realizations of a method are disclosed for fabricating semiconductor substrate having an S0I β -SiC on insulator structure. In the first realization, two substrates are prepared. The first substrate is silicon coated with SIO₂ ; the second substrate is silicon on which β -SiC is hetero-epitaxially grown. These substrates are bonded to each other by a heating process. During the heating process, anodic bonding may be applied. The bonded substrate is then etched or mechanically polished off from the side of the second substrate, to expose the β -SiC layer. In the second realization, β -SiC is grown on a silicon substrate. The surface of the substrate is coated with SiO₂ ; then polysilicon or poly-SiC is deposited on the surface of the β-SiC side. The substrate is then etched or mechanically polished from the side of the silicon substrate to expose the β -SiC.
摘要翻译： 公开了一种用于制造具有绝缘体上的S0I-β-SiC的半导体衬底的方法的两种实现。 在第一个实现中，准备了两个基板。 第一衬底是用SIO2硅涂覆的; 第二衬底是其上β-SiC异质生长的硅。 这些基板通过加热工艺相互结合。 在加热过程中，可以进行阳极接合。 然后将键合的衬底从第二衬底的侧面蚀刻或机械抛光，以暴露β-SiC层。 在第二个实现中，β-SiC生长在硅衬底上。 衬底的表面涂有SiO2; 则多晶硅或多晶硅沉积在β-SiC侧的表面上。 然后将衬底从硅衬底的侧面蚀刻或机械抛光以暴露β-SiC。
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公开(公告)号：EP0659298B1
公开(公告)日：1999-03-17
申请号：EP93921460.7
申请日：1993-09-10
CPC分类号： H01L29/1608 , H01L21/0485 , H01L29/45 , Y10S148/148
摘要： A method and resulting ohmic contact structure between a high work function metal such as platinum, and a wide bandgap semiconductor such as silicon carbide, for which the work function of the metal would ordinarily be insufficient to form an ohmic contact between the metal and the semiconductor. The structure can withstand annealing while retaining ohmic characteristics. The ohmic contact structure comprises a portion of single crystal wide bandgap semiconductor material; a contact formed of a high work function metal on the semiconductor portion; and a layer of doped p-type semiconductor material between the single crystal portion and the metal contact. The doped layer has a sufficient concentration of p-type dopant to provide ohmic behavior between the metal and the semiconductor material.
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公开(公告)号：EP0389533B1
公开(公告)日：1996-09-11
申请号：EP88910210.9
申请日：1988-10-26
CPC分类号： H01L33/0054 , C30B23/00 , C30B29/36 , Y10S148/021 , Y10S148/148
摘要： A method of forming large device quality single crystals of silicon carbide (33). A monocrystalline seed crystal (32) of silicon carbide of the desired polytype and a silicon carbide source powder (40) are introduced into a sublimation system and the source powder is heated to a temperature sufficient to enable it to sublime. The growth surface of the seed crystal is also heated to a somewhat lower temperature than that of the source powder and there is generated and maintained a constant flow of vaporized Si, Si2C and SiC2 per unit area per unit time from the source powder to the growth surface of the seed crystal. The constant flow is maintained by a method which includes maintaining a constant thermal gradient as measured between the growth surface of the seed crystal and the source powder as the crystal grows and the source powder is used up, while maintaining the growth surface of the seed crystal and the source powder at their respective different temperatures, thereby maintaining a constant growth rate of the single seed crystal and a consistent growth of a single polytype on the single growth surface thereof.
摘要翻译： 本发明是一种形成碳化硅（33）的大器件质量单晶的方法。 升华过程通过保持源材料（40）中的恒定多型组合物，源材料（40）中的选定尺寸分布，通过晶种（32）的生长表面的特定制备以及通过控制热梯度 在源材料（40）和晶种（32）之间。
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