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1.发明公开Process for fabricating an optical device for generating a second harmonic optical beam 失效用于制造用于产生第二谐波光束的光学装置的方法
公开(公告)号：EP0532969A3
公开(公告)日：1993-10-27
申请号：EP92114873.0
申请日：1992-08-31
申请人： FUJITSU LIMITED
发明人： Sawaki, Ippei, c/o FUJITSU LIMITED , Kurimura, Sunao, c/o FUJITSU LIMITED , Miura, Michio, c/o FUJITSU LIMITED
CPC分类号： H01G7/06 , G02F1/3558 , G02F1/3775 , G02F2001/3548 , H01L41/257 , Y10T29/42
摘要： A method for fabricating an SHG device by forming an inversion region (4) having a first polarization selectively in a ferroelectric substrate (1) that has a second, opposite polarization. The method comprises the steps of: applying a proton exchange process for exchanging cations in the ferroelectric substrate with protons selectively in correspondence to a region in which the inversion region is to be formed; providing electrodes (5, 6) on upper and lower major surfaces of the ferroelectric substrate; and growing the inversion region selectively in a direction vertical to the upper major surface of the ferroelectric substrate while applying a d.c. voltage to the electrode on the upper major surface of the ferroelectric substrate to induce an electric field acting in a direction coincident to a direction of said first polarization in said ferroelectric substrate.
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2.发明授权Process for fabricating an optical device for generating a second harmonic optical beam 失效一种用于制造光学装置，用于产生一个频率加倍光束方法
公开(公告)号：EP0532969B1
公开(公告)日：1997-12-17
申请号：EP92114873.0
申请日：1992-08-31
申请人： FUJITSU LIMITED
发明人： Sawaki, Ippei, c/o FUJITSU LIMITED , Kurimura, Sunao, c/o FUJITSU LIMITED , Miura, Michio, c/o FUJITSU LIMITED
CPC分类号： H01G7/06 , G02F1/3558 , G02F1/3775 , G02F2001/3548 , H01L41/257 , Y10T29/42
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3.发明公开Process for fabricating an optical device for generating a second harmonic optical beam 失效一种用于制造光学装置，用于产生一个频率加倍光束方法。
公开(公告)号：EP0532969A2
公开(公告)日：1993-03-24
申请号：EP92114873.0
申请日：1992-08-31
申请人： FUJITSU LIMITED
发明人： Sawaki, Ippei, c/o FUJITSU LIMITED , Kurimura, Sunao, c/o FUJITSU LIMITED , Miura, Michio, c/o FUJITSU LIMITED
CPC分类号： H01G7/06 , G02F1/3558 , G02F1/3775 , G02F2001/3548 , H01L41/257 , Y10T29/42
摘要： A method for fabricating an SHG device by forming an inversion region (4) having a first polarization selectively in a ferroelectric substrate (1) that has a second, opposite polarization. The method comprises the steps of: applying a proton exchange process for exchanging cations in the ferroelectric substrate with protons selectively in correspondence to a region in which the inversion region is to be formed; providing electrodes (5, 6) on upper and lower major surfaces of the ferroelectric substrate; and growing the inversion region selectively in a direction vertical to the upper major surface of the ferroelectric substrate while applying a d.c. voltage to the electrode on the upper major surface of the ferroelectric substrate to induce an electric field acting in a direction coincident to a direction of said first polarization in said ferroelectric substrate.
摘要翻译： 一种用于通过在反转区形成（4）具有在强电介质选择性的第一偏振（1）那样制造SHG器件的衬底的方法具有第二，相反的偏振。 该方法包括以下步骤：将质子交换过程，用于选择性地在对应于其中反转区是要被形成的区域与质子在强电介质基片交换阳离子; 在铁电基板的上部和下部主表面提供的电极（6 5）; 和在垂直于铁电体基板的上主表面的方向上选择性地生长反转区域同时施加直流 电压对铁电体基板的上主表面上的电极，以诱导电场作用的底物在重合于在铁电体的所述第一偏振的方向的方向。
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