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    Process for preparation of polysilsesquioxane
    2.
    发明公开
    Process for preparation of polysilsesquioxane 失效
    Verfahren zur Herstellung von Polysilsesquioxanen。

    公开(公告)号：EP0406911A1

    公开(公告)日：1991-01-09

    申请号：EP90114892.4

    申请日：1985-10-31

    申请人： FUJITSU LIMITED

    发明人： Fukuyama, Shun-ichi, Fujitsu Atsusgi-ryo, 3-10 ,  Yoneda, Yasuhiro ,  Miyagawa, Masashi ,  Nishii, Kota ,  Matsuura, Azuma

    IPC分类号： C08G77/06

    CPC分类号： H01L21/02137 ,  C08G77/06 ,  H01B3/46 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/4803 ,  H01L21/481 ,  H01L23/49894 ,  H01L2924/0002 ,  H05K3/4676 ,  Y10S428/90 ,  Y10S428/901 ,  Y10T428/31663 ,  Y10T428/31678 ,  H01L2924/00

    摘要： A process for preparation of polysilsesquioxane having a general formula
    wherein R is CH₃ or C₂H₅ , and n is an integer equal to about 50 to about 10,000, prepared by (a) dissolving methyl or ethyl trifunctional silane in an organic solvent at a temperature of -20°C to -50°C to form an organic solution thereof; (b) hydrolyzing the trifunc­tional silane by dropping water into the organic solu­tion at a temperature of -20°C to -50°C under an inert gas pressurized at 1,000 to 3,000 Pa; and (c) gradually heating the organic solution together with a water phase lying therebeneath up to a temperature of 60°C to 100°C under an inert gas pressurized at 1,000 to 3,000 Pa.

    摘要翻译： 一种制备具有通式的聚倍半硅氧烷的方法，其中R为CH 3或C 2 H 5，n为等于约50至约10,000的整数，其通过以下步骤制备：（a）将甲基或乙基三官能硅烷溶于有机溶剂中 温度为-20℃至-50℃以形成其有机溶液; （b）在加压至1000〜3000Pa的惰性气体下，在-20℃至-50℃的温度下将水滴入有机溶液中，水解三官能硅烷; 和（c）在加压至1000〜3000Pa的惰性气体下，将有机溶液与位于其中的水相一起逐渐加热至60℃至100℃的温度。

    Pattern-forming material and its production and use
    6.
    发明公开
    Pattern-forming material and its production and use 失效
    Bilderzeugendes材料，Herstellung und Anwendung desselben。

    公开(公告)号：EP0163538A2

    公开(公告)日：1985-12-04

    申请号：EP85303811.5

    申请日：1985-05-30

    申请人： FUJITSU LIMITED

    发明人： Fukuyama, Shun-ichi ,  Yoneda, Yasuhiro ,  Miyagawa, Masashi ,  Nishii, Kota

    IPC分类号： G03F7/10

    CPC分类号： G03F7/0757 ,  Y10S438/948

    摘要： A novel high-energy radiation-sensitive pattern-forming sist material consisting of polysilsesquioxane having no 'droxyl groups in its molecule. The pattern-forming mate- il of this invention has an improved sensitivity to high- ergy radiation exposure, a high resistance to dry etching, a gh resolution capability, and an improved thermal stability.

    摘要翻译： 一种由分子中不含羟基的聚倍半硅氧烷组成的新型高能辐射敏感图案形成抗蚀剂材料。 本发明的图案形成材料对高能量辐射曝光具有改进的敏感性，高耐干蚀刻性，高分辨能力和改善的热稳定性。

    Process for formation of insulating layer of silylated polysilsesquioxane on electronic circuit board
    7.
    发明公开
    Process for formation of insulating layer of silylated polysilsesquioxane on electronic circuit board 失效
    一种用于生产电子印刷电路上绝缘甲硅烷基化聚倍半硅氧烷的层的过程。

    公开(公告)号：EP0198976A2

    公开(公告)日：1986-10-29

    申请号：EP85307905.1

    申请日：1985-10-31

    申请人： FUJITSU LIMITED

    发明人： Fukuyama, Shun-ichi ,  Yoneda, Yasuhiro ,  Miyagawa, Masashi ,  Nishii, Kota ,  Matsuura, Azuma

    IPC分类号： C08G77/06 ,  H01B3/46

    CPC分类号： H01L21/02137 ,  C08G77/06 ,  H01B3/46 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/4803 ,  H01L21/481 ,  H01L23/49894 ,  H01L2924/0002 ,  H05K3/4676 ,  Y10S428/90 ,  Y10S428/901 ,  Y10T428/31663 ,  Y10T428/31678 ,  H01L2924/00

    摘要： A lower alkyl polysilsesquioxane having a general formula
    wherein R is lower alkyl, preferably CH 3 or C 2 H 5 , and n is an integer equal to about 50 to about 10,000, prepared by (a) dissolving a lower alkyl trifunctional silane in an organic solvent at a temperature of -20°C to -50°C to form an organic solution thereof; (b) hydrolysing the lower alkyl trifunctional silane by dropping water into the organic solution at a temperature of -20°C to -50°C under an inert gas pressurised at 1,000 to 3,000 Pa; and (c) gradually heating the organic solution together with a water phase lying therebeneath up to a temperature of 60°C to 100°C under an inert gas pressurised at 1,000 to 3,000 Pa.
    Also, a flat surfaced insulating layer of a silylated organopolysilsesquioxane having a general formula
    wherein R' and R 2 are each selected from alkyl and phenyl (preferably methyl or ethyl), and n is an integer equal to about 50 to about 2,000, preferably about 50 to about 500, formed on a circuit board having stepwise differences in height thereon, by applying an organic solution of the polymer; evaporating the solvent; and melting the polymer to flatten the surface of the polymer and curing the polymer.

    摘要翻译： 具有通式A的低级烷基聚倍半硅氧烷... ... worin R是低级烷基，优选为CH 3或C 2 H 5，n为约10,000，通过（a）在以溶解的低级烷基的三官能硅烷制备等于约50的整数 在-20℃至-50℃的温度下有机溶剂以形成在其有机溶液：（b）以在-20℃的温度下滴加水进入有机溶液至-50℃水解低级烷基硅烷的三官能 在1000加压至3000帕的惰性气体下℃; 和（c）逐渐在1000加压至3000帕的惰性气体下，水相位于其下方高达60℃至100℃的温度下一起加热的有机溶液。 ... 因此，扁平浮出水面具有通式甲硅烷基化的organopolysilsesquioxane绝缘层... ... worin - [R <1>和R <2>由烷基和苯基（优选甲基或乙基），每个选择，并且 n为等于约50的整数至约2,000，优选约50至约500，通过施加到所述聚合物的有机溶液形成在具有其上在高度分段差的电路板; 蒸发溶剂; 和熔化聚合物扁平化聚合物的表面并固化所述聚合物。