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公开(公告)号:EP0255362A3
公开(公告)日:1989-09-13
申请号:EP87306708.6
申请日:1987-07-29
申请人: FUJITSU LIMITED
发明人: Takemae, Yoshihiro , Sato, Kimiaki , Nozaki, Shigeki , Miyahara, Hatsuo , Nakano, Masao , Kodama, Nobumi , Yanagisawa, Makoto Fujitsu dai 2 Nakahara-ryo,1287 , Takada, Yasuhiro , Momozono, Satoshi
IPC分类号: G11C29/00
CPC分类号: G11C29/46
摘要: A semiconductor integrated circuit having first and second power supply lines (Vcc,Vss) for receiving a power supply voltage, an external input terminal (84) for receiving an input signal, and a high voltage detection circuit (6) for detecting at the external input terminal a high voltage higher than a predetermined voltage which is higher than the power supply voltage. The high voltage detection circuit (6) comprises an input circuit (61) connected to the external input terminal (84) for generating a detection voltage; a reference voltage generating circuit (Q31-Q34) for generating a reference voltage; and a differential voltage amplifier (62) connected to receive the detection voltage and the reference voltage for amplifying the difference between the detection voltage and the reference voltage, to thereby determine whether the high voltage is applied. The input circuit comprises a level shift element (Q21-Q25) connected to the external input terminal (84) for providing the detection voltage; an impedance element (Q26-Q27) connected between the level shift element and the second power supply line (Vss); and a leak current compensating element (Q28,Q29) connected between the first power supply line (Vcc) and the level shift element for allowing a current to flow from the first power supply line through the leak current compensating element and the impedance element to the second power supply line when the high voltage is not applied to the external input terminal.
摘要翻译: 一种具有用于接收电源电压的第一和第二电源线(Vcc,Vss)的半导体集成电路,用于接收输入信号的外部输入端子(84)和用于在外部检测的高电压检测电路(6) 输入端子的高电压高于比电源电压高的预定电压。 高电压检测电路(6)包括连接到外部输入端子(84)的输入电路(61),用于产生检测电压; 用于产生参考电压的参考电压产生电路(Q31-Q34) 以及差分电压放大器(62),其被连接以接收用于放大检测电压和参考电压之间的差的检测电压和参考电压,从而确定是否施加高电压。 输入电路包括连接到外部输入端子(84)用于提供检测电压的电平转换元件(Q21-Q25) 连接在电平转换元件和第二电源线(Vss)之间的阻抗元件(Q26-Q27); 和连接在第一电源线(Vcc)和电平转换元件之间的泄漏电流补偿元件(Q28,Q29),用于允许电流从第一电源线流过漏电流补偿元件和阻抗元件到达 当高电压未被施加到外部输入端子时,第二电源线被接通。
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公开(公告)号:EP0240156A2
公开(公告)日:1987-10-07
申请号:EP87301749.5
申请日:1987-02-27
申请人: FUJITSU LIMITED
发明人: Takemae, Yoshihiro , Tatematsu, Takeo , Sato, Kimiaki , Horii, Takashi , Kodama, Nobumi , Yanagisawa, Makoto , Takada, Yasuhiro
摘要: A one-transistor one-capacitor type semi-conductor memory device having a detection circuit (TC) for detecting the electric potential of a word line (WL), to determine an appropriate timing for driving a sense amplifier (SA), thereby improving the speed of memory operations.
摘要翻译: 具有用于检测字线(WL)的电位的检测电路(TC)的单晶体管单电容器型半导体存储器件,以确定用于驱动读出放大器(SA)的适当定时,由此改善 内存操作速度。
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公开(公告)号:EP0255362B1
公开(公告)日:1992-11-25
申请号:EP87306708.6
申请日:1987-07-29
申请人: FUJITSU LIMITED
发明人: Takemae, Yoshihiro , Sato, Kimiaki , Nozaki, Shigeki , Miyahara, Hatsuo , Nakano, Masao , Kodama, Nobumi , Yanagisawa, Makoto Fujitsu dai 2 Nakahara-ryo,1287 , Takada, Yasuhiro , Momozono, Satoshi
IPC分类号: G11C29/00
CPC分类号: G11C29/46
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公开(公告)号:EP0255362A2
公开(公告)日:1988-02-03
申请号:EP87306708.6
申请日:1987-07-29
申请人: FUJITSU LIMITED
发明人: Takemae, Yoshihiro , Sato, Kimiaki , Nozaki, Shigeki , Miyahara, Hatsuo , Nakano, Masao , Kodama, Nobumi , Yanagisawa, Makoto Fujitsu dai 2 Nakahara-ryo,1287 , Takada, Yasuhiro , Momozono, Satoshi
IPC分类号: G11C29/00
CPC分类号: G11C29/46
摘要: A semiconductor integrated circuit having first and second power supply lines (Vcc,Vss) for receiving a power supply voltage, an external input terminal (84) for receiving an input signal, and a high voltage detection circuit (6) for detecting at the external input terminal a high voltage higher than a predetermined voltage which is higher than the power supply voltage. The high voltage detection circuit (6) comprises an input circuit (61) connected to the external input terminal (84) for generating a detection voltage; a reference voltage generating circuit (Q31-Q34) for generating a reference voltage; and a differential voltage amplifier (62) connected to receive the detection voltage and the reference voltage for amplifying the difference between the detection voltage and the reference voltage, to thereby determine whether the high voltage is applied. The input circuit comprises a level shift element (Q21-Q25) connected to the external input terminal (84) for providing the detection voltage; an impedance element (Q26-Q27) connected between the level shift element and the second power supply line (Vss); and a leak current compensating element (Q28,Q29) connected between the first power supply line (Vcc) and the level shift element for allowing a current to flow from the first power supply line through the leak current compensating element and the impedance element to the second power supply line when the high voltage is not applied to the external input terminal.
摘要翻译: 一种具有用于接收电源电压的第一和第二电源线(Vcc,Vss),用于接收输入信号的外部输入端子(84)和用于在外部检测的高电压检测电路(6)的半导体集成电路 输入端子高于高于电源电压的预定电压的高电压。 高电压检测电路(6)包括连接到外部输入端子(84)的用于产生检测电压的输入电路(61) 用于产生参考电压的参考电压产生电路(Q31-Q34); 以及差分电压放大器(62),连接以接收检测电压和参考电压,用于放大检测电压和参考电压之间的差值,从而确定是否施加高电压。 输入电路包括连接到外部输入端子(84)的电平移位元件(Q21-Q25),用于提供检测电压; 连接在电平移动元件和第二电源线(Vss)之间的阻抗元件(Q26-Q27); 以及连接在第一电源线(Vcc)和电平移动元件之间的漏电流补偿元件(Q28,Q29),用于允许电流从第一电源线通过漏电流补偿元件流过,并且阻抗元件 当外部输入端子不施加高电压时,第二条电源线。
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公开(公告)号:EP0240156A3
公开(公告)日:1990-03-21
申请号:EP87301749.5
申请日:1987-02-27
申请人: FUJITSU LIMITED
发明人: Takemae, Yoshihiro , Tatematsu, Takeo , Sato, Kimiaki , Horii, Takashi , Kodama, Nobumi , Yanagisawa, Makoto , Takada, Yasuhiro
摘要: A one-transistor one-capacitor type semi-conductor memory device having a detection circuit (TC) for detecting the electric potential of a word line (WL), to determine an appropriate timing for driving a sense amplifier (SA), thereby improving the speed of memory operations.
摘要翻译: 一种具有用于检测字线(WL)的电位的检测电路(TC)的单晶体管单电容器型半导体存储器件,以确定用于驱动读出放大器(SA)的适当时序,由此改善 记忆操作的速度。
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