公开(公告)号：EP1411601A4

公开(公告)日：2005-01-19

申请号：EP02736213

申请日：2002-07-02

申请人： FURUKAWA ELECTRIC CO LTD

发明人： KIMURA TOSHIO ,  NAKAE MASASHI ,  TSUKIJI NAOKI ,  YOSHIDA JUNJI ,  OHKI YUTAKA ,  AIKIYO TAKESHI

IPC分类号： G02B6/34 ,  G02B6/42 ,  H01S3/094 ,  H01S3/0941 ,  H01S3/30 ,  H01S5/022 ,  H01S5/024 ,  H01S5/10 ,  H01S5/125 ,  H01S5/34 ,  H01S5/40 ,  H01S5/00 ,  G02B27/10

CPC分类号： H01S5/4031 ,  B82Y20/00 ,  G02B6/4206 ,  G02B6/4218 ,  H01S3/094003 ,  H01S3/094073 ,  H01S3/09415 ,  H01S3/302 ,  H01S5/005 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/02415 ,  H01S5/02438 ,  H01S5/1039 ,  H01S5/1085 ,  H01S5/1096 ,  H01S5/125 ,  H01S5/22 ,  H01S5/227 ,  H01S5/3409 ,  H01S5/4012 ,  H01S5/4087 ,  H01S2301/03

摘要： A semiconductor laser module which makes an optical fiber (8) couple two laser beams emitted from a semiconductor device (2) by orthogonal polarization combination. The optical fiber (8) is a polarization reserve fiber and so positioned that two orthogonal main axes of the polarization reserve fiber and the two beams may make angles of about 45∘in their respective polarization directions.

摘要翻译： 一种半导体激光模块，其使光纤（8）通过正交偏振组合耦合从半导体器件（2）发射的两束激光束。 光纤是偏振光备用光纤，其位置是使偏振光纤与两个光束的两个正交的主轴可以在它们各自的偏振方向上形成大约45°的角度。

公开(公告)号：EP1418653A4

公开(公告)日：2005-05-04

申请号：EP02736049

申请日：2002-06-11

申请人： FURUKAWA ELECTRIC CO LTD

发明人： YOSHIDA JUNJI ,  TSUKIJI NAOKI ,  KIMURA TOSHIO ,  NAKAE MASASHI ,  AIKIYO TAKESHI

IPC分类号： G02B6/34 ,  G02B6/42 ,  H01S3/094 ,  H01S3/30 ,  H01S5/00 ,  H01S5/022 ,  H01S5/024 ,  H01S5/10 ,  H01S5/125 ,  H01S5/14 ,  H01S5/32 ,  H01S5/34 ,  H01S5/40

CPC分类号： H01S5/4031 ,  B82Y20/00 ,  G02B6/4206 ,  G02B6/4218 ,  H01S3/094003 ,  H01S3/094073 ,  H01S3/302 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/02415 ,  H01S5/02438 ,  H01S5/028 ,  H01S5/0683 ,  H01S5/1039 ,  H01S5/1096 ,  H01S5/12 ,  H01S5/125 ,  H01S5/227 ,  H01S5/3215 ,  H01S5/3409 ,  H01S5/4012 ,  H01S5/4062 ,  H01S5/4087

摘要： A semiconductor laser device having two active layer stripe structures. A cross section of one of the stripe structures includes an n-InP substrate (1), n-InP clad layer (2), a lower GRIN-SCH layer (3b), an active layer (4b), an upper GRIN-SCH layer (5b), a p-InP clad layer (6), and a p-InGaAsP contact layer (7) formed in this order. Moreover, a high reflection film (12) is arranged at the reflection side end surface and a low reflection film (13) is arranged at the emission side end surface. On the p-InGaAsP contact layer (7), a p-side electrode (8b) is arranged partly and a non-current poured region (14) is formed at the remaining area.