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公开(公告)号：EP1743055A1
公开(公告)日：2007-01-17
申请号：EP04727772.8
申请日：2004-04-15
发明人： VALLÊRA, António , SERRA, João , MAIA ALVES, Jorge , BRITO, Miguel , GAMBOA, Roberto , HENRIQUES, João
CPC分类号： C30B29/06 , C30B15/34 , Y10T117/10 , Y10T117/102 , Y10T117/1044 , Y10T117/1076 , Y10T117/108
摘要： The present invention provides a method for the continuous production of semiconductor ribbons by growth from a linear molten zone. The creation of the molten zone is achieved by application of an electric current, direct or alternating, parallel to the surface of the ribbon and perpendicular to the direction of growth, and intense enough to melt the said material, preferably using electrodes of the said material. The molten zone is fed by transference of the material, in the liquid state, from one or more reservoirs, where melting of the feedstock occurs. Preferably, the said electrodes and the said reservoir(s) are only constituted by the said material, thus avoiding contamination by foreign materials. The present invention is applicable, for example, in the industry of silicon ribbons production for photovoltaic application.
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2.发明授权METHOD AND APPARATUS FOR THE GROWTH OF SEMICONDUCTOR, PARTICULARLY SILICON, RIBBONS 有权方法和装置用于牵引半导体，特别是硅，磁带
公开(公告)号：EP1743055B1
公开(公告)日：2010-12-29
申请号：EP04727772.8
申请日：2004-04-15
发明人： VALLÊRA, António , SERRA, João , MAIA ALVES, Jorge , BRITO, Miguel , GAMBOA, Roberto , HENRIQUES, João
CPC分类号： C30B29/06 , C30B15/34 , Y10T117/10 , Y10T117/102 , Y10T117/1044 , Y10T117/1076 , Y10T117/108
摘要： The present invention provides a method for the continuous production of semiconductor ribbons by growth from a linear molten zone. The creation of the molten zone is achieved by application of an electric current, direct or alternating, parallel to the surface of the ribbon and perpendicular to the direction of growth, and intense enough to melt the said material, preferably using electrodes of the said material. The molten zone is fed by transference of the material, in the liquid state, from one or more reservoirs, where melting of the feedstock occurs. Preferably, the said electrodes and the said reservoir(s) are only constituted by the said material, thus avoiding contamination by foreign materials. The present invention is applicable, for example, in the industry of silicon ribbons production for photovoltaic application.
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