公开(公告)号：EP3011599A1

公开(公告)日：2016-04-27

申请号：EP14813176.6

申请日：2014-06-20

申请人： First Solar, Inc

发明人： DUGGAL, Anil, Raj ,  SHIANG, Joseph, John ,  HUBER, William, Hullinger ,  HALVERSON, Adam, Fraser

IPC分类号： H01L31/0352

CPC分类号： H01L31/0272 ,  H01L31/02966 ,  H01L31/065 ,  H01L31/073 ,  H01L31/1832 ,  Y02E10/543

摘要： A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer includes cadmium, tellurium, and selenium. A semiconductor layer is further disposed on the absorber layer, wherein a valence band offset between the semiconductor layer and the absorber layer is less than about 1.3 electron Volts, and a band gap of the semiconductor layer is in a range from about 1.2 electron Volts to about 3.5 electron Volts.

摘要翻译： 介绍了光伏器件。 光伏器件包括层叠; 并且在层叠体上设置吸收层。 吸收层包括镉，碲和硒。 半导体层还设置在吸收层上，其中半导体层和吸收层之间的价带偏移小于约1.3电子伏特，并且半导体层的带隙在约1.2电子伏特至 约3.5电子伏特。