摘要:
A radiation detection system is provided. The radiation detection system includes a radiation detector 52. The radiation detector 50 includes a semiconductor layer 52 having a first surface 54 and a second surface 56 opposite the first surface 54, a monolithic cathode 60 disposed on the first surface 54, and multiple pixelated anode strip-electrodes 62 disposed on the second surface 56 in a coplanar arrangement. The multiple pixelated anode strip-electrodes 62 include a first set of pixelated anode strip-electrodes 64 disposed along a first direction and a second set of pixelated anode strip-electrodes 66 disposed along a second direction orthogonal to the first direction. Each pixelated anode strip-electrode of the first set of pixelated anode strip-electrodes 64 includes a first respective multiple segments disposed along the first direction. Each pixelated anode strip-electrode of the second set of pixelated anode strip-electrodes 66 includes a second respective multiple segments disposed along the second direction.
摘要:
A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.
摘要:
A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer comprises selenium, wherein an atomic concentration of selenium varies across a thickness of the absorber layer. The photovoltaic device is substantially free of a cadmium sulfide layer.
摘要:
A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer includes selenium, and an atomic concentration of selenium varies non-linearly across a thickness of the absorber layer. A method of making a photovoltaic device is also presented.
摘要:
A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer comprises selenium, wherein an atomic concentration of selenium varies across a thickness of the absorber layer. The photovoltaic device is substantially free of a cadmium sulfide layer.