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11 条记录 (耗时 0.01 秒)

    METHOD OF DECREASING CRACK PROPAGATION DAMAGE IN A SOLAR CELL DEVICE
    2.
    发明公开
    METHOD OF DECREASING CRACK PROPAGATION DAMAGE IN A SOLAR CELL DEVICE 审中-公开
    降低太阳能电池装置中裂纹扩展损伤的方法

    公开(公告)号：EP3308404A1

    公开(公告)日：2018-04-18

    申请号：EP16733184.2

    申请日：2016-06-08

    申请人： Flisom AG

    发明人： MEEDER, Alexander ,  ZILTENER, Roger ,  NETTER, Thomas

    IPC分类号： H01L31/0392 ,  H01L31/046

    摘要： The present disclosure generally relates to a photovoltaic device, and method of forming the same that has an improved manufacturing device yield and desirable electrical properties based one or more patterning techniques performed during the photovoltaic device manufacturing process. The patterning techniques include forming one or more scribed regions in a formed or partially formed photovoltaic device to inhibit the migration of cracks or defects to undesirable regions of the formed photovoltaic device and/or reduce or relieve an amount of stress found in the layers used to form the photovoltaic device.

    METHOD FOR THIN-FILM VIA SEGMENTS IN PHOTOVOLTAIC DEVICE
    4.
    发明公开
    METHOD FOR THIN-FILM VIA SEGMENTS IN PHOTOVOLTAIC DEVICE 有权
    一种用于在光伏组件薄薄膜部分

    公开(公告)号：EP3100307A1

    公开(公告)日：2016-12-07

    申请号：EP15701852.4

    申请日：2015-01-26

    申请人： Flisom AG

    发明人： ZILTENER, Roger ,  NETTER, Thomas

    IPC分类号： H01L31/0463 ,  H01L31/0749

    CPC分类号： H01L31/0463 ,  H01L31/0749 ,  H01L31/18 ,  Y02E10/541 ,  Y02P70/521

    摘要： A method for vias and monolithic interconnects in thin-film optoelectronic devices (100, 200) wherein at least one line segment via hole (163, 165, 165′, 167) is formed by laser drilling and passes through front-contact layers (150, 152, 154, 156, 158) and semiconductive active layer (130), and wherein laser drilling causes forming a CIGS-type wall (132, 134, 136, 138) of electrically conductive permanently metalized copper-rich CIGS-type alloy at the inner surface (135) of the via hole, thereby forming a conductive path between at least a portion of front-contact and a portion of back-contact layers (120, 124, 126, 128, 129), forming a bump-shaped raised portion (155) at the surface of the front-contact layer, forming a raised portion (125, 127, 127′) of the back-contact layer, and optionally forming a raised portion of copper-rich CIGS-type alloy (155′) covering a portion of the front-contact layer (150). A thin-film CIGS device comprises at least one line segment via hole obtainable by the method.

    THIN-FILM DEVICE WITH ELECTRICAL ISOLATION LAYER
    5.
    发明公开
    THIN-FILM DEVICE WITH ELECTRICAL ISOLATION LAYER 审中-公开
    具有电隔离层的薄膜器件

    公开(公告)号：EP3281233A1

    公开(公告)日：2018-02-14

    申请号：EP16720166.4

    申请日：2016-04-05

    申请人： Flisom AG

    发明人： NETTER, Thomas ,  OLDRIDGE, John ,  KERN, Roland

    IPC分类号： H01L31/048 ,  H01L31/049 ,  H01L31/18

    CPC分类号： H01L31/049 ,  H01L31/0465 ,  H01L31/048 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

    摘要： A photovoltaic apparatus is provided including a front sheet, a back sheet, and a photovoltaic device disposed between the front sheet and the back sheet. The photovoltaic device includes a first photovoltaic cell and a second photovoltaic cell separated in a first direction. The photovoltaic device further includes a first serial interconnect having a length that extends in a second direction. The first serial interconnect is disposed between the first photovoltaic cell from the second photovoltaic cell. The first photovoltaic cell and the second photovoltaic cell are electrically connected in series by the first interconnect. The photovoltaic apparatus further includes a spacing layer including a first roving disposed between the first interconnect and the back sheet. The first roving has a length that is aligned with the length of first serial interconnect.

    THIN-FILM PHOTOVOLTAIC DEVICE WITH WAVY MONOLITHIC INTERCONNECTS
    6.
    发明公开
    THIN-FILM PHOTOVOLTAIC DEVICE WITH WAVY MONOLITHIC INTERCONNECTS 审中-公开
    DENNNSCHICHT-FOTOVOLTAIKMODUL MIT GEWELLTEN MONOLITHISCHEN VERBINDUNGEN

    公开(公告)号：EP2834847A2

    公开(公告)日：2015-02-11

    申请号：EP13722090.1

    申请日：2013-03-27

    申请人： Flisom AG

    发明人： PFEIFFER, Reto ,  ZILTENER, Roger ,  NETTER, Thomas

    IPC分类号： H01L27/142 ,  H01L31/0352 ,  H01L31/042

    CPC分类号： H01L31/0516 ,  G06F17/5077 ,  H01L31/0201 ,  H01L31/022433 ,  H01L31/035272 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0465 ,  H01L31/0508 ,  Y02E10/50

    摘要： A thin-film optoelectronic module device (100) and design method comprising at least three monolithically-interconnected cells (104, 106, 108) where at least one monolithically-interconnecting line (250) depicts a spatial periodic or quasi-periodic wave and wherein the optoelectronic surface of said thin-film optoelectronic module device (100) presents at least one set of at least three zones (210, 220, 230) having curves of substantially parallel monolithic interconnect lines. Border zones (210, 230) have a lower front-contact sheet resistance than that of internal zone (220). Said curves of substantially parallel interconnecting lines may comprise peaks of triangular or rounded shape, additional spatial periods that are smaller than a baseline period, and mappings from one curve to the adjacent curve such as in the case of non-rectangular module devices (100). The device (100) and design method are advantageous to reduce costs and materials to manufacture thin-film optoelectronic module devices (100) while increasing production yield, reliability, aesthetic appearance, and range of applications.

    摘要翻译： 一种薄膜光电子模块器件（100）和包括至少三个单片互连的单元（104,106,108）的设计方法，其中至少一个单片互连线（250）描绘空间周期性或准周期波，并且其中 所述薄膜光电子模块装置（100）的光电子表面呈现具有基本上平行的单片互连线的曲线的至少一组至少三个区域（210,220,230）。 边界区域（210,230）的前接触片电阻率低于内部区域（220）的电阻率。 基本上平行的互连线的所述曲线可以包括三角形或圆形形状的峰值，小于基线周期的附加空间周期以及从一个曲线到相邻曲线的映射，例如在非矩形模块装置（100）的情况下， 。 设备（100）和设计方法有利于降低制造薄膜光电子模块设备（100）的成本和材料，同时提高产量，可靠性，美学外观和应用范围。