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公开(公告)号：EP3823038A1
公开(公告)日：2021-05-19
申请号：EP19833736.2
申请日：2019-07-11
申请人： Flosfia Inc.
IPC分类号： H01L29/786 , H01L21/336 , H01L21/338 , H01L21/365 , H01L21/368 , H01L29/12 , H01L29/24 , H01L29/47 , H01L29/78 , H01L29/812 , H01L29/872
摘要： A semiconductor device including at least one inversion channel region includes an oxide semiconductor film containing a crystal that has a corundum structure at the inversion channel region.
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公开(公告)号：EP3712954A1
公开(公告)日：2020-09-23
申请号：EP18878569.5
申请日：2018-11-15
申请人： Flosfia Inc.
IPC分类号： H01L29/12 , H01L21/28 , H01L21/329 , H01L21/336 , H01L21/337 , H01L21/338 , H01L29/41 , H01L29/47 , H01L29/739 , H01L29/78 , H01L29/808 , H01L29/812 , H01L29/872
摘要： The disclosure provides a semiconductor apparatus capable of keeping a semiconductor characteristics and realizing excellent semiconductor properties even when using an n type semiconductor (gallium oxide, for example) having a low loss at a high voltage and having much higher dielectric breakdown electric field strength than SiC. A semiconductor apparatus includes a gate electrode and a channel layer formed of a channel directly or through other layers on a side wall of the gate electrode, and wherein a portion of or whole the channel layer may be a p type oxide semiconductor (iridium oxide, for example).
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公开(公告)号：EP4068389A1
公开(公告)日：2022-10-05
申请号：EP20894570.9
申请日：2020-11-20
申请人： Flosfia Inc.
发明人： SUGIMOTO Masahiro , HIGUCHI Yasushi
IPC分类号： H01L29/786 , C23C16/40 , C30B29/16 , H01L21/365 , H01L21/368 , H01L29/12 , H01L29/78
摘要： A semiconductor device including at least a crystalline oxide semiconductor layer, which has a band gap of 3 eV or more and a field-effect mobility of 30 cm 2 /V·s or higher.
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公开(公告)号：EP3823044A1
公开(公告)日：2021-05-19
申请号：EP19835132.2
申请日：2019-07-10
申请人： Flosfia Inc.
IPC分类号： H01L29/872 , H01L21/20 , H01L21/329 , H01L21/365 , H01L21/368 , H01L29/06 , H01L29/24 , H01L29/41 , H01L29/47 , H01L29/861 , H01L29/868 , H02M3/28
摘要： A semiconductor device with enhanced semiconductor characteristics that is useful for power devices. A semiconductor device, including: an n-type semiconductor layer; one or more p-type semiconductors; an electrode, the one or more p-type semiconductors that are provided between the n-type semiconductor layer and the electrode, and at least a part of the one or more p-type semiconductors is protruded in the electrode.
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公开(公告)号：EP3823039A1
公开(公告)日：2021-05-19
申请号：EP19834993.8
申请日：2019-07-11
申请人： Flosfia Inc.
IPC分类号： H01L29/786 , H01L21/336 , H01L21/338 , H01L21/365 , H01L21/368 , H01L29/12 , H01L29/24 , H01L29/47 , H01L29/78 , H01L29/812 , H01L29/872
摘要： A semiconductor device including at least an inversion channel region includes an oxide semiconductor film containing a crystal that contains at least gallium oxide at the inversion channel region.
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公开(公告)号：EP3712959A1
公开(公告)日：2020-09-23
申请号：EP18878104.1
申请日：2018-11-15
申请人： Flosfia Inc.
IPC分类号： H01L29/78 , H01L21/28 , H01L21/329 , H01L21/336 , H01L21/337 , H01L21/338 , H01L29/12 , H01L29/41 , H01L29/47 , H01L29/739 , H01L29/808 , H01L29/812 , H01L29/872
摘要： A semiconductor apparatus capable of reducing the leakage current in the reverse direction, and keeping characteristics thereof, even when using n type semiconductor (gallium oxide, for example) or the like having a low-loss at a high voltage and having much higher dielectric breakdown electric field strength than SiC is provided. A semiconductor apparatus includes a crystalline oxide semiconductor having a corundum structure as a main component, and an electric field shield layer and a gate electrode that are respectively laminated directly or through other layers on the n type semiconductor layer, wherein the electric field shield layer includes a p type oxide semiconductor, and is embedded in the n type semiconductor layer deeper than the gate electrode.
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