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    SOLARZELLE
    5.
    发明公开
    SOLARZELLE 审中-公开

    公开(公告)号：EP2481092A2

    公开(公告)日：2012-08-01

    申请号：EP10754287.0

    申请日：2010-09-13

    申请人： Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. ,  Albert-Ludwigs-Universität Freiburg

    发明人： HERMLE, Martin ,  HAUSER, Hubert ,  BERGER Pauline ,  BLÄSI, Benedikt ,  PETERS, Marius ,  GOLDSCHMIDT, Jan, Christoph

    IPC分类号： H01L31/0236

    CPC分类号： H01L31/0236 ,  H01L31/0547 ,  H01L31/056 ,  H01L31/075 ,  Y02E10/52 ,  Y02E10/548

    摘要： The invention relates to a solar cell, comprising a silicon layer which has a dopant of a first dopant type, a front designed for the coupling in of light, and a rear, the silicon layer being a doped base layer, at least one textured layer and a metal layer being arranged on the rear of the silicon layer, optionally on additional intermediate layers, and the textured layer comprising a rear texture in at least a section thereof which rear texture is designed as an optical diffraction structure. It is essential that at least one textured intermediate structure (3, 23, 33) is arranged between the textured layer (2, 22, 32) and the metal layer (4, 24, 34), the metal layer (4, 24, 34) being connected to the textured layer (2, 22, 32) and/or to the base layer (1, 21, 31) in an electrically conducting manner. The textured intermediate structure (3, 23, 33) is substantially transparent at least in the wavelength range of 800 nm to 1100 nm and has a refractive index
    n smaller than the refractive index of the textured layer in at least this wavelength range. The refractive index of all layers arranged between the base layer (1, 21, 31) and the textured intermediate layer (3, 23, 33) deviates by not more than 30% relative to the refractive index of silicon and the layer which is arranged directly on the rear of the base layer (1, 21, 31) is a passivation layer which passivates the surface with respect to the recombination of minority charge carriers.

    摘要翻译： 太阳能电池技术领域本发明涉及一种太阳能电池，该太阳能电池包括具有第一掺杂剂类型的掺杂剂的硅层，设计用于光耦合的正面和背面，硅层是掺杂基层，至少一个纹理层 以及金属层，所述金属层布置在所述硅层的后面，可选地位于附加的中间层上，并且所述纹理层在其至少一部分中包括后部纹理，所述后部纹理被设计为光学衍射结构。 重要的是，在纹理层（2,22,32）和金属层（4,24,34）之间布置至少一个纹理化的中间结构（3,23,33），金属层（4,24,34） 34）以导电方式连接到所述织构层（2,22,32）和/或所述基底层（1,21,31）。 纹理化的中间结构（3,23,33）至少在800nm至1100nm的波长范围内基本上是透明的，并且在至少该波长范围内具有小于纹理层的折射率的折射率n。 布置在基层（1,21,31）和纹理化中间层（3,23,33）之间的所有层的折射率相对于硅的折射率偏差不超过30％，并且布置的层 直接在基极层（1,21,31）的后面是钝化层，钝化层相对于少数电荷载流子的复合钝化表面。