公开(公告)号：EP3916806A1

公开(公告)日：2021-12-01

申请号：EP20869538.7

申请日：2020-08-31

申请人： Fuji Electric Co., Ltd.

发明人： SATO Shigeki ,  ARAKI Ryu ,  MIYATA Hiroshi ,  YOSHIDA Soichi

IPC分类号： H01L29/78 ,  H01L21/329 ,  H01L21/8234 ,  H01L27/06 ,  H01L29/739 ,  H01L29/866

摘要： A semiconductor device including: a semiconductor substrate; a temperature sensing unit provided on a front surface of the semiconductor substrate; an anode pad and a cathode pad electrically connected with the temperature sensing unit; a front surface electrode being set to a predetermined reference potential; and a bidirectional diode unit electrically connected in a serial bidirectional way between the cathode pad and the front surface electrode is provided. The bidirectional diode unit may be arranged between the anode pad and the cathode pad on the front surface.