摘要:
Providing a practical ultrashort pulse laser light source capable of recording information on two-photon absorption recording media at high-speed and stably. Providing a soliton mode-locked solid-state laser (10) that includes a resonator, a solid-state laser medium (16), a negative group velocity dispersion compensator (19) for compensating for group velocity dispersion within the resonator, and an excitation optical system (13) that outputs excitation light (Lo) for exciting the solid-state laser medium (16), and oscillates soliton pulse laser light (L) with a repetition frequency of not less than 1 GHz, an intensity modulator (30) that includes a waveguide electrooptic modulator (31) for modulating intensity of the soliton pulse laser light (L) and a driver (32) for applying a voltage to the waveguide electrooptic modulator (31) according to desired information, and a nonlinear optical element (40) for converting the intensity-modulated soliton pulse laser light (Lm) to a second harmonic wave.
摘要:
In a mode-locked laser-diode-excited laser apparatus: a solid-state laser medium (15) is arranged at a distance of at most twice the Rayleigh range from a saturable absorbing mirror with a depth of absorbing modulation of at least 0.4%; the total intracavity dispersion is smaller than zero and makes oscillating light have such a pulse bandwidth that the saturable absorbing mirror (16) can suppress a background pulses other than soliton pulses repeated with a fundamental repetition period; and an output mirror is a negative-dispersion mirror (5) in which high-index layers and low-index layers, having optical thicknesses randomly varying in the range of one-eighth to half of the predetermined wavelength, are alternately laminated, and the negative-dispersion mirror causes a mirror dispersion of -1000 fsec 2 to -100 fsec 2 and realizes a reflectance of 97% to 99.5%.
摘要:
There is provided a solid-state laser device (10) including: a resonator; a solid-state laser medium (18) disposed in the resonator; an excitation section that irradiates an excitation beam into the solid-state laser medium (18); a mode selector (26) that controls transverse modes of oscillating light in the resonator; and a movement section (28) that moves the mode selector (26) along the resonator optical axis direction (Z). The laser may be mode-locked with a SESAM (12) and the laser medium may be Yb: KYW. The transverse mode selector may be a knife edge (26) which is translated with the help of a holder (28) resulting in a single transverse mode emission of the laser.
摘要:
A negative dispersion mirror (5) can generate large negative group-velocity dispersion and it can be used as an output mirror of a solid-state laser apparatus. The mirror (5) includes a substrate (6) and a dielectric multilayer coating structure (7) formed on the substrate (6). The multilayer coating structure (7) includes two mirror-function layer portions (ML 1 , ML 2 ), each formed by a plurality of layers deposited one on another, and a cavity layer (C) that is arranged between the two mirror-function layer portions (ML 1 , ML 2 ), and which causes light (L) having a predetermined wavelength to resonate between the two mirror-function layer portions (ML 1 , ML 2 ). Further, a dispersion value with respect to the light (L) having the predetermined wavelength is in the range of -600fs 2 to -3000fs 2 and a reflectance with respect to the light (L) having the predetermined wavelength is in the range of 97% to 99.5%.
摘要:
There is provided a mode-locked laser device (10) including: a resonator (34); a solid-state laser medium (26) that is disposed in the resonator (34) and outputs oscillation light in accordance with the incidence of excitation light; a saturable absorber (28) that is disposed in the resonator (34) and induces soliton mode-locking; a group velocity dispersion correction component (30) that is disposed in the resonator (34) and controls group velocity dispersion in the resonator (34); and an excitation portion (32) that causes excitation light to be incident at the solid-state laser medium (26), wherein a resonator length of the resonator is at least a resonator length with which soliton mode-locking is inducible and is less than a resonator length with which non-soliton mode-locking is inducible.
摘要:
There is provided a mode locked laser device including: a cavity, the cavity having a semiconductor saturable absorbing mirror (14) and a negative dispersion mirror (20) that controls group velocity dispersion within the cavity, disposed in a straight line; a solid-state laser medium (16), disposed in the cavity and outputting oscillating light due to excitation light being incident thereon; an excitation unit that causes the excitation light to be incident on the solid-state laser medium; and a cavity holder (34), the light incident face of the semiconductor saturable absorbing mirror (14) attached to one end of the cavity holder (34), the negative dispersion mirror (20) attached to the other end of the cavity holder (34), and the cavity holder integrally supporting the semiconductor saturable absorbing mirror and the negative dispersion mirror. SESAM (14) and solid-state laser medium (16) are temperature controlled with a Peltier cooler (22). The laser emits at high repetition rates soliton pulses stably.
摘要:
In order to stably generate high-power pulsed laser light by a small-sized apparatus constructed at low cost, a mode-locked solid-state laser apparatus includes: a resonator having a linear form; a solid-state laser medium (13) arranged in the resonator; a saturable absorber (12) which is arranged at one end of the resonator or inside the resonator for inducing mode locking; an excitation optical system (18) which injects excitation light (L 0 ) into the solid-state laser medium; and a cavity dumping mechanism (20, 20') which extracts from the resonator pulsed light (L) oscillating in the resonator. The cavity dumping mechanism includes an electro-optical modulator (21) which changes the direction of polarization of the pulsed light, and a deflector (22) which has a function of deflecting the pulsed light to a direction intersecting the optical axis of the resonator after the pulsed light undergoes the change by the electro-optical modulator.
摘要:
In order to stably generate high-power pulsed laser light by a small-sized apparatus constructed at low cost, a mode-locked solid-state laser apparatus includes: a resonator having a linear form; a solid-state laser medium (13) arranged in the resonator; a saturable absorber (12) which is arranged at one end of the resonator or inside the resonator for inducing mode locking; an excitation optical system (18) which injects excitation light (L 0 ) into the solid-state laser medium; and a cavity dumping mechanism (20, 20') which extracts from the resonator pulsed light (L) oscillating in the resonator. The cavity dumping mechanism includes an electro-optical modulator (21) which changes the direction of polarization of the pulsed light, and a deflector (22) which has a function of deflecting the pulsed light to a direction intersecting the optical axis of the resonator after the pulsed light undergoes the change by the electro-optical modulator.
摘要:
In a mode-locked laser-diode-excited laser apparatus: a solid-state laser medium (15) is arranged at a distance of at most twice the Rayleigh range from a saturable absorbing mirror with a depth of absorbing modulation of at least 0.4%; the total intracavity dispersion is smaller than zero and makes oscillating light have such a pulse bandwidth that the saturable absorbing mirror (16) can suppress a background pulses other than soliton pulses repeated with a fundamental repetition period, and the magnitude of the total intracavity dispersion has a predetermined relationship with a pulse width of the oscillating light; and an output mirror is a negative-dispersion mirror (5) being constituted by three or more multilayer mirrors and cavity layers arranged at predetermined intervals between the three or more multilayer mirrors, and causing a mirror dispersion of -3000 fsec 2 to -600 fsec 2 and realizes a reflectance of 97% to 99.5%.