公开(公告)号：EP1001326B1

公开(公告)日：2005-08-31

申请号：EP99922553.5

申请日：1999-05-27

申请人： FUJIKIN Inc. ,  TOKYO ELECTRON LIMITED ,  OHMI, Tadahiro

发明人： OHMI, Tadahiro ,  KAGATSUME, Satoshi ,  IKEDA, Nobukazu ,  NISHINO, Kouji ,  YOSHIKAWA, Kazuhiro ,  IDETA, Eiji ,  DOHI, Ryousuke ,  UNO, Tomio ,  YAMAJI, Michio

IPC分类号： G05D7/06

CPC分类号： G05D7/0635 ,  Y10T137/7759 ,  Y10T137/7761

摘要： A gas supply equipment comprising a gas control valve (2), an orifice accommodating valve (9) provided downstream of the control valve (2), a pressure detector (3) provided between the control valve (2) and the orifice accommodating valve (9), an orifice (5) provided downstream of the valve mechanism of the orifice accommodating (9) and an arithmetic and control unit which calculates a flow rate as Qc = KP1 (K; constant) from a detected pressure P1 by the pressure detector (3) and outputs to the drive unit of the control valve (2) the difference between a flow rate instruction signal Qs and a calculated flow rate Qc as a control signal Qy.

公开(公告)号：EP1001326A1

公开(公告)日：2000-05-17

申请号：EP99922553.5

申请日：1999-05-27

申请人： Fujikin Inc. ,  TOKYO ELECTRON LIMITED ,  OHMI, Tadahiro

发明人： OHMI, Tadahiro ,  KAGATSUME, Satoshi ,  IKEDA, Nobukazu ,  NISHINO, Kouji ,  YOSHIKAWA, Kazuhiro ,  IDETA, Eiji ,  DOHI, Ryousuke ,  UNO, Tomio ,  YAMAJI, Michio

IPC分类号： G05D7/06

CPC分类号： G05D7/0635 ,  Y10T137/7759 ,  Y10T137/7761

摘要： An improved and reduced-size low-cost gas supply system equipped with a pressure-type flow control used as in semiconductor manufacturing facilities. Transient flow rate characteristics are improved to prevent the gas from overshooting when the gas supply is started, raising the flow rate control accuracy and reliability of facilities. That eliminates the quality ununiformity of products or semiconductors and raises the production efficiency.
To illustrate, the gas supply system equipped with a pressure-type flow control unit is so configured that with the pressure on the upstream side of the orifice held about twice or more higher than the downstream pressure, the gas flow rate is controlled to supply the gas to a gas-using process through an orifice-accompanying valve, the gas supply system comprising a control valve to receive gas from the gas supply source, an orifice-accompanying valve provided on the downstream side of the control valve, a pressure detector provided between the control valve and the orifice-accompanying valve, an orifice provided on the downstream side of the valve mechanism of the orifice-accompanying valve and a calculation control unit where on the basis of the pressure P1 detected by the pressure detector, the flow rate Qc is calculated with an equation Qc = KP1 (K: constant) and the difference between the flow-rate specifying signal Qs and the calculated flow rate Qc is then input as control signal Qy in the drive for the control valve, thereby regulating the opening of the control valve for adjusting the pressure P1 so that the flow rate of the gas to supply can be controlled.

摘要翻译： 一种改进且尺寸较小的低成本气体供应系统，配备有与半导体制造设备一样使用的压力型流量控制。 提高瞬态流量特性，防止气体开始时气体过冲，提高流量控制精度和设施可靠性。 这消除了产品或半导体的质量不均匀性并提高了生产效率。 为了说明，配置有压力型流量控制单元的气体供给系统被构造成使得在孔口的上游侧的压力保持为比下游压力高大约两倍或更多的气体，气体流量被控制以供应 气体通过孔口相关阀进入气体使用过程，所述气体供应系统包括用于接收来自气体供应源的气体的控制阀，设置在控制阀的下游侧的孔附件阀，设置有压力检测器 在控制阀和节流阀相关阀之间，设置在节流阀相关阀的阀机构的下游侧的孔口和计算控制单元，其中基于由压力检测器检测到的压力P1，流量 用公式Qc = KP1（K：常数）计算Qc，然后输入流量指定信号Qs和计算流量Qc之间的差作为控制符号 在控制阀的驱动中，由此调节用于调节压力P1的控制阀的打开，从而可以控制供给气体的流量。