Method of fabricating a resistive switching element including nanogap electrodes
    3.
    发明公开
    Method of fabricating a resistive switching element including nanogap electrodes 有权
    Nelsonücken-Metallelektroden的Herstellungsverfahrenfürein Widerstandsschaltelement

    公开(公告)号:EP2239796A2

    公开(公告)日:2010-10-13

    申请号:EP10159482.8

    申请日:2010-04-09

    IPC分类号: H01L45/00

    摘要: Disclosed is a fabrication method of an element (1) with nanogap electrodes including a first electrode (20), a second electrode (60) provided above the first electrode, and a gap (70) provided between the first electrode and the second electrode, the gap being in an order of nanometer to allow resistive state to be switched by applying a predetermined voltage between the first electrode and the second electrode, the method comprising: forming the first electrode (20); forming a spacer (30) on an upper surface of the first electrode; forming the second electrode (60) in contact with an upper surface of the spacer; and removing the spacer (30) to form the gap (70).

    摘要翻译: 公开了一种具有纳米隙电极的元件(1)的制造方法,所述纳米间隙电极包括设置在第一电极上方的第一电极(20),第二电极(60)和设置在第一电极和第二电极之间的间隙(70) 所述间隙为纳米级,以通过在所述第一电极和所述第二电极之间施加预定电压来允许电阻状态切换,所述方法包括:形成所述第一电极(20); 在所述第一电极的上表面上形成间隔物(30); 形成与间隔物的上表面接触的第二电极(60); 并移除间隔件(30)以形成间隙(70)。