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1.发明授权
公开(公告)号：EP2360701B8
公开(公告)日：2016-08-24
申请号：EP09827604.1
申请日：2009-11-19
发明人： MIYATA, Seiki , FUKUSHIMA, Hiroyuki , KURIKI, Reiji , IBI, Akira , YOSHIZUMI, Masateru , KINOSHITA, Akio , YAMADA, Yutaka , SHIOHARA, Yuh , YOSHIDA, Ryuji , KATO, Takeharu , HIRAYAMA, Tsukasa
IPC分类号： H01L39/24
CPC分类号： H01L39/2461 , Y10T428/24355
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2.发明公开
公开(公告)号：EP2360701A1
公开(公告)日：2011-08-24
申请号：EP09827604.1
申请日：2009-11-19
申请人： International Superconductivity Technology Center, The Juridical Foundation , The Furukawa Electric Co., Ltd. , Japan Fine Ceramics Center
发明人： MIYATA, Seiki , FUKUSHIMA, Hiroyuki , KURIKI, Reiji , IBI, Akira , YOSHIZUMI, Masateru , KINOSHITA, Akio , YAMADA, Yutaka , SHIOHARA, Yuh , YOSHIDA, Ryuji , KATO, Takeharu , HIRAYAMA, Tsukasa
CPC分类号： H01L39/2461 , Y10T428/24355
摘要： Provided is a substrate for superconductive film formation, which includes a metal substrate, and an oxide layer formed directly on the metal substrate, containing chromium oxide as a major component and having a thickness of 10-300 nm and an arithmetic average roughness Ra of not more than 50 nm. A method of manufacturing a substrate for superconductive film formation, which includes forming an oxide layer directly on a metal substrate, the oxide layer containing chromium oxide as a major component and having a thickness of 10-300 nm and an arithmetic average roughness Ra of not more than 50 nm.
摘要翻译： 本发明提供一种超导膜形成，其包括金属基底，并在金属基底上直接形成氧化物层上，含铬氧化物作为主要组分，并且具有的厚度为10-300纳米，以不算术平均粗糙度Ra一个基板 超过50nm。制造用于超导膜形成，其包括在金属基板氧化物层上形成直接，氧化物层含铬氧化物作为主要成分的基片和具有算术的厚度为10-300纳米，的方法 不超过50纳米的平均粗糙度Ra。
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3.发明授权
公开(公告)号：EP2360701B1
公开(公告)日：2016-04-27
申请号：EP09827604.1
申请日：2009-11-19
申请人： International Superconductivity Technology Center, The Juridical Foundation , Furukawa Electric Co., Ltd.
发明人： MIYATA, Seiki , FUKUSHIMA, Hiroyuki , KURIKI, Reiji , IBI, Akira , YOSHIZUMI, Masateru , KINOSHITA, Akio , YAMADA, Yutaka , SHIOHARA, Yuh , YOSHIDA, Ryuji , KATO, Takeharu , HIRAYAMA, Tsukasa
IPC分类号： H01L39/24
CPC分类号： H01L39/2461 , Y10T428/24355
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