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1.发明授权HIGH PRESSURE HIGH TEMPERATURE GROWTH OF CRYSTALLINE GROUP III METAL NITRIDES 有权选育在高压和晶III族金属氮化物的高温
公开(公告)号：EP1490537B1
公开(公告)日：2011-04-13
申请号：EP03709199.8
申请日：2003-02-21
发明人： D'EVELYN, Mark, Philip , WEBB, Steven, William , VAGARALI, Suresh, Shankarappa , KADIOGLU, Yavuz , PARK,Dong-Sil , CHEN, Zheng
CPC分类号： C30B29/403 , B82Y10/00 , B82Y30/00 , C30B7/00 , C30B9/00 , C30B29/406 , Y10T117/1052 , Y10T117/1096
摘要： A method of forming at least one single crystal of a Group III metal nitride. The method includes the steps of: providing a flux material (106) and a source material (102) comprising at least one Group III metal selected from the group consisting of aluminum, indium, and gallium, to a reaction vessel (100); sealing the reaction vessel (100); heating the reaction vessel (100) to a predetermined temperature and applying a predetermined pressure to the vessel. The pressure is sufficient to suppress decomposition of the Group III metal nitride at the temperature. Group III metal nitrides, as well as electronic devices having a Group III metal nitride substrate formed by the method are also disclosed.
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2.发明公开HIGH PRESSURE HIGH TEMPERATURE GROWTH OF CRYSTALLINE GROUP III METAL NITRIDES 有权选育在高压和晶III族金属氮化物的高温
公开(公告)号：EP1490537A1
公开(公告)日：2004-12-29
申请号：EP03709199.8
申请日：2003-02-21
发明人： D'EVELYN, Mark, Philip , WEBB, Steven, William , VAGARALI, Suresh, Shankarappa , KADIOGLU, Yavuz , PARK,Dong-Sil , CHEN, Zheng
CPC分类号： C30B29/403 , B82Y10/00 , B82Y30/00 , C30B7/00 , C30B9/00 , C30B29/406 , Y10T117/1052 , Y10T117/1096
摘要： A method of forming at least one single crystal of a Group III metal nitride. The method includes the steps of: providing a flux material (106) and a source material (102) comprising at least one Group III metal selected from the group consisting of aluminum, indium, and gallium, to a reaction vessel (100); sealing the reaction vessel (100); heating the reaction vessel (100) to a predetermined temperature and applying a predetermined pressure to the vessel. The pressure is sufficient to suppress decomposition of the Group III metal nitride at the temperature. Group III metal nitrides, as well as electronic devices having a Group III metal nitride substrate formed by the method are also disclosed.
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