公开(公告)号：EP2893057A1

公开(公告)日：2015-07-15

申请号：EP13835765.2

申请日：2013-09-09

申请人： GTAT IP HOLDING LLC

发明人： LUTER, William, L. ,  HUANG, Weidong

IPC分类号： C30B15/00 ,  C30B15/10 ,  C30B15/20

CPC分类号： C30B15/12 ,  C30B15/002 ,  C30B15/02 ,  C30B29/06 ,  Y10T117/1052

摘要： The present invention relates to a Czochralski growth apparatus and method, preferably a continuous Czochralski growth apparatus and method, in which solid feedstock provided from a delivery system during ingot growth is substantially prevented from entering the growth zone of a crucible. In this way, an ingot having exceptionally consistent properties is produced.

公开(公告)号：EP2697412A4

公开(公告)日：2014-09-03

申请号：EP12771909

申请日：2012-04-13

申请人： GT ADVANCED CZ LLC

发明人： JOHNSON BAYARD K ,  DELUCA JOHN P ,  LUTER WILLIAM L

IPC分类号： C30B15/04 ,  C30B15/00 ,  C30B15/12 ,  C30B15/20 ,  C30B29/06 ,  H01L31/042 ,  H01L31/18

CPC分类号： C30B15/04 ,  C30B15/002 ,  C30B15/12 ,  C30B29/06 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521 ,  Y10T117/1052 ,  Y10T117/1056

摘要： A Czochralski growth system is disclosed comprising a crucible, a silicon delivery system comprising a feeder having a delivery point overhanging the crucible and delivering a controllable amount of silicon into the crucible, and at least one doping mechanism controllably delivering at least one dopant material to the feeder. The system can comprise two or more doping mechanisms each loaded with a different dopant material and can therefore be used to prepare silicon ingots having multiple dopants. The resulting ingots have substantially constant dopant concentrations along their axes. Also disclosed is a method of Czochralski growth of at least one silicon ingot comprising at least one dopant material, which is preferably a continuous Czochralski method.

公开(公告)号：EP2266923A3

公开(公告)日：2013-04-17

申请号：EP10178951.9

申请日：2005-05-11

申请人： MEMC Electronic Materials, Inc.

发明人： Holder, J.D. ,  Sreedharamurthy, H. ,  Hilker, J.D.

IPC分类号： C01B33/027 ,  B07B4/04

CPC分类号： B07B4/04 ,  C01B33/027 ,  Y10T117/1032 ,  Y10T117/1052 ,  Y10T117/1056 ,  Y10T117/1068

摘要： The invention is directed to an apparatus for reducing dust in granular polysilicon. The system includes a process vessel having a vacuum port for pulling dust from the polysilicon.

公开(公告)号：EP2484814A1

公开(公告)日：2012-08-08

申请号：EP12166336.3

申请日：2004-04-26

申请人： Heraeus Quarzglas GmbH & Co. KG ,  Shin-Etsu Quartz Products Co., Ltd.

发明人： Ohama, Yasuo

IPC分类号： C30B29/06 ,  C30B15/10 ,  C03B19/04 ,  C03B20/00

CPC分类号： C30B29/06 ,  C03B19/095 ,  C30B15/10 ,  Y10T117/10 ,  Y10T117/1032 ,  Y10T117/1052

摘要： A quartz glass crucible which has a non-transparent outer layer formed through melting a natural silica powder and a transparent layer formed in the inside of the outer layer, wherein the number of brown rings per unit area (cm 2 ) observed in the region extending from an initial surface level of a silicon melt to 0.3 M therebelow in terms of a length M from the initial surface level of the silicon melt to a surface level of the remaining melt after pulling up a single crystal measured along the inner surface of the quartz glass crucible, the number of brown rings is at least 1.8-fold greater than a number of brown rings observed in the region up to 0.3 M above the surface level of the remaining melt. The quartz glass crucible can be suitably used for suppressing the occurrence of vibration and reducing the generation of roughened face in the surface of a crucible, and thus for pulling up a silicon single crystal with enhanced stability.

摘要翻译： 一种石英玻璃坩埚，其具有通过熔融天然二氧化硅粉末和形成在外层内部的透明层形成的不透明外层，其中在延伸的区域中观察到的每单位面积（cm 2）的棕色环数 从硅熔体的初始表面水平到下面的0.3M的长度M从硅熔体的初始表面水平到提取沿着石英的内表面测量的单晶的剩余熔体的表面水平 玻璃坩埚中，棕色环的数量比在剩余熔体的表面水平高达0.3M的区域中观察到的棕色环数多至少1.8倍。 石英玻璃坩埚可以适当地用于抑制振动的发生和减少坩埚表面中的粗糙面的产生，从而提高稳定性的硅单晶。

公开(公告)号：EP1632592A4

公开(公告)日：2011-04-13

申请号：EP04729527

申请日：2004-04-26

申请人： SHINETSU QUARTZ PROD ,  HERAEUS QUARZGLAS

发明人： OHAMA YASUO

IPC分类号： C30B29/06 ,  C03B19/04 ,  C03B19/09 ,  C03B20/00 ,  C30B15/00 ,  C30B15/10

CPC分类号： C30B29/06 ,  C03B19/095 ,  C30B15/10 ,  Y10T117/10 ,  Y10T117/1032 ,  Y10T117/1052

公开(公告)号：EP2070882B1

公开(公告)日：2011-02-23

申请号：EP08020769.9

申请日：2008-11-28

申请人： Japan Super Quartz Corporation

发明人： Satou, tadahiro

IPC分类号： C03B19/09 ,  C30B15/10 ,  C03C3/06

CPC分类号： C03B19/095 ,  C30B15/10 ,  C30B29/06 ,  C30B35/002 ,  Y02P40/57 ,  Y10T117/10 ,  Y10T117/1032 ,  Y10T117/1052

公开(公告)号：EP1749123A2

公开(公告)日：2007-02-07

申请号：EP05746729.2

申请日：2005-02-25

申请人： Solaicx, Inc.

发明人： BENDER, David, L.

IPC分类号： C30B15/10

CPC分类号： C30B15/12 ,  C30B15/002 ,  C30B15/02 ,  C30B15/04 ,  C30B15/10 ,  C30B15/14 ,  C30B15/22 ,  C30B29/06 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1024 ,  Y10T117/1032 ,  Y10T117/1052 ,  Y10T117/1056 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/108 ,  Y10T117/1088 ,  Y10T117/1092

摘要： An improved system based on the Czochralski process for continuous growth of a single crystal ingot comprises a low aspect ratio, large diameter, and substantially flat crucible, including an optional weir surrounding the crystal. The low aspect ratio crucible substantially eliminates convection currents and reduces oxygen content in a finished single crystal silicon ingot. A separate level controlled silicon pre-melting chamber provides a continuous source of molten silicon to the growth crucible advantageously eliminating the need for vertical travel and a crucible raising system during the crystal pulling process. A plurality of heaters beneath the crucible establish corresponding thermal zones across the melt. Thermal output of the heaters is individually controlled for providing an optimal thermal distribution across the melt and at the crystal/melt interface for improved crystal growth. Multiple crystal pulling chambers are provided for continuous processing and high throughput.

公开(公告)号：EP1613795A2

公开(公告)日：2006-01-11

申请号：EP04742479.1

申请日：2004-04-09

申请人： Apollon Solar ,  Cyberstar ,  EFD Induction SA

发明人： EINHAUS, Roland ,  LISSALDE, François ,  RIVAT, Pascal

IPC分类号： C30B11/00

CPC分类号： C30B29/605 ,  C30B11/002 ,  Y10S65/08 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1052

摘要： Disclosed is a crucible, the thermal transfer properties of the bottom (7) of which are much greater than those of the sidewalls (8) parallel to an axis extending substantially perpendicular to the bottom (7). Said bottom (7) and the sidewalls (8) are made of materials that are provided with the same main chemical components. The bottom (7) can be transparent to infrared radiation while the sidewalls (8) can be opaque to infrared radiation. The bottom (7) can be made of amorphous silica while the sidewalls (8) can be made of a ceramic material consisting of opaque quartz. The crucible can also be made of graphite. The device can comprise a graphite felt (9) that is disposed between the bottom (7) of the crucible and cooling means (4), and means (10) for compressing the graphite felt (9), allowing a thermal gradient ranging between 8 °C/cm and 30 °C/cm to be defined in the liquid phase.

公开(公告)号：EP1424408A1

公开(公告)日：2004-06-02

申请号：EP03257315.6

申请日：2003-11-19

申请人： Tokuyama Corporation

发明人： Nawata, Teruhiko ,  Miyazaki, Hidetaka ,  Yanagi, Hiroyuki ,  Nitta, Shinichi ,  Ito, Harumasa ,  Yamaga, Isao

IPC分类号： C30B15/14 ,  C30B29/12

CPC分类号： C30B15/14 ,  C30B15/00 ,  C30B29/12 ,  Y10T117/1032 ,  Y10T117/1052 ,  Y10T117/1056 ,  Y10T117/1068 ,  Y10T117/1072

摘要： A single crystal pulling apparatus for a metal fluoride comprising a crucible provided in a chamber and filling a molten solution of a single crystal manufacturing material, a melting heater provided to surround the crucible, a vertically movable single crystal pulling bar including a seed crystal on a tip and coming in contact with the molten solution of the single crystal manufacturing material filled in the crucible, a heat insulating wall provided in the chamber to surround at least a peripheral side portion of a single crystal pulling region in an upper part of the crucible, a ceiling board for closing an opening portion of an upper end in an upper part of the heat insulating wall, and a single crystal pulling chamber surrounded by the heat insulating wall and the ceiling board, wherein the ceiling board is provided with at least an inserting hole for inserting the single crystal pulling bar, and a coefficient of thermal conductivity in a direction of a thickness of the ceiling board is 1000 to 50000 W/m 2 · K.

摘要翻译： 一种用于金属氟化物的单晶拉制装置，包括设置在室中的坩埚并填充单晶制造材料的熔融溶液，设置成围绕坩埚的熔融加热器，包括晶种的可升降单晶拉杆 尖端并与填充在坩埚中的单晶制造材料的熔融溶液接触，设置在该室中的绝热壁，以围绕坩埚上部的单晶拉伸区域的至少周边侧部分， 用于封闭绝热壁的上部的上端的开口部分的天花板和由隔热壁和天花板板围绕的单晶拉制室，其中，所述顶板设置有至少一个插入 用于插入单晶拉杆的孔，以及在天花板bo的厚度方向上的导热系数 ard为1000〜50000W / m 2。 K.

公开(公告)号：EP1199387A1

公开(公告)日：2002-04-24

申请号：EP01904510.3

申请日：2001-02-16

申请人： Shin-Etsu Handotai Co., Ltd

发明人： KIMURA, Masanori, c/o Isobe R&D Center, Shin-Etsu

IPC分类号： C30B15/14 ,  C30B29/06

CPC分类号： C30B15/14 ,  Y10S117/917 ,  Y10T117/10 ,  Y10T117/1052

摘要： By utilizing a crystal pulling apparatus for producing a single crystal according to the Czochralski method comprising at least a crucible to be charged with a raw material, a heater surrounding the crucible, and subsidiary heating means provided below the crucible, a single crystal is pulled or the raw material is additionally introduced with heating by the heater surrounding the crucible and the subsidiary heating means when the amount of the raw material melt in the crucible becomes a limited amount. Thus, there is provided a method for growing a single crystal at a high yield while preventing solidification of melt raw material decreased to a limited amount without affecting crystal quality, durability of crucible or the like even when a crucible having a large diameter is used.

摘要翻译： 通过使用根据切克劳斯基法制造单晶的晶体拉制装置，至少包括要填充原料的坩埚，围绕坩埚的加热器和设置在坩埚下方的辅助加热装置，单晶被拉出或 当在坩埚中熔化的原料量变成有限量时，通过围绕坩埚和辅助加热装置的加热器加热引导原料。 因此，提供了即使当使用具有大直径的坩埚时，也可以以高产率生长单晶的方法，同时防止熔融原料的固化降低到有限的量，而不影响晶体质量，坩埚等的耐久性。