公开(公告)号：EP0045608A3

公开(公告)日：1982-08-04

申请号：EP81303427

申请日：1981-07-27

申请人： GENERAL ELECTRIC COMPANY

发明人： Swab, John Mathew

IPC分类号： H04N03/15 ,  H01L27/14

CPC分类号： H01L27/14862 ,  H04N5/374

摘要： Apparatus is provided for periodically reading image intensity information from M rows x N columns of charge storage sites (3,4) in a CID array imager. The magnitudes of signal charges collected at the sites (3,4) in response to incident radiation are sensed by a measuring circuit (7) which measures changes in potential on column lines (6) connected to (V RC ,V I ) the respective columns of sites. These changes in potential are caused by sequentially applying specific potentials (V RC ,V I ) to row lines (5) connected to the respective rows of sites to effect injection of the signal charges into the substrate of the array. The apparatus operates to minimize charge transfers within the array during readout and is thus capable of accurately determining the magnitude of signal charges in arrays fabricated from semiconductor materials having low charge transfer efficiencies. The apparatus includes means (SPS;Sv;7) for eliminating the effects of thermal (KT/C) noise from output voltages (e o ,E o ) representative of the signal charge magnitudes.

公开(公告)号：EP0045608A2

公开(公告)日：1982-02-10

申请号：EP81303427.9

申请日：1981-07-27

申请人： GENERAL ELECTRIC COMPANY

发明人： Swab, John Mathew

IPC分类号： H04N3/15 ,  H01L27/14

CPC分类号： H01L27/14862 ,  H04N5/374

摘要： Apparatus is provided for periodically reading image intensity information from M rows x N columns of charge storage sites (3,4) in a CID array imager. The magnitudes of signal charges collected at the sites (3,4) in response to incident radiation are sensed by a measuring circuit (7) which measures changes in potential on column lines (6) connected to (V RC ,V I ) the respective columns of sites. These changes in potential are caused by sequentially applying specific potentials (V RC ,V I ) to row lines (5) connected to the respective rows of sites to effect injection of the signal charges into the substrate of the array. The apparatus operates to minimize charge transfers within the array during readout and is thus capable of accurately determining the magnitude of signal charges in arrays fabricated from semiconductor materials having low charge transfer efficiencies. The apparatus includes means (SPS;Sv;7) for eliminating the effects of thermal (KT/C) noise from output voltages (e o ,E o ) representative of the signal charge magnitudes.

公开(公告)号：EP0045608B1

公开(公告)日：1986-02-12

申请号：EP81303427.9

申请日：1981-07-27

申请人： GENERAL ELECTRIC COMPANY

发明人： Swab, John Mathew

IPC分类号： H04N3/15 ,  H01L27/14

CPC分类号： H01L27/14862 ,  H04N5/374