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1.发明授权
公开(公告)号：EP0415576B1
公开(公告)日：1993-07-07
申请号：EP90308620.5
申请日：1990-08-06
CPC分类号： G01D5/147 , G01B7/003 , Y10T29/4902
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公开(公告)号：EP0305072A3
公开(公告)日：1990-10-10
申请号：EP88307298.5
申请日：1988-08-08
CPC分类号： G01F1/6845 , G01F1/6888 , G01F1/7084
摘要： An air flow sensor which employs a thermocouple (50) using a continuous film (40) of bismuth 0.92 antimony 0.08 to form junctions with gold, platinum or nickel strips and a resistive strip heater (34) of the same metal.
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公开(公告)号：EP0268386A2
公开(公告)日：1988-05-25
申请号：EP87309299.3
申请日：1987-10-21
CPC分类号： H01L29/24 , H01L29/7606
摘要： A tunnelling transistor has an injector layer (32) separated from a channel (28) by a tunnelling barrier (30) of narrow band gap semiconductor material. When biased to threshold with a first voltage, the injector layer injects charge carriers through the tunnelling barrier and into the channel by quantum-mechanical tunnelling. Two spaced-apart contact regions (24,26) disposed on each side of the channel are provided to establish a current which flows between the contact regions through the channel when the channel resistance is lowered by the injection of charge carriers across the tunnelling barrier. By biasing the injector layer with a second voltage, the tunnelling process is reversed, causing charge carriers to tunnel from the channel back through the tunnelling barrier and into the injector layer. The channel current flowing between contact regions is turned off when channel resistance is sufficiently increased. Since tunnelling is inherently a fast process, the transistor has an ultra-fast switching time.
摘要翻译： 隧道晶体管具有通过窄带隙半导体材料的隧道势垒（30）与沟道（28）分离的注入层（32）。 当用第一电压偏置到阈值时，注入器层通过隧道势垒注入电荷载流子，并通过量子力学隧道将注入层插入沟道。 设置在通道的每一侧上的两个间隔开的接触区域（24,26）被设置成当通过穿过隧穿势垒注入电荷载流子来降低沟道电阻时，建立通过沟道在接触区域之间流动的电流。 通过用第二电压偏压注入层，隧穿过程相反，使电荷载体从沟道穿过隧道势垒并进入注入层。 当沟道电阻充分增加时，在接触区域之间流动的沟道电流被关断。 由于隧道本质上是一个快速的过程，晶体管具有超快的切换时间。
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5.发明公开Method of making a permanent magnet sensor element with a soft magnetic layer 失效一种用于与软磁性层产生的永久磁传感器元件的方法。
公开(公告)号：EP0415576A1
公开(公告)日：1991-03-06
申请号：EP90308620.5
申请日：1990-08-06
CPC分类号： G01D5/147 , G01B7/003 , Y10T29/4902
摘要： A position sensor (10) is made by assembling a permanent magnet (14), a soft magnetic layer (16) on the magnet (14), a magnetoresistive sensor element (18) on the soft magnetic layer (16), and a toothed ferritic member (20) mounted for movement past the sensor element (18). The permanent magnet (14) is surface-treated to form, in situ, the soft magnetic layer (16) comprising a thin layer of high-permeability, low-coercivity material. An Nd-Fe-B alloy magnet (14) is surface-treated by a laser or electron beam to melt a thin layer (16) which is then cooled to re-solidify into a soft magnetic material. Rapid cooling achieves an amorphous surface layer having the desired properties. Slow cooling results in the formation of alpha-iron grains which enhance the soft magnetic properties. Iron formation is aided by reacting the molten layer with an oxidizing atmosphere. Iron alloying by adding iron powder to the molten layer is also feasible.
摘要翻译： 位置传感器（10），是通过组装在磁体的永磁体（14），一软磁性层（16）（14），所述软磁性层（16）上的磁阻传感器元件（18），和一个带齿制成 安装用于经过所述传感器元件（18）移动的铁素体部件（20）。 所述永磁体（14）进行表面处理，以形成，原位，软磁性层（16）包括高磁导率，低矫顽力材料构成的薄层。 的Nd-Fe-B合金磁体（14）是表面处理过的通过激光或电子束熔化的薄层（16），然后将其冷却至再固化成软磁性材料。 快速冷却以达到对具有期望性质的无定形表面层。 缓慢冷却的结果中的α-铁颗粒，其增强的软磁特性的形成。 铁形成是通过使用在氧化性气氛中熔融层辅助。 所以铁的合金中加入铁粉到熔融层是可行的。
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公开(公告)号：EP0375108A3
公开(公告)日：1990-11-22
申请号：EP89307122.5
申请日：1989-07-13
IPC分类号： H01L43/08
CPC分类号： H01L43/08
摘要： A magnetoresistive sensor that includes a thin film of nominally undoped monocrystalline indium arsenide. An indium arsenide film is described that appears to have a naturally occurring accumulation layer adjacent its outer surface. With film thicknesses below 5 micrometres, preferably below 3 micrometres, the presence of the accumulation layer has a very noticeable effect. A method for making the sensor is also described. The unexpected improvement provides a significant apparent increase in mobility and conductivity of the indium arsenide, and an actual increase in magnetic sensitivity and temperature insensitivity.
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公开(公告)号：EP0375108A2
公开(公告)日：1990-06-27
申请号：EP89307122.5
申请日：1989-07-13
IPC分类号： H01L43/08
CPC分类号： H01L43/08
摘要： A magnetoresistive sensor that includes a thin film of nominally undoped monocrystalline indium arsenide. An indium arsenide film is described that appears to have a naturally occurring accumulation layer adjacent its outer surface. With film thicknesses below 5 micrometres, preferably below 3 micrometres, the presence of the accumulation layer has a very noticeable effect. A method for making the sensor is also described. The unexpected improvement provides a significant apparent increase in mobility and conductivity of the indium arsenide, and an actual increase in magnetic sensitivity and temperature insensitivity.
摘要翻译： 一种磁阻传感器，其包括名义上未掺杂的单晶砷化铟的薄膜。 描述了似乎在其外表面附近具有天然存在的积聚层的砷化铟膜。 当膜厚度小于5微米，优选低于3微米时，积聚层的存在具有非常明显的效果。 还描述了制造传感器的方法。 意想不到的改善提供了砷化铟的迁移率和电导率的显着增加，并且磁敏感性和温度不敏感性的实际增加。
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公开(公告)号：EP0305072A2
公开(公告)日：1989-03-01
申请号：EP88307298.5
申请日：1988-08-08
CPC分类号： G01F1/6845 , G01F1/6888 , G01F1/7084
摘要： An air flow sensor which employs a thermocouple (50) using a continuous film (40) of bismuth 0.92 antimony 0.08 to form junctions with gold, platinum or nickel strips and a resistive strip heater (34) of the same metal.
摘要翻译： 一种空气流量传感器，其使用使用铋0.92锑0.08的连续薄膜（40）的热电偶（50），以形成与金，铂或镍带的连接点和相同金属的电阻带状加热器（34）。
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