公开(公告)号：EP0226311A3

公开(公告)日：1988-09-21

申请号：EP86308475

申请日：1986-10-30

申请人： GTE LABORATORIES INCORPORATED

发明人： PRINCE, FRANCISCO C. ,  ARMIENTO, CRAIG A.

IPC分类号： C23C14/48 ,  H01L21/265 ,  H01L21/324

CPC分类号： H01L21/3245 ,  Y10S148/065 ,  Y10S148/084

摘要： A method of rapid thermal annealing a wafer (10) of an ion implanted III-V compound semiconductor material by heating the wafer (10) in close proximity to a III-V compound semiconductor wafer (13) coated with a layer (14) of tin or indium. A localized overpressure of the Group V element is produced by the combination of the III and V elements with the tin or indium tending to reduce surface decomposition of the implanted wafer.

摘要翻译： 通过将晶片靠近涂覆有锡或铟层的III-V化合物半导体晶片加热晶片，快速热退火离子注入III-V族化合物半导体材料的晶片的方法。 通过III和V元素与锡或铟的组合产生V族元素的局部超压，倾向于减少注入晶片的表面分解。