公开(公告)号：EP4387102A1

公开(公告)日：2024-06-19

申请号：EP23198270.3

申请日：2023-09-19

申请人： GlobalFoundries U.S. Inc.

发明人： Tran, Dzung T. ,  Pant, Deepti A. ,  Ahmed, Shibly S.

IPC分类号： H03K19/003

CPC分类号： H03K19/00315

摘要： Disclosed is an input buffer with hysteresis-integrated voltage protection devices for avoiding violations of maximum gate-to-source voltage limitations when the maximum input voltage is greater than the maximum gate-to-source voltage limitation. The input buffer includes a chain of transistors including two P-channel FETs (PFETs) and two N-channel FETs (NFETs). The data input to the input buffer controls the gates of the transistors in the chain so the data output from the input buffer at the junction between the PFETs and NFETs is inverted. The input buffer also includes a hysteresis feedback loop to prevent noise-induced switching of the output. The hysteresis feedback loop also includes voltage protection devices integrated therein to avoid maximum gate-to-source violations when the loop results in a hysteresis voltage being fed back into the chain at the source region of a transistor in the chain. Also disclosed is a receiver incorporating the input buffer.