-
公开(公告)号：EP2103958A3
公开(公告)日：2013-10-09
申请号：EP09007290.1
申请日：2005-05-10
IPC分类号： G01T1/20
CPC分类号： H01L27/14618 , G01T1/2018 , H01L31/0203 , H01L31/02322 , H01L2924/0002 , H04N5/32 , H01L2924/00
摘要： Wiring substrates 11 and 12 are positioned on a fixed base 10 in a manner such that there is a step between the wiring substrates, and radiation imaging elements 2 and 3, respectively having scintillators 25 and 35 deposited on photosensitive portions 21 and 31, are respectively mounted on the wiring substrates 11 and 12. The radiation imaging element 2 is positioned so that its setting surface protrudes beyond a radiation incident surface of the radiation imaging element 3, and the photosensitive portion 21 of the radiation imaging element 2 and the photosensitive portion 31 of the radiation imaging element 3 are juxtaposed to a degree to which the portions do not overlap. The photosensitive portion 21 of the radiation imaging element 2 extends close to an edge at the radiation imaging element 3 side and the scintillator 25 of substantially uniform thickness is formed up to this position.
-
公开(公告)号：EP2103958B1
公开(公告)日：2017-08-02
申请号：EP09007290.1
申请日：2005-05-10
IPC分类号： G01T1/20
CPC分类号： H01L27/14618 , G01T1/2018 , H01L31/0203 , H01L31/02322 , H01L2924/0002 , H04N5/32 , H01L2924/00
-
公开(公告)号：EP2727532A1
公开(公告)日：2014-05-07
申请号：EP14153021.2
申请日：2009-06-11
发明人： Mori, Harumichi , Kyushima, Ryuji , Fujita, Kazuki
CPC分类号： H04N5/3694 , A61B6/06 , A61B6/14 , A61B6/4233 , G01T1/2018 , H01L27/14663 , H04N5/32 , H04N5/3743 , H04N5/378
摘要： A solid-state image pickup device 1 includes a semiconductor substrate 3A having a pixel array 10A with pixels arrayed in M rows and NA columns, a semiconductor substrate 3B having a pixel array 10B with pixels arrayed in M rows and NB columns, and a first column of which is arranged along an NA-th column of the pixel array 10A, and a signal output section 20. The signal output section 20 outputs digital values corresponding to the respective columns from the first column to the n-th column (2≤n
摘要翻译： 固态图像拾取装置1包括：半导体衬底3A，具有像素阵列10A，像素排列成M行和NA列;半导体衬底3B，具有像素排列10B，像素排列成M行和NB列;第一 其列被布置在像素阵列10A的第NA列中;以及信号输出部分20.信号输出部分20输出对应于从第一列到第n列（2≤ 像素阵列10A的n（n
-
公开(公告)号：EP2727532B1
公开(公告)日：2017-07-26
申请号：EP14153021.2
申请日：2009-06-11
发明人： Mori, Harumichi , Kyushima, Ryuji , Fujita, Kazuki
CPC分类号： H04N5/3694 , A61B6/06 , A61B6/14 , A61B6/4233 , G01T1/2018 , H01L27/14663 , H04N5/32 , H04N5/3743 , H04N5/378
-
公开(公告)号：EP2103958A2
公开(公告)日：2009-09-23
申请号：EP09007290.1
申请日：2005-05-10
IPC分类号： G01T1/20
CPC分类号： H01L27/14618 , G01T1/2018 , H01L31/0203 , H01L31/02322 , H01L2924/0002 , H04N5/32 , H01L2924/00
摘要： Wiring substrates 11 and 12 are positioned on a fixed base 10 in a manner such that there is a step between the wiring substrates, and radiation imaging elements 2 and 3, respectively having scintillators 25 and 35 deposited on photosensitive portions 21 and 31, are respectively mounted on the wiring substrates 11 and 12. The radiation imaging element 2 is positioned so that its setting surface protrudes beyond a radiation incident surface of the radiation imaging element 3, and the photosensitive portion 21 of the radiation imaging element 2 and the photosensitive portion 31 of the radiation imaging element 3 are juxtaposed to a degree to which the portions do not overlap. The photosensitive portion 21 of the radiation imaging element 2 extends close to an edge at the radiation imaging element 3 side and the scintillator 25 of substantially uniform thickness is formed up to this position.
摘要翻译： 接线基板11,12以这样的方式被定位在固定基座10上，使得在布线基板之间分别具有分别具有沉积在感光部分21和31上的闪烁体25和35的辐射成像元件2和3 安装在布线基板11和12上。放射线成像元件2被定位成使得其设置表面突出超过辐射成像元件3的辐射入射表面，并且辐射成像元件2的感光部分21和感光部分31 辐射成像元件3的一部分并置于该部分不重叠的程度。 辐射摄像元件2的感光部分21靠近辐射摄像元件3侧的边缘延伸，并且形成基本上均匀厚度的闪烁器25直到该位置。
-
-
-
-
搜索结果
5 条记录 (耗时 0.008 秒)
