公开(公告)号：EP3118948A4

公开(公告)日：2017-12-13

申请号：EP15762037

申请日：2015-03-03

申请人： HAMAMATSU PHOTONICS KK

发明人： ZHENG YUJIN ,  KAN HIROFUMI

IPC分类号： H01S5/14 ,  H01S3/08 ,  H01S3/081 ,  H01S5/026 ,  H01S5/40

CPC分类号： H01S5/4062 ,  H01S3/0804 ,  H01S3/08081 ,  H01S3/0815 ,  H01S5/02438 ,  H01S5/026 ,  H01S5/10 ,  H01S5/141 ,  H01S5/4025 ,  H01S5/405 ,  H01S5/4068 ,  H01S5/42

摘要： A semiconductor laser device includes: a semiconductor laser array in which a plurality of active layers that emit laser lights with a divergence angle ¸ S (>4°) in a slow axis direction are arranged in the slow axis direction; a first optical element that reflects first partial lights advancing to one side in the slow axis direction by a first reflecting surface and returns the first partial lights to the active layers; and a second optical element that reflects partial mode lights of a plurality of mode beams of second partial lights advancing to the other side in the slow axis direction by a second reflecting surface and returns the partial mode lights to the active layers, the first optical element is disposed such that the first reflecting surface forms an angle equal to or greater than 2° and less than (¸ S /2) with a plane perpendicular to an optical axis direction of the active layers, and the second optical element is disposed such that the second reflecting surface forms an angle greater than (-¸ S /2) and equal to or less than -2° with the plane perpendicular to the optical axis direction of the active layers.