公开(公告)号：EP0142737B1

公开(公告)日：1993-10-06

申请号：EP84112839.0

申请日：1984-10-25

申请人： HARRIS CORPORATION

发明人： Short, John P. ,  McLachlan, Craig J. ,  Messmer, Charles ,  Reinecke, Paul S.

IPC分类号： H01L21/76 ,  H01L21/306

CPC分类号： H01L21/76297

公开(公告)号：EP0142737A3

公开(公告)日：1987-11-25

申请号：EP84112839

申请日：1984-10-25

申请人： HARRIS CORPORATION

发明人： Short, John P. ,  McLachlan, Craig J. ,  Messmer, Charles ,  Reinecke, Paul S.

IPC分类号： H01L21/76 ,  H01L21/306

CPC分类号： H01L21/76297

摘要： Plane indicating moats are formed extending through an epitaxial layer into a substrate simultaneous with the formation of the isolation moats which terminate within the epitax- lallayer. The substrate is ground to a predetermined thickness after formation of the dielectric isolation and support structure. The composite structure is inserted in an etchant with conditions set to electrochemically etch only the substrate. The exposed plane indicating moats are used as a reference for a final polishing step.

公开(公告)号：EP0142737A2

公开(公告)日：1985-05-29

申请号：EP84112839.0

申请日：1984-10-25

申请人： HARRIS CORPORATION

发明人： Short, John P. ,  McLachlan, Craig J. ,  Messmer, Charles ,  Reinecke, Paul S.

IPC分类号： H01L21/76 ,  H01L21/306

CPC分类号： H01L21/76297

摘要： Plane indicating moats are formed extending through an epitaxial layer into a substrate simultaneous with the formation of the isolation moats which terminate within the epitax- lallayer. The substrate is ground to a predetermined thickness after formation of the dielectric isolation and support structure. The composite structure is inserted in an etchant with conditions set to electrochemically etch only the substrate. The exposed plane indicating moats are used as a reference for a final polishing step.

摘要翻译： 平面指示沟槽形成为延伸穿过外延层进入衬底，同时形成终止于外延层内的隔离护城河。 在形成介质隔离和支撑结构之后，将衬底研磨成预定的厚度。 将复合结构插入蚀刻剂中，其条件设置为仅电化学蚀刻衬底。 曝光的平面指示护城河被用作最终抛光步骤的参考。