Focused ion beam apparatus and method for irradiating focused ion beam
    3.
    发明公开
    Focused ion beam apparatus and method for irradiating focused ion beam 失效
    使用聚焦离子束聚焦离子束发生装置和照射方法

    公开(公告)号:EP0734045A3

    公开(公告)日:1997-11-12

    申请号:EP96103903.9

    申请日:1996-03-12

    申请人: HITACHI, LTD.

    IPC分类号: H01J37/30

    摘要: In an optical system, the total optical path length from the emitter tip of an ion source (1) to the surface of a sample (10) is in the range of from 300 to 450 mm, the distance from the ion source to the centre of a condenser lens (2) is in the range of from 15 to 45 mm, and the distance from the centre of an objective lens (8) to the sample is in the range of from 10 to 40 mm. The optical system is installed in a focused ion beam apparatus in order to realise milling of fine elements to high accuracy at high speed, image observation with high resolution in failure analysis and process evaluation of fine elements such as semiconductors.

    Focused ion beam apparatus and method for irradiating focused ion beam
    4.
    发明公开
    Focused ion beam apparatus and method for irradiating focused ion beam 失效
    Fokussierte Ionenstrahlen erzeugende Vorrichtung und Bestrahlungsverfahren mittels eines fokussierten Ionenstrahls

    公开(公告)号:EP0734045A2

    公开(公告)日:1996-09-25

    申请号:EP96103903.9

    申请日:1996-03-12

    申请人: HITACHI, LTD.

    IPC分类号: H01J37/30

    摘要: In an optical system, the total optical path length from the emitter tip of an ion source (1) to the surface of a sample (10) is in the range of from 300 to 450 mm, the distance from the ion source to the centre of a condenser lens (2) is in the range of from 15 to 45 mm, and the distance from the centre of an objective lens (8) to the sample is in the range of from 10 to 40 mm. The optical system is installed in a focused ion beam apparatus in order to realise milling of fine elements to high accuracy at high speed, image observation with high resolution in failure analysis and process evaluation of fine elements such as semiconductors.

    摘要翻译: 在光学系统中,从离子源(1)的发射极尖端到样品(10)的表面的总光路长度在从300到450mm的范围内,从离子源到中心的距离 聚光透镜(2)的距离在15至45mm的范围内,并且从物镜(8)的中心到样品的距离在10至40mm的范围内。 光学系统安装在聚焦离子束装置中,以实现高精度高精度铣削,高分辨率图像观察,半导体等精细元件的工艺评估。