A method of treating a sample of aluminium-containing material
    2.
    发明公开
    A method of treating a sample of aluminium-containing material 失效
    维尔法赫恩zur Behandlung eines铝enthaltenden Musters。

    公开(公告)号:EP0416774A1

    公开(公告)日:1991-03-13

    申请号:EP90309106.4

    申请日:1990-08-20

    申请人: HITACHI, LTD.

    IPC分类号: H01L21/321

    摘要: A post-etch treatment method is provided which is capable of imparting high corrosion prevention performance to aluminum-containing wiring films. The sample of aluminum-containing wiring material that is etched using the halogen-type gas is treated with the plasma of a gas that has an oxygen component, and the resist formed on the aluminum-containing wiring material is reacted with oxygen and is removed. Further, a plasma is generated using a gas having a hydrogen component or this gas is liquefied into droplets thereof on the sample surface, so that halogen components (Cl, Br, etc.) adhered to the aluminum-­containing wiring material through the etching treatment are reacted with hydrogen and are effectively removed in the form of hydrogen chloride (HCl) or hydrogen bromide (HBr).

    摘要翻译: 提供了能够赋予含铝布线膜高的防腐蚀性能的蚀刻后处理方法。 使用具有氧成分的气体的等离子体处理使用卤素型气体蚀刻的含铝布线材料的样品,并且使含铝布线材料上形成的抗蚀剂与氧反应并除去。 此外,使用具有氢成分的气体产生等离子体,或者该气体在样品表面液化成液滴,使得卤素成分(Cl,Br等)通过蚀刻处理粘附到含铝布线材料 与氢反应,并有效地以氯化氢(HCl)或溴化氢(HBr)的形式除去。