公开(公告)号：EP0383567A3

公开(公告)日：1991-06-12

申请号：EP90301559.2

申请日：1990-02-14

申请人： HITACHI, LTD.

发明人： Watamabe, Seiichi ,  Nawata, Makoto ,  Fukuyama, Ryooji ,  Kakehi, Yutaka ,  Kanai, Saburo ,  Ueyama, Keiji

IPC分类号： H01J37/32 ,  H05H1/46

CPC分类号： H01J37/32266 ,  H01J37/32192

摘要： In a microwave plasma processing method and apparatus, the electromagnetic field intensity distribution of the microwaves, which is incident into a plasma generation chamber (2) and is again incident due to irregular reflection, is made uniform by means (15) fixed inside a waveguide (3). A processing gas is converted to plasma by the microwaves having uniform electromagnetic field intensity distribution, and a sample is plasma-processed. Accordingly, the electromagnetic field of the microwave, which is incident, and is again incident, into the plasma generation region and locally increases a plasma density, is absorbed, attenuated or diffused so that the distribution of the plasma density is made uniform and uniform processing can be effected.

公开(公告)号：EP0478283B1

公开(公告)日：1996-12-27

申请号：EP91308702.9

申请日：1991-09-24

申请人： HITACHI, LTD.

发明人： Kanai, Saburo ,  Kawasaki, Yoshinao ,  Ichihashi, Kazuaki ,  Watanabe, Seiichi ,  Nawata, Makoto

IPC分类号： H01J37/32

CPC分类号： H01J37/32229 ,  H01J37/32192 ,  H01J37/32238 ,  H01J37/32266

公开(公告)号：EP0478283A3

公开(公告)日：1992-05-20

申请号：EP91308702.9

申请日：1991-09-24

申请人： HITACHI, LTD.

发明人： Kanai, Saburo ,  Kawasaki, Yoshinao ,  Ichihashi, Kazuaki ,  Watanabe, Seiichi ,  Nawata, Makoto

IPC分类号： H01J37/32

CPC分类号： H01J37/32229 ,  H01J37/32192 ,  H01J37/32238 ,  H01J37/32266

摘要： The present invention relates to a microwave plasma processing method and apparatus. More particularly, it relates to a microwave plasma processing method and apparatus of the type wherein a waveguide section includes electric discharge means (30a) isolated from a waveguide (110a) for the propagation of microwaves and having a plasma generation region therein, which method and apparatus are well suited for subjecting samples (90), such as semiconductor device substrates, to an etching process, a film forming process, etc. According to the present invention, the microwaves are introduced into the electric discharge means (30a) in correspondence with only the traveling direction thereof, whereby uniformity in a plasma density distribution corresponding to the surface to-be-processed of the sample (90) can be sharply enhanced, so that the sample processed by utilizing such plasma can attain an enhanced processing homogeneity within the surface processed.

公开(公告)号：EP0809283A3

公开(公告)日：1998-02-25

申请号：EP97107985.0

申请日：1990-08-20

申请人： HITACHI, LTD.

发明人： Fukuyama, Ryooji ,  Nawata, Makoto ,  Kakehi, Yutaka ,  Kawahara, Hironobu ,  Sato, Yoshiaki ,  Torii, Yoshimi ,  Kawaraya, Akira ,  Sato, Yoshie (nee Tanaka)

IPC分类号： H01L21/321 ,  H01L21/00

CPC分类号： H01L21/02071 ,  C23F4/00 ,  Y10S438/906 ,  Y10T428/12528 ,  Y10T428/12736 ,  Y10T428/31678

摘要： A post-etch treatment method is provided which is capable of imparting high corrosion prevention performance to aluminum-containing wiring films. The sample of aluminum-containing wiring material that is etched using the halogen-type gas is treated with the plasma of a gas that has an oxygen component, and the resist formed on the aluminum-containing wiring material is reacted with oxygen and is removed. Further, a plasma is generated using a gas having a hydrogen component or this gas is liquefied into droplets thereof on the sample surface, so that halogen components (Cl, Br, etc.) adhered to the aluminum-containing wiring material through the etching treatment are reacted with hydrogen and are effectively removed in the form of hydrogen chloride (HCl) or hydrogen bromide (HBr).

公开(公告)号：EP0809283A2

公开(公告)日：1997-11-26

申请号：EP97107985.0

申请日：1990-08-20

申请人： HITACHI, LTD.

发明人： Fukuyama, Ryooji ,  Nawata, Makoto ,  Kakehi, Yutaka ,  Kawahara, Hironobu ,  Sato, Yoshiaki ,  Torii, Yoshimi ,  Kawaraya, Akira ,  Sato, Yoshie (nee Tanaka)

IPC分类号： H01L21/321 ,  H01L21/00

CPC分类号： H01L21/02071 ,  C23F4/00 ,  Y10S438/906 ,  Y10T428/12528 ,  Y10T428/12736 ,  Y10T428/31678

摘要： A post-etch treatment method is provided which is capable of imparting high corrosion prevention performance to aluminum-containing wiring films. The sample of aluminum-containing wiring material that is etched using the halogen-type gas is treated with the plasma of a gas that has an oxygen component, and the resist formed on the aluminum-containing wiring material is reacted with oxygen and is removed. Further, a plasma is generated using a gas having a hydrogen component or this gas is liquefied into droplets thereof on the sample surface, so that halogen components (Cl, Br, etc.) adhered to the aluminum-containing wiring material through the etching treatment are reacted with hydrogen and are effectively removed in the form of hydrogen chloride (HCl) or hydrogen bromide (HBr).

摘要翻译： 提供了能够赋予含铝布线膜高的防腐蚀性能的蚀刻后处理方法。 使用具有氧成分的气体的等离子体处理使用卤素型气体蚀刻的含铝布线材料的样品，并且使含铝布线材料上形成的抗蚀剂与氧反应并除去。 此外，使用具有氢成分的气体产生等离子体，或者该气体在样品表面液化成液滴，使得卤素成分（Cl，Br等）通过蚀刻处理粘附到含铝布线材料 与氢反应，并有效地以氯化氢（HCl）或溴化氢（HBr）的形式除去。

公开(公告)号：EP0416774B1

公开(公告)日：2000-11-15

申请号：EP90309106.4

申请日：1990-08-20

申请人： HITACHI, LTD.

发明人： Fukuyama, Ryooji ,  Kakehi, Yutaka ,  Nawata, Makoto ,  Kawahara, Hironobu ,  Sato Yoshiaki ,  Torii, Yoshimi ,  Kawaraya, Akira ,  Sato, Yoshie

IPC分类号： H01L21/321

CPC分类号： H01L21/02071 ,  C23F4/00 ,  Y10S438/906 ,  Y10T428/12528 ,  Y10T428/12736 ,  Y10T428/31678

公开(公告)号：EP0683510A1

公开(公告)日：1995-11-22

申请号：EP95303360.2

申请日：1995-05-19

申请人： HITACHI, LTD.

发明人： Ogawa, Yoshifumi ,  Yasunami, Hisao ,  Tsujimoto, Kasunori ,  Nawata, Makoto ,  Kaji, Tetsunori

IPC分类号： H01L21/3065 ,  C23F1/12

CPC分类号： H01L21/32137

摘要： The present invention enhances silicon etching rate and improves the productivity of a silicon etching apparatus. In a vacuum chamber, plasma etching is performed. Chlorine gas is supplied at a rate of 250 ml/min or above, oxygen gas is added to the chlorine gas at 2.0% by volume or less relative to the chlorine gas. The workpiece is maintained at 0°C or below or the stage mounted with the workpiece is maintained at -10°C or below during etching.

摘要翻译： 本发明提高硅蚀刻速度并提高硅蚀刻装置的生产率。 在真空室中进行等离子体蚀刻。 以250ml / min以上的速度供给氯气，相对于氯气，向氯气中添加2.0体积％以下的氧气。 将工件保持在0℃以下，或者在刻蚀时将工件安装在-10℃以下。

公开(公告)号：EP0502269A1

公开(公告)日：1992-09-09

申请号：EP91301844.6

申请日：1991-03-06

申请人： HITACHI, LTD.

发明人： Watanabe, Seiichi ,  Nawata, Makoto ,  Fukuyama, Ryooji ,  Kakehi, Yutaka ,  Kanai, Saburo ,  Kawasaki, Yoshinao

IPC分类号： H01J37/32 ,  H05H1/46

CPC分类号： H01J37/32266 ,  H01J37/32192

摘要： Herein disclosed are a microwave plasma treating method and a system therefor. A slow wave structure (19) is disposed in the propagation region of microwaves, and the microwaves are thus introduced at a delayed phase velocity into a discharge chamber 10 in which gases are transformed into plasma. Thus, the phase velocity of the microwaves is adjusted to a relatively low velocity, at which charged particles are distributed most densely in the plasma, so that the energy may be efficiently transformed to much more charged particles in the plasma. Thus, the plasma of high density is generated to improve the plasma treating rate.

摘要翻译： 本文公开了微波等离子体处理方法及其系统。 慢波结构（19）设置在微波的传播区域中，并且微波因此以延迟的相速度被引入放电室10中，其中气体被转换成等离子体。 因此，将微波的相速度调节到相对较低的速度，在该速度下，带电粒子最密集地分布在等离子体中，使得能量可以有效地转化成等离子体中更多的带电粒子。 因此，产生高密度的等离子体以提高等离子体处理速率。

公开(公告)号：EP0478283A2

公开(公告)日：1992-04-01

申请号：EP91308702.9

申请日：1991-09-24

申请人： HITACHI, LTD.

发明人： Kanai, Saburo ,  Kawasaki, Yoshinao ,  Ichihashi, Kazuaki ,  Watanabe, Seiichi ,  Nawata, Makoto

IPC分类号： H01J37/32

CPC分类号： H01J37/32229 ,  H01J37/32192 ,  H01J37/32238 ,  H01J37/32266

摘要： The present invention relates to a microwave plasma processing method and apparatus. More particularly, it relates to a microwave plasma processing method and apparatus of the type wherein a waveguide section includes electric discharge means (30a) isolated from a waveguide (110a) for the propagation of microwaves and having a plasma generation region therein, which method and apparatus are well suited for subjecting samples (90), such as semiconductor device substrates, to an etching process, a film forming process, etc.
According to the present invention, the microwaves are introduced into the electric discharge means (30a) in correspondence with only the traveling direction thereof, whereby uniformity in a plasma density distribution corresponding to the surface to-be-processed of the sample (90) can be sharply enhanced, so that the sample processed by utilizing such plasma can attain an enhanced processing homogeneity within the surface processed.

摘要翻译： 本发明涉及微波等离子体处理方法和装置。 更具体地说，本发明涉及一种微波等离子体处理方法和装置，其中波导部分包括从用于传播微波并且具有等离子体产生区域的波导（110a）隔离的放电装置（30a），该方法和 设备非常适合于对诸如半导体器件基板的样品（90）进行蚀刻处理，成膜工艺等。根据本发明，微波对应于 只有其行进方向，从而可以急剧增强对应于样品（90）的待处理表面的等离子体密度分布的均匀性，使得通过利用这种等离子体处理的样品可以获得增强的处理均匀性 表面处理。

公开(公告)号：EP0416774A1

公开(公告)日：1991-03-13

申请号：EP90309106.4

申请日：1990-08-20

申请人： HITACHI, LTD.

发明人： Fukuyama, Ryooji ,  Kakehi, Yutaka ,  Nawata, Makoto ,  Kawahara, Hironobu ,  Sato Yoshiaki ,  Torii, Yoshimi ,  Kawaraya, Akira ,  Sato, Yoshie

IPC分类号： H01L21/321

CPC分类号： H01L21/02071 ,  C23F4/00 ,  Y10S438/906 ,  Y10T428/12528 ,  Y10T428/12736 ,  Y10T428/31678

摘要： A post-etch treatment method is provided which is capable of imparting high corrosion prevention performance to aluminum-containing wiring films. The sample of aluminum-containing wiring material that is etched using the halogen-type gas is treated with the plasma of a gas that has an oxygen component, and the resist formed on the aluminum-containing wiring material is reacted with oxygen and is removed. Further, a plasma is generated using a gas having a hydrogen component or this gas is liquefied into droplets thereof on the sample surface, so that halogen components (Cl, Br, etc.) adhered to the aluminum-­containing wiring material through the etching treatment are reacted with hydrogen and are effectively removed in the form of hydrogen chloride (HCl) or hydrogen bromide (HBr).

摘要翻译： 提供了能够赋予含铝布线膜高的防腐蚀性能的蚀刻后处理方法。 使用具有氧成分的气体的等离子体处理使用卤素型气体蚀刻的含铝布线材料的样品，并且使含铝布线材料上形成的抗蚀剂与氧反应并除去。 此外，使用具有氢成分的气体产生等离子体，或者该气体在样品表面液化成液滴，使得卤素成分（Cl，Br等）通过蚀刻处理粘附到含铝布线材料 与氢反应，并有效地以氯化氢（HCl）或溴化氢（HBr）的形式除去。