利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

4 条记录 (耗时 0.01 秒)

    Electron microscope specimen holder
    2.
    发明公开
    Electron microscope specimen holder 失效
    ProbenhalterfürElektrodenmikroskop。

    公开(公告)号：EP0538861A1

    公开(公告)日：1993-04-28

    申请号：EP92118098.0

    申请日：1992-10-22

    申请人： HITACHI, LTD.

    发明人： Aoyama, Takashi ,  Hosoi, Kishu ,  Misawa, Yutaka ,  Kimoto, Koji ,  Isakozawa, Shigeto ,  Ueda, Kazuhiro

    IPC分类号： H01J37/20

    CPC分类号： H01J37/20

    摘要： In order to control the position of a specimen on a specimen holder with high accuracy, a specimen cartridge (1) is made of a good thermal conductor, an outer frame (5) is made of heat insulating material and a connecting rod is made of a poor thermal conductor. The temperature distribution of the specimen (2) becomes uniform and the temperature drift is reduced. Further, thermal expansion of a specimen cartridge tilting rod (3) does not affect the tilting angle. These features make it possible to perform various highly accurate observations and measurements with an electron microscope.

    摘要翻译： 为了以高精度控制样品在样品架上的位置，样品盒（1）由良好的导热体制成，外框（5）由绝热材料制成，连杆由 一个不好的导热体。 样品（2）的温度分布变得均匀，温度漂移降低。 此外，样品盒倾斜杆（3）的热膨胀不影响倾斜角度。 这些特征使得可以用电子显微镜执行各种高精度的观察和测量。

    Measurement method of layer thickness for thin film stacks
    3.
    发明公开
    Measurement method of layer thickness for thin film stacks 有权
    Verfahren zur Messung der Schichtdicke vonDünnfilmstapeln

    公开(公告)号：EP2080982A1

    公开(公告)日：2009-07-22

    申请号：EP08019869.0

    申请日：2008-11-13

    申请人： Hitachi Ltd.

    发明人： Ueda, Kazuhiro ,  Yoneyama, Akio

    IPC分类号： G01B15/02 ,  G01N23/20

    CPC分类号： G01B15/02 ,  G01N23/20075

    摘要： Provided is a thin film stack inspection method capable of accurately measuring and inspecting layer thicknesses of thin film stacks. An X-ray having a long coherence length is used as an incident X-ray and the X-ray specular-reflected from a sample placed on a goniometer is partially bent by a prism. The X-ray bent by the prism and the X-ray going straight are made to interfere with each other to obtain interference patterns. Though being thin film stacks, the sample has a portion having no thin film and thus an exposed substrate. The X-ray not bent by the prism includes an X-ray specular-reflected from the exposed substrate. By changing the incident angle from 0.01° to 1°, the interference patterns of the specular-reflected X-ray are measured. Thus, layer thicknesses are measured using a change in a phase of the X-ray reflected from a film stack interface.

    摘要翻译： 提供了能够精确地测量和检查薄膜叠层的层厚度的薄膜堆叠检查方法。 使用具有长相干长度的X射线作为入射X射线，并且从放置在测角器上的样品镜面反射的X射线被棱镜部分地弯曲。 由棱镜弯曲的X射线和X射线直线相互干涉以获得干涉图案。 虽然是薄膜堆叠，但是样品具有不具有薄膜的部分，因此具有暴露的基底。 由棱镜未弯曲的X射线包括从暴露的基底镜面反射的X射线。 通过将入射角从0.01°改为1°，测量镜面反射X射线的干涉图案。 因此，使用从膜堆叠界面反射的X射线的相位变化来测量层厚度。