利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

31 条记录 (耗时 0.054 秒)

    Electron microscope specimen holder
    2.
    发明公开
    Electron microscope specimen holder 失效
    ProbenhalterfürElektrodenmikroskop。

    公开(公告)号：EP0538861A1

    公开(公告)日：1993-04-28

    申请号：EP92118098.0

    申请日：1992-10-22

    申请人： HITACHI, LTD.

    发明人： Aoyama, Takashi ,  Hosoi, Kishu ,  Misawa, Yutaka ,  Kimoto, Koji ,  Isakozawa, Shigeto ,  Ueda, Kazuhiro

    IPC分类号： H01J37/20

    CPC分类号： H01J37/20

    摘要： In order to control the position of a specimen on a specimen holder with high accuracy, a specimen cartridge (1) is made of a good thermal conductor, an outer frame (5) is made of heat insulating material and a connecting rod is made of a poor thermal conductor. The temperature distribution of the specimen (2) becomes uniform and the temperature drift is reduced. Further, thermal expansion of a specimen cartridge tilting rod (3) does not affect the tilting angle. These features make it possible to perform various highly accurate observations and measurements with an electron microscope.

    摘要翻译： 为了以高精度控制样品在样品架上的位置，样品盒（1）由良好的导热体制成，外框（5）由绝热材料制成，连杆由 一个不好的导热体。 样品（2）的温度分布变得均匀，温度漂移降低。 此外，样品盒倾斜杆（3）的热膨胀不影响倾斜角度。 这些特征使得可以用电子显微镜执行各种高精度的观察和测量。

    Method and apparatus for forming an anti-reflection film for a cathode-ray tube
    3.
    发明公开
    Method and apparatus for forming an anti-reflection film for a cathode-ray tube 失效
    用于制造阴极射线管的防反射涂层的方法和装置。

    公开(公告)号：EP0533030A2

    公开(公告)日：1993-03-24

    申请号：EP92115338.3

    申请日：1992-09-08

    申请人： HITACHI, LTD.

    发明人： Oishi, Tomoji ,  Maekawa, Sachiko ,  Kato, Akira ,  Nishizawa, Masahiro ,  Tomita, Yoshifumi ,  Okude, Kojiro ,  Tochigi, Kenji ,  Misawa, Yutaka

    IPC分类号： H01J29/89 ,  G02B1/10

    CPC分类号： G02B1/11 ,  H01J29/896 ,  H01J2209/012

    摘要： An anti-reflection film (2) is produced on the panel surface of a cathode-ray tube (1) by:

    (A) preparing a solution (8) for forming an anti-reflection film (2), which contains water and an alkoxide having the formula,



            M(OR) n



    wherein M is Si or a metal selected from the group consisting of Ti, Al, Zr, Sn, In, Sb and Zn; R is an alkyl group having 1-10 carbon atoms; n is an integer of from 1 to 8; and when n is not 1, the alkyl groups represented by R may be the same or different,
    (B) coating the solution (8) for forming an anti-reflection film (2) on the outermost surface of the panel of a cathode-ray tube (1), and
    (C) applying an ultraviolet light (7) to the solution (8) for forming an anti-reflection film (2) coated on said surface to cure the solution to form a transparent film with fine roughness.

    This production method is carried out using an apparatus having:

    (a) a coating means (3) for coating the above solution (8) for forming an anti-reflection film (2) on the outermost surface of the panel of a cathode-ray tube (1),
    (b) a transferring means (4) for transferring the solution-coated cathode-ray tube (1), and
    (c) an ultraviolet light-applying means (7) for photocuring the solution (8) coated on the cathode-ray tube (1) during the transfer of the solution-coated cathode-ray tube.

    In the above method, when a silicon alkoxide is used as the metal alkoxide, there can be obtained a cathode-ray tube having an anti-reflection film made of alkali-free silica on the outermost surface of the panel, said anti-reflection film giving a ratio of Si-O-Si peak intensity to Si-OH peak intensity of 4 or more when measured for infrared spectrum.
    Further embodiments include an antistatic layer and the inclusion of an organic dye into the anti-reflection film.

    摘要翻译： 的防反射膜 - （2）的阴极射线管（1）通过的面板表面上产生：（A）用于防反射成膜的形成制备溶液（8）（2），其包含水和在 具有下式的醇盐，M（OR）n其中M为Si或选自钛，铝，锆，锡，在，Sb和Zn中选择的金属; R是具有1-10个碳原子的烷基; n是从1至8的整数; 且当n不为1，由R表示的烷基可以是涂布溶液（8）相同或不同，（B）为一个cathode-的面板的最外表面上的防反射膜 - （2）的形成 射线管（1），和（C）施加到紫外光（7）到该溶液中（8），用于防反射膜的形成（2）涂覆在所述表面上以固化该溶液，以形成的透明膜，与微细的凹凸。 该制造方法是使用在装置具有：（a）一种涂层装置（3）用于为阴极射线的面板的最外表面上的防反射膜 - （2）的形成（8）涂布上述溶液 （1），（b）一种传递环装置（4），用于传递环的溶液涂覆的阴极射线管（1），以及（c）紫外线光施加装置（7），用于光固化的溶液（8）涂布在管 溶液涂覆的阴极射线管的传输过程中的阴极射线管（1）。 在上述方法中，当硅醇盐用作金属醇盐，也可以得到具有上防反射膜制成的面板的最外表面上的游离碱的二氧化硅，所述防反射的阴极射线管成膜 给出的Si-O-Si峰强度的4个或更多的Si-OH峰强度之比。当测定红外光谱。 其它实施方案包括在抗静电层并且包括有机染料的成抗反射成膜。

    Resin-molded semiconductor devices and a process for manufacturing the same
    5.
    发明公开
    Resin-molded semiconductor devices and a process for manufacturing the same 失效
    Harzgekapselte Halbleiteranordnungen und ein Verfahren zum Herstellen derselben。

    公开(公告)号：EP0111932A2

    公开(公告)日：1984-06-27

    申请号：EP83112853.3

    申请日：1983-12-20

    申请人： HITACHI, LTD.

    发明人： Hidaka, Toshiyuki ,  Sakamoto, Hisashi ,  Fukuhara, Toshiaki ,  Fujieda, Sadao ,  Misawa, Yutaka

    IPC分类号： H01L21/56 ,  H01L23/30

    CPC分类号： H01L21/56 ,  H01L23/293 ,  H01L23/3107 ,  H01L23/3135 ,  H01L23/3171 ,  H01L2924/0002 ,  Y10T29/49171 ,  H01L2924/00

    摘要： The invention relates to resin-molded axial lead-type semiconductor devices comprising a sub-assembly consisting of a semiconductor pellet (1) brazed between a pair of axial leads (5). The sub-assembly is sealed in an epoxy resin, which is formed by applying an epoxy resin, preferably a one-can-epoxy resin, onto the sub-assembly followed by curing the epoxy resin. Preferably, an epoxy resin having a thixotropic index of 1.0 to 2.5 and a gelation time 0.8 to 3 minutes is used.
    The invention further relates to a process for manufacturing these semiconductor devices which is characterised by:

    (A) horizontally holding the sub-assembly and dropping a predetermined amount of an epoxy resin onto the semiconductor pellet while turning the sub-assembly with the axial leads as rotation axis,
    (B) curing the epoxy resin, preferably by heating at 160° to 180°C for a period of 2 to 10 min, while turning the sub-assembly, so that the surface portions of the epoxy resin are cured, and
    (C) curing the epoxy resin, preferably by heating at 160° to 200°C for a period of 3 to 24 h while maintaining the sub-assembly stationary without turning it, so that the epoxy resin is completely hardened.

    摘要翻译： 本发明涉及树脂模制的轴向引线型半导体器件，其包括由钎焊在一对轴向引线（5）之间的半导体芯片（1）组成的子组件。 该子组件被密封在环氧树脂中，环氧树脂通过将环氧树脂（优选一罐环氧树脂）施加到子组件上，随后固化环氧树脂而形成。 优选使用触变指数为1.0〜2.5，凝胶化时间为0.8〜3分钟的环氧树脂。 本发明还涉及一种制造这些半导体器件的方法，其特征在于：（A）水平保持子组件并将预定量的环氧树脂滴落到半导体芯片上， 装配轴向引线作为旋转轴，...（B）固化环氧树脂，优选在160°至180°加热2至10分钟的时间，同时转动子组件，使表面部分 环氧树脂固化，（C）固化环氧树脂，优选在160〜200℃下加热3〜24小时，同时保持组件不转动，使环氧树脂成为 完全硬化。

    An analytical electron microscope and a method of operating such an electron microscope
    7.
    发明公开
    An analytical electron microscope and a method of operating such an electron microscope 失效
    Elektronenmikroskop zur分析和Verfahren zur dessen Betrieb。

    公开(公告)号：EP0584923A1

    公开(公告)日：1994-03-02

    申请号：EP93305522.0

    申请日：1993-07-14

    申请人： HITACHI, LTD.

    发明人： Aoyama, Takashi ,  Misawa, Yutaka

    IPC分类号： H01J37/26 ,  H01J37/252

    CPC分类号： H01J37/252 ,  H01J37/265

    摘要： An analytical electron microscope automatically identifies objects in a sample (31) on the basis of shape of the object, change of thickness of the object and/or change of element (such as change of element type or concentration). Therefore, the operator of the analytical electron microscope can specify a desired object, and an example or examples of that object in a sample can be identified automatically. The characteristics need to identify the object are determined by detecting the effect of the sample on the electron beam (32) of the analytical electron microscope, using, for example, an energy dispersive type X-ray analyzer (75) and an electron energy loss spectrometer (74). Once an example of the object has been identified, it may be analyzed further. The analytical electron microscope may also analyze a sample (31) to identify and classify the objects present.

    摘要翻译： 分析电子显微镜根据物体的形状，物体的厚度变化和/或元素的变化（例如元件类型或浓度的变化）自动识别样品（31）中的物体。 因此，分析电子显微镜的操作者可以指定期望的对象，并且可以自动识别样品中的该对象的示例或示例。 通过使用例如能量色散型X射线分析仪（75）和电子能量损失检测样品对分析电子显微镜的电子束（32）的影响来确定物体的特征 光谱仪（74）。 一旦已经确定了对象的示例，则可以进一步分析对象。 分析电子显微镜还可以分析样品（31）以识别和分类存在的物体。