Electron beam apparatus
    2.
    发明公开
    Electron beam apparatus 失效
    Elektronenstrahlgerät

    公开(公告)号:EP0810629A1

    公开(公告)日:1997-12-03

    申请号:EP97112851.7

    申请日:1992-11-25

    IPC分类号: H01J37/28 H01J37/02

    摘要: An electron beam apparatus comprises an electron beam source, a unit for irradiating an electron beam (6) on a specimen (12), a detector (30) for secondary electrons, an electrode (7) for generating an electric field sufficient to draw out secondary electrons in a recess in the specimen from the recess, and a unit (2) for generating a magnetic field for focusing secondary electrons drawn out of the recess. With this construction, the secondary electrons drawn out of the recess by the electric field reach the detector without being attracted by the electrode. By adopting this construction, a contact hole of high aspect ratio formed in a semiconductor device and having a small diameter and a large depth can be observed.

    摘要翻译: 电子束装置包括电子束源,用于照射试样(12)上的电子束(6)的单元,用于二次电子的检测器(30),用于产生足以引出的电场的电极(7) 来自凹部的试样中的凹部中的二次电子和用于产生用于聚焦从凹部拉出的二次电子的磁场的单元(2)。 利用这种结构,通过电场从凹槽中引出的二次电子到达检测器而不被电极吸引。 通过采用这种结构,可以观察到形成在半导体器件中并具有小直径和大深度的高纵横比的接触孔。

    Electron beam apparatus
    3.
    发明公开
    Electron beam apparatus 失效
    Elektronenstrahlgerät

    公开(公告)号:EP0949653A2

    公开(公告)日:1999-10-13

    申请号:EP99111213.7

    申请日:1992-11-25

    IPC分类号: H01J37/28

    摘要: An observation method of an electron beam apparatus for obtaining a scanning image of a desired region by detecting electron generated from said desired region with a detector as a result of scanning electron beam in a desired region of a specimen surface comprises the steps of scanning electron beam in a specimen region including contact hole or a deep groove, returning back at least a part of secondary electron within electron generated in said scanning region to said specimen side by applying a negative voltage at grid electrode disposed between said specimen and said detector, and detecting a reflecting electron and said secondary electron of a higher energy among electron generated from said scanning region with said detector, whereby obtaining a specimen image including said contact hole or deep groove.

    摘要翻译: 电子束装置的观察方法,用于通过用检测器检测从所述期望区域产生的电子来获得所需区域的扫描图像,该方法是在试样表面的所需区域中扫描电子束的结果包括以下步骤:扫描电子束 在包括接触孔或深沟槽的样本区域中,通过在设置在所述检体和所述检测器之间的栅电极施加负电压,将在所述扫描区域产生的电子中的二次电子的至少一部分返回到所述检体侧, 反射电子和所述二次电子在由所述扫描区域与所述检测器产生的电子之间具有较高的能量,从而获得包括所述接触孔或深槽的样本图像。

    Electron beam apparatus
    5.
    发明公开
    Electron beam apparatus 失效
    Elektronenstrahlgerät。

    公开(公告)号:EP0548573A2

    公开(公告)日:1993-06-30

    申请号:EP92120110.9

    申请日:1992-11-25

    IPC分类号: H01J37/28

    摘要: An electron beam apparatus comprises an electron beam source, a unit for irradiating an electron beam (6) on a specimen (12), a detector (30) for secondary electrons, an electrode (7) for generating an electric field sufficient to draw out secondary electrons in a recess in the specimen from the recess, and a unit (2) for generating a magnetic field for focusing secondary electrons drawn out of the recess. With this construction, the secondary electrons drawn out of the recess by the electric field reach the detector without being attracted by the electrode. By adopting this construction, a contact hole of high aspect ratio formed in a semiconductor device and having a small diameter and a large depth can be observed.

    摘要翻译: 电子束装置包括电子束源,用于照射试样(12)上的电子束(6)的单元,用于二次电子的检测器(30),用于产生足以引出的电场的电极(7) 来自凹部的试样中的凹部中的二次电子和用于产生用于聚焦从凹部拉出的二次电子的磁场的单元(2)。 利用这种结构,通过电场从凹槽中引出的二次电子到达检测器而不被电极吸引。 通过采用这种结构,可以观察到形成在半导体器件中并具有小直径和大深度的高纵横比的接触孔。

    Electron beam apparatus
    6.
    发明公开
    Electron beam apparatus 失效
    电子束装置

    公开(公告)号:EP0949653A3

    公开(公告)日:2005-12-21

    申请号:EP99111213.7

    申请日:1992-11-25

    IPC分类号: H01J37/28

    摘要: An observation method of an electron beam apparatus for obtaining a scanning image of a desired region by detecting electron generated from said desired region with a detector as a result of scanning electron beam in a desired region of a specimen surface comprises the steps of scanning electron beam in a specimen region including contact hole or a deep groove, returning back at least a part of secondary electron within electron generated in said scanning region to said specimen side by applying a negative voltage at grid electrode disposed between said specimen and said detector, and detecting a reflecting electron and said secondary electron of a higher energy among electron generated from said scanning region with said detector, whereby obtaining a specimen image including said contact hole or deep groove.

    摘要翻译: 一种电子束设备的观察方法,用于通过在样本表面的期望区域中扫描电子束来检测由所述期望区域产生的电子,从而获得期望区域的扫描图像的方法包括以下步骤:扫描电子束 在包括接触孔或深槽的样本区域中,通过在设置在所述样本和所述检测器之间的栅格电极上施加负电压,使所述扫描区域中产生的电子内的至少一部分二次电子返回到所述样本侧, 从所述扫描区域用所述检测器产生的电子中的反射电子和具有较高能量的所述二次电子,由此获得包括所述接触孔或深槽的样本图像。

    Electron beam apparatus
    8.
    发明公开
    Electron beam apparatus 失效
    电子束装置

    公开(公告)号:EP0548573A3

    公开(公告)日:1994-03-09

    申请号:EP92120110.9

    申请日:1992-11-25

    IPC分类号: H01J37/28

    摘要: An electron beam apparatus comprises an electron beam source, a unit for irradiating an electron beam (6) on a specimen (12), a detector (30) for secondary electrons, an electrode (7) for generating an electric field sufficient to draw out secondary electrons in a recess in the specimen from the recess, and a unit (2) for generating a magnetic field for focusing secondary electrons drawn out of the recess. With this construction, the secondary electrons drawn out of the recess by the electric field reach the detector without being attracted by the electrode. By adopting this construction, a contact hole of high aspect ratio formed in a semiconductor device and having a small diameter and a large depth can be observed.

    摘要翻译: 电子束装置包括电子束源,用于在样本(12)上照射电子束(6)的单元,用于二次电子的检测器(30),用于产生足以抽出的电场的电极(7) 二次电子从凹槽中进入试样的凹槽中;以及一个单元(2),用于产生磁场以聚集从凹槽中引出的二次电子。 利用这种结构,通过电场从凹槽中抽出的二次电子到达检测器而不被电极吸引。 通过采用这种结构,可以观察到在半导体器件中形成的具有高直径比并且具有小直径和大深度的接触孔。