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1.发明公开
公开(公告)号：EP1150341A4
公开(公告)日：2005-06-08
申请号：EP99961474
申请日：1999-12-28
发明人： UCHIDA TAKESHI , HOSHINO TETSUYA , TERAZAKI HIROKI , KAMIGATA YASUO , KOYAMA NAOYUKI , HONMA YOSHIO , KONDOH SEIICHI
IPC分类号： B24B37/00 , C09G1/02 , C09K13/00 , C23F3/00 , H01L21/321
摘要： A polishing liquid comprising an oxidizing agent, an etching agent for an oxidized metal, an agent capable of forming a protection film, an agent for assisting the dissolution of said agent capable of forming a protection film, a method for preparing the polishing liquid and a polishing method using the liquid. Also provided are materials for a polishing liquid for a metal including an etching agent for an oxidized metal, an agent capable of forming a protection film, and an agent for assisting the dissolution of said agent capable of forming a protection film.
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公开(公告)号：EP2535378A4
公开(公告)日：2015-09-02
申请号：EP11742287
申请日：2011-02-10
发明人： KOBUNE MIKA , KOYAMA NAOYUKI , GOTOU AKIHITO , KIKUCHI IKUKO , SUKEGAWA TOMOFUMI
CPC分类号： C08L97/005 , C08G18/6492 , C08G18/73 , C08G59/621 , C08H6/00 , C08H8/00 , C08L63/00 , C08L97/00
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公开(公告)号：EP1796152A4
公开(公告)日：2008-12-03
申请号：EP05766424
申请日：2005-07-20
发明人： FUKASAWA MASATO , KOYAMA NAOYUKI , KURATA YASUSHI , HAGA KOUJI , AKUTSU TOSHIAKI , OOTSUKI YUUTO
IPC分类号： H01L21/3105 , B24B37/00 , C09G1/02 , C09K3/14 , H01L21/304
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463
摘要： The present invention relates to a CMP polishing slurry comprising cerium oxide particles, a dispersant, a water-soluble polymer and water, wherein the water-soluble polymer is a polymer obtained in polymerization of a monomer containing at least one of a carboxylic acid having an unsaturated double bond and the salt thereof by using at least one of a cationic azo compound and the salt thereof as a polymerization initiator. The present invention provides a polishing slurry and a polishing method allowing polishing efficiently uniformly at high speed without scratch and also allowing easy process management in the CMP technology of smoothening an interlayer dielectric film, BPSG film, and insulation film for shallow trench isolation.
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公开(公告)号：EP1369906A4
公开(公告)日：2009-07-15
申请号：EP02700629
申请日：2002-02-20
IPC分类号： B24B37/00 , C09G1/02 , C09K3/14 , H01L21/304 , H01L21/3105
CPC分类号： C09K3/1454 , C01F17/0043 , C01G25/00 , C01P2004/62 , C01P2004/64 , C01P2006/10 , C01P2006/12 , C09G1/02 , C09K3/1436 , C09K3/1463 , H01L21/31053
摘要： A polishing compound containing particles and a medium in which at least a part of the particles are dispersed, wherein the particles comprise at least one of (1) a cerium compound being selected from among a cerium oxide, a cerium halide and cerium sulfide and having a density of 3 to 6 g/cm3 and an average particle diameter of secondary particles of 1 to 300 nm and (2) a hydroxide of a tetravalent metal; and a method for polishing a substrate using the polishing compound. The method performs a polishing through utilizing the chemical action of particles in the polishing compound to the full and minimizing the mechanical action thereof, which leads to achievement of the compatibility of the reduction of flaws in finishing and the improvement of finishing removal rate, and thus can be suitably used in CMP technology for flattening the surface of a substrate in a process for manufacturing a semiconductor element.
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5.发明公开ABRASIVE COMPOUND FOR CMP, METHOD FOR POLISHING SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME, AND ADDITIVE FOR CMP ABRASIVE COMPOUND 有权研磨剂CMP，法，基板波兰语和方法用于加工半导体安排使用相同的，CMP SCHLEIFMITTEL除了一
公开(公告)号：EP1205965A4
公开(公告)日：2002-10-24
申请号：EP00937240
申请日：2000-06-15
发明人： KOYAMA NAOYUKI , HAGA KOUJI , YOSHIDA MASATO , HIRAI KEIZOU , ASHIZAWA TORANOSUKE , MACHII YOUITI
IPC分类号： B24B37/00 , C09G1/02 , C09K3/14 , H01L21/306 , H01L21/304
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1409 , C09K3/1463 , H01L21/30625
摘要： An abrasive compound for CMP, characterized as comprising cerium oxide particles, a dispersant, an organic polymer containing an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on the surface of a film to be polished, and water; a method for polishing a substrate, characterized in that it comprises pressing a substrate having, formed thereon, a film to be polished to an abrasive surface plate and an abrasive cloth, and moving the substrate and the abrasive surface plate, while feeding the above CMP abrasive compound to between the abrasive cloth and the film to be polished; a method for manufacturing a semiconductor device characterized as comprising a step practicing the above method for polishing; and an additive for a CMP abrasive compound, characterized as comprising water and an organic polymer containing an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on the surface of a film to be polished.
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