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公开(公告)号：EP0500234B1
公开(公告)日：1997-10-01
申请号：EP92300996.3
申请日：1992-02-06
申请人： HONEYWELL INC.
发明人： Hocker, Benjamin G. , Ikinwande, Akintunde I. , Burns, David W. , Horning, Robert D. , Mirza, Amir R. , Saathoff, Diedrich J. , Stratton, Thomas G. , Carney, James K.
CPC分类号： B81C1/00182 , B81B2201/0292 , B81B2203/0127 , G01L9/0042 , G01L9/0073 , H01L21/2007
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2.发明公开Method for making diaphragm-based sensors and apparatus constructed therewith 失效Verfahren zur Herstellung vonMembranmessfühlernund somit hergestellte Apparate
公开(公告)号：EP0756164A2
公开(公告)日：1997-01-29
申请号：EP96115964.7
申请日：1992-02-06
申请人： HONEYWELL INC.
发明人： Hocker, G. Benjamin , Burns, David W. , Ikinwande, Akintunde I. , Horning, Robert D. , Mirza, Amir R. , Stratton, Thomas G. , Saathoff, Diedrich J. , Carney, James K.
CPC分类号： B81C1/00182 , B81B2201/0292 , B81B2203/0127 , G01L9/0042 , G01L9/0073 , H01L21/2007
摘要： A diaphragm transducer 201 is manufactured by forming cavities in a diaphragm layer which are backfilled with a material readily removed by etching. The diaphragm layer is bonded to a silicon wafer. Access passages are provided to enable removal of the backfill material.
The transducer 201 is incorporated in a three-wafer capacitive sensor 4 bonded to a pressure tube 5 with pressure ports 204 and 205 leading to access pressure ports 206.摘要翻译： 通过在隔膜层（58）中形成空腔来制造隔膜传感器（201），该膜片通过蚀刻容易地去除的材料回填。 隔膜层（58）与硅晶片（40）接合。 提供通道（85,86）以便能够移除回填材料。 传感器（201）被结合到三压晶片传感器中，该三晶片传感器通过压力端口（85）和（86）连接到压力管（75），导通通路压力端口（101b，101d）。
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3.发明公开Method for making diaphragm-based sensors and apparatus constructed therewith 失效一种用于隔膜的传感器的制备方法以及由此制备的器件的工艺
公开(公告)号：EP1098181A3
公开(公告)日：2001-08-01
申请号：EP01200463.6
申请日：1992-02-06
申请人： HONEYWELL INC.
发明人： Mirza, Amir R. , Stratton, Thomas G. , Saathoff, Diedrich J. , Carney, James K. , Hocker, Benjamin G. , Burns, David W. , Akinwande, Akintunde I. , Horning, Robert D.
IPC分类号： G01L9/00 , H01L21/32 , H01L21/762
CPC分类号： B81C1/00182 , B81B2201/0292 , B81B2203/0127 , G01L9/0042 , G01L9/0073 , H01L21/2007
摘要： A diaphragm transducer 201 is manufactured by forming cavities in a diaphragm layer which are backfilled with a material readily removed by etching. The diaphragm layer is bonded to a silicon wafer. Access passages are provided to enable removal of the backfill material. The transducer 201 is incorporated in a three-wafer capacitive sensor 4 bonded to a pressure tube 5 with pressure ports 204 and 205 leading to access pressure ports 206.
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4.发明公开Method for making diaphragm-based sensors and apparatus constructed therewith 失效一种用于隔膜的传感器的制备方法以及由此制备的器件的工艺
公开(公告)号：EP1098181A2
公开(公告)日：2001-05-09
申请号：EP01200463.6
申请日：1992-02-06
申请人： HONEYWELL INC.
发明人： Mirza, Amir R. , Stratton, Thomas G. , Saathoff, Diedrich J. , Carney, James K. , Hocker, Benjamin G. , Burns, David W. , Ikinwande, Akintunde I. , Horning, Robert D.
IPC分类号： G01L9/00 , H01L21/32 , H01L21/762
CPC分类号： B81C1/00182 , B81B2201/0292 , B81B2203/0127 , G01L9/0042 , G01L9/0073 , H01L21/2007
摘要： A diaphragm transducer 201 is manufactured by forming cavities in a diaphragm layer which are backfilled with a material readily removed by etching. The diaphragm layer is bonded to a silicon wafer. Access passages are provided to enable removal of the backfill material.
The transducer 201 is incorporated in a three-wafer capacitive sensor 4 bonded to a pressure tube 5 with pressure ports 204 and 205 leading to access pressure ports 206.摘要翻译： 膜片换能器201是由在其中回填通过蚀刻容易地除去的材料的膜片层中形成的空腔来制造。 隔膜层结合到一个硅晶片。 提供访问通道，使去除回填材料。 换能器201在接合到压力管5与压力端口204和205，通往压力端口的三晶片电容式传感器4被合并206
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5.发明公开Method for making diaphragm-based sensors and apparatus constructed therewith 失效如此制备一种用于生产膜的传感器和设备的过程
公开(公告)号：EP0756164A3
公开(公告)日：1997-06-04
申请号：EP96115964.7
申请日：1992-02-06
申请人： HONEYWELL INC.
发明人： Hocker, G. Benjamin , Burns, David W. , Ikinwande, Akintunde I. , Horning, Robert D. , Mirza, Amir R. , Stratton, Thomas G. , Saathoff, Diedrich J. , Carney, James K.
CPC分类号： B81C1/00182 , B81B2201/0292 , B81B2203/0127 , G01L9/0042 , G01L9/0073 , H01L21/2007
摘要： A diaphragm transducer 201 is manufactured by forming cavities in a diaphragm layer which are backfilled with a material readily removed by etching. The diaphragm layer is bonded to a silicon wafer. Access passages are provided to enable removal of the backfill material. The transducer 201 is incorporated in a three-wafer capacitive sensor 4 bonded to a pressure tube 5 with pressure ports 204 and 205 leading to access pressure ports 206.
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6.发明公开Method for making diaphragm-based sensors and apparatus constructed therewith 失效制造基于膜片的传感器的方法及其构造的装置
公开(公告)号：EP0500234A3
公开(公告)日：1993-03-24
申请号：EP92300996.3
申请日：1992-02-06
申请人： HONEYWELL INC.
发明人： Hocker, Benjamin G. , Ikinwande, Akintunde I. , Burns, David W. , Horning, Robert D. , Mirza, Amir R. , Saathoff, Diedrich J. , Stratton, Thomas G. , Carney, James K.
CPC分类号： B81C1/00182 , B81B2201/0292 , B81B2203/0127 , G01L9/0042 , G01L9/0073 , H01L21/2007
摘要： A diaphragm transducer 201 is manufactured by forming cavities in a diaphragm layer which are backfilled with a material readily removed by etching. The diaphragm layer is bonded to a silicon wafer. Access passages are provided to enable removal of the backfill material. The transducer 201 is incorporated in a three-wafer capacitive sensor 4 bonded to a pressure tube 5 with pressure ports 204 and 205 leading to access pressure ports 206.
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7.发明公开Method for making diaphragm-based sensors and apparatus constructed therewith 失效Verfahren zur Herstellung vonMembranmessfühlernund somit hergestellte Apparate。
公开(公告)号：EP0500234A2
公开(公告)日：1992-08-26
申请号：EP92300996.3
申请日：1992-02-06
申请人： HONEYWELL INC.
发明人： Hocker, Benjamin G. , Ikinwande, Akintunde I. , Burns, David W. , Horning, Robert D. , Mirza, Amir R. , Saathoff, Diedrich J. , Stratton, Thomas G. , Carney, James K.
CPC分类号： B81C1/00182 , B81B2201/0292 , B81B2203/0127 , G01L9/0042 , G01L9/0073 , H01L21/2007
摘要： A diaphragm transducer 201 is manufactured by forming cavities in a diaphragm layer which are backfilled with a material readily removed by etching. The diaphragm layer is bonded to a silicon wafer. Access passages are provided to enable removal of the backfill material.
The transducer 201 is incorporated in a three-wafer capacitive sensor 4 bonded to a pressure tube 5 with pressure ports 204 and 205 leading to access pressure ports 206.摘要翻译： 膜片传感器201通过在隔膜层中形成空腔来制造，该隔膜层通过蚀刻容易地去除的材料回填。 隔膜层结合到硅晶片。 提供通道以便能够移除回填材料。 换能器201结合在三压电容传感器4中，该三晶片电容式传感器4结合到压力管5，压力端口204和205通向压力端口206。
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