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公开(公告)号：EP1700003B1
公开(公告)日：2013-08-14
申请号：EP04794910.2
申请日：2004-10-13
CPC分类号： E21B36/003 , E21B47/011 , H01L23/34 , H01L2924/0002 , H05K1/0212 , H01L2924/00
摘要： Methods and systems for operating integrated circuits at temperatures higher than expected ambient temperatures. The heating may be of entire circuit boards, portions of the circuit boards (such as the components within a multiple-chip module) and/or single devices. Methods and related systems may be used in any high temperature environment such as downhole logging tools, and the devices so heated are preferably of silicon on insulator semiconductor technology.
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公开(公告)号：EP1381921A1
公开(公告)日：2004-01-21
申请号：EP01274015.5
申请日：2001-03-21
CPC分类号： G05B13/027 , E21B43/00 , E21B2041/0028
摘要： A method of optimizing performance of a well system utilizes a neural network. In a described embodiment, the method includes the step of accumulating data indicative of the performance of the well system in response to variable influencing parameters. The data is used to train a neural network to model an output of the well system in response to the influencing parameters. An output of the neural network may then be input to a valuing model, e.g., to permit optimization of a value of the well system. The optimization process yields a set of prospective influencing parameters which may be incorporated into the well system to maximize its value.
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公开(公告)号：EP1330609B1
公开(公告)日：2008-05-21
申请号：EP00978303.6
申请日：2000-10-31
IPC分类号： F15B15/18
摘要： Electrohydraulic actuators and associated methods are utilized to control the operation of downhole well tool assemblies, representatively flow control devices. In the described embodiment thereof, each actuator (36) is positioned downhole and comprises a self-contained, closed circuit hydraulic system including an electrically operable double action primary pump (58) drivingly coupled to an associated well tool assembly (36) via a first hydraulic circuit, and an electrically operable switching pump (60) coupled to the first hydraulic circuit via a second hydraulic circuit interposed therein and operative to selectively alter the control flow of hydraulic fluid to the well tool assembly in a manner reversing its operation. To provide for selective, more rapid control of the well tool assembly, a chargeable accumulator (108) is connected to the hydraulic circuitry and is selectively and drivably communicatable with the well tool assembly.
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公开(公告)号：EP1687837A2
公开(公告)日：2006-08-09
申请号：EP04817851.1
申请日：2004-11-18
发明人： RODNEY, Paul, F. , MASINO, James, E. , GOLLA, Christopher, A. , SCHULTZ, Roger, L. , FREEMAN, James, J.
IPC分类号： H01L21/00
CPC分类号： E21B47/0002 , B81B2207/115 , E21B47/011 , G01V1/40 , H01L21/86 , H01L23/3157 , H01L27/12 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/73253 , H01L2924/13091 , H01L2924/3011 , H01L2924/00
摘要： A tool comprising a tool body (26) and tool electronics located within the tool body, wherein the tool electronics (916) are operable to sense a tool component characteristic indicative of tool performance such as temperature, acceleration, pressure, rotation, strain or vibration. At least some of the tool electronics are operable, at least for one week, when exposed to temperatures of at least 200 Celsius. The tool electronics may be integrated circuits formed on a silicon carbide substrate (602, 702) or a silicon on sapphire substrate (602, 702). One illustrative embodiment of the tool is a drill bit for employment in a high temperature drill well.
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公开(公告)号：EP1383984B1
公开(公告)日：2005-02-16
申请号：EP01954924.5
申请日：2001-07-24
CPC分类号： H01M2/1264 , E21B41/0085 , H01M2/12 , H01M6/08 , H01M6/26 , H01M6/42 , H01M6/50 , H01M2200/20
摘要： A downhole electrical power system comprising an electrical power-consuming well tool (14) interconnected in a tubular string, and a power source (12), providing the well tool (14) with electrical power, the power source (12) including at least one voltaic cell (32, 34) having an anode (36) and a cathode (38), each of the anode and the cathode being exposed to an electrolyte (40).
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公开(公告)号：EP1383984A1
公开(公告)日：2004-01-28
申请号：EP01954924.5
申请日：2001-07-24
CPC分类号： H01M2/1264 , E21B41/0085 , H01M2/12 , H01M6/08 , H01M6/26 , H01M6/42 , H01M6/50 , H01M2200/20
摘要： A downhole electrical power system comprising an electrical power-consuming well tool (14) interconnected in a tubular string, and a power source (12), providing the well tool (14) with electrical power, the power source (12) including at least one voltaic cell (32, 34) having an anode (36) and a cathode (38), each of the anode and the cathode being exposed to an electrolyte (40).
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公开(公告)号：EP1269149A1
公开(公告)日：2003-01-02
申请号：EP01929015.4
申请日：2001-03-26
发明人： PROETT, Mark, A. , PELLETIER, Michael, T. , HAN, Wei , STORM, Bruce, H., Jr. , SCHULTZ, Roger, L.
CPC分类号： E21B47/06 , E21B47/00 , E21B49/08 , E21B2049/085 , G01N11/08
摘要： A downhole tool and method for determining the viscosity of a reservoir fluid, the tool including a passage having entry, intermediate and exit regions, in which the reservoir fluid flowing through the passage will have a lower Reynolds number in the intermediate region as compared to the entry region, the tool also including differential pressure gauge for measuring the differential pressure across the intermediate region, and either a velocity controller or fluid velocity meter, for either setting or measuring the fluid velocity.
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公开(公告)号：EP1687899A2
公开(公告)日：2006-08-09
申请号：EP04811462.3
申请日：2004-11-18
IPC分类号： H03K17/615
CPC分类号： H01L29/78615 , H01L29/6678 , H01L29/78621 , H01L29/78657
摘要： High-voltage transistors, charge pumps, voltage level shifters, and method for fabricating the same are disclosed. The high-voltage transistor includes a substrate that includes sapphire or diamond and an active layer disposed on the substrate. The active layer includes a drain region, a source region, a channel region, and a lightly-doped drain region between the channel region and the drain region.
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公开(公告)号：EP1687838A2
公开(公告)日：2006-08-09
申请号：EP04817852.9
申请日：2004-11-18
IPC分类号： H01L21/00 , H01L21/8242
CPC分类号： H01L27/101 , H01L21/8213 , H01L21/8252 , H01L21/84 , H01L21/86 , H01L27/11502 , H01L27/12 , H01L27/228 , H01L2224/16 , H01L2924/13091 , H01L2924/16152 , H01L2924/00
摘要： Disclosed herein are various nonvolatile integrated device embodiments suitable for use at high temperatures. In some embodiments, a high temperature nonvolatile integrated device comprises a sapphire or spinel substrate having multiple ferroelectric memory cells disposed upon it. In other embodiments, a high temperature nonvolatile integrated device comprises a silicon on insulator substrate or a large bandgap semiconductor substrate having multiple ferroelectric or magnetic memory cells disposed on it. In yet other embodiments, a high temperature nonvolatile integrated device comprises a sapphire, silicon on insulator, or a large bandgap substrate having programmable read only memory (PROM) cells or electrically erasable PROM (EEPROM) cells disposed on it.
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公开(公告)号：EP1685597A2
公开(公告)日：2006-08-02
申请号：EP04811598.4
申请日：2004-11-18
IPC分类号： H01L27/01 , H01L27/12 , H01L31/0392 , G06F17/50
CPC分类号： H01L29/78615 , H01L29/6678 , H01L29/78621 , H01L29/78657
摘要： Semiconductor devices, logic devices, libraries to represent logic devices, and methods for designing and fabricating the same are disclosed. The semiconductor devices include a substrate comprising sapphire or diamond, an active layer disposed on the substrate, the active layer having a thickness tSi and comprising a channel region having a length L, where L/tSi is above 7 and an oxide layer disposed on the active layer.
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