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公开(公告)号：EP0805477B1
公开(公告)日：2004-07-14
申请号：EP97303049.7
申请日：1997-05-02
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公开(公告)号：EP0820089A1
公开(公告)日：1998-01-21
申请号：EP97305300.2
申请日：1997-07-16
发明人： Suyama, Motohiro , Kimura, Suenori , Asakura, Norio , Hirano, Ken , Kawai, Yoshihiko , Hasegawa, Yutaka , Morita, Tetsuya
IPC分类号： H01J43/28
CPC分类号： H01J43/28
摘要： The present invention relates to an electron tube comprising, at least, a cathode electrode and a face plate having a photocathode which are arranged at one end of a body, and a stem arranged at the other end of the body for defining the position of an electron entrance surface where the electron emitted from the photocathode reaches. The object of the present invention is to provide an electron tube which can reduce its size and has a structure for improving the workability in its assembling process. In particular, the electron tube in accordance with the present invention comprises a bonding ring, provided between the face plate and the cathode electrode, for bonding the face plate and the cathode electrode together. The bonding ring is made of a metal material selected from the group consisting of In, Au, Pb, alloys containing In, and alloys containing Pb.
摘要翻译： 本发明涉及一种电子管，该电子管至少包括阴极电极和具有布置在主体一端的光电阴极的面板以及布置在主体另一端的用于限定 电子入射面，光电阴极发射的电子到达。 本发明的目的是提供一种能够减小其尺寸的电子管，并且具有用于改善组装过程中的可加工性的结构。 特别地，根据本发明的电子管包括设置在面板和阴极之间的接合环，用于将面板和阴极接合在一起。 接合环由选自In，Au，Pb，含有In的合金和含有Pb的合金的金属材料构成。
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3.发明授权Target for X-ray generation, X-ray generator, and method for producing target for X-ray generation 有权靶的X射线产生，X射线发生器和处理用于这样的靶的制备
公开(公告)号：EP2618360B1
公开(公告)日：2014-11-19
申请号：EP13002045.6
申请日：2010-09-01
IPC分类号： H01J35/12
CPC分类号： H01J35/12 , H01J2235/081 , H01J2235/083 , H01J2235/087 , H01J2235/1204 , H01J2235/1291
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公开(公告)号：EP0714117B1
公开(公告)日：2002-02-06
申请号：EP95308117.1
申请日：1995-11-14
CPC分类号： H01L31/1075 , H01J43/04 , H01J43/12
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公开(公告)号：EP0805477A3
公开(公告)日：1999-08-25
申请号：EP97303049.7
申请日：1997-05-02
摘要： This invention relates to an electron tube having a structure for enabling a stable operation for a long time. In the electron tube, at least a confining mechanism (60,61) is arranged between a photocathode (22) and the electron incident surface of a semiconductor device (40), which are arranged to oppose each other through a container. Particularly, the area of the opening of the confining mechanism is smaller than that of the electron incident surface, thereby confining the orbits of photoelectrons from the photocathode. This structure avoids bombardment of electrons arriving at portions other than the electron incident surface of the semiconductor device and prevents the semiconductor device from being unnecessarily charged.
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公开(公告)号：EP0805477A2
公开(公告)日：1997-11-05
申请号：EP97303049.7
申请日：1997-05-02
摘要： This invention relates to an electron tube having a structure for enabling a stable operation for a long time. In the electron tube, at least a confining mechanism (60,61) is arranged between a photocathode (22) and the electron incident surface of a semiconductor device (40), which are arranged to oppose each other through a container. Particularly, the area of the opening of the confining mechanism is smaller than that of the electron incident surface, thereby confining the orbits of photoelectrons from the photocathode. This structure avoids bombardment of electrons arriving at portions other than the electron incident surface of the semiconductor device and prevents the semiconductor device from being unnecessarily charged.
摘要翻译： 电子管技术领域本发明涉及具有能够长时间稳定工作的结构的电子管。 在电子管中，至少一个限制机构（60,61）布置在光电阴极（22）和半导体器件（40）的电子入射表面之间，它们被布置为通过容器彼此相对。 特别地，限制机构的开口面积小于电子入射面的面积，由此限制来自光电阴极的光电子的轨道。 这种结构避免了轰击到达除半导体器件的电子入射表面以外的部分的电子，并且防止半导体器件被不必要地充电。
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公开(公告)号：EP0860857B1
公开(公告)日：2003-04-23
申请号：EP98301270.9
申请日：1998-02-20
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公开(公告)号：EP0860857A1
公开(公告)日：1998-08-26
申请号：EP98301270.9
申请日：1998-02-20
摘要： An electron tube (1) in which a side tube (10) and a faceplate (21) are sealed together using a malleable metal (23) with a low melting point. The metal (23) is made to spread out along the outer surface of the faceplate (21) due to pressure from a first sealing portion (73) of a sealing metal support member and along the peripheral surface of the electron tube (1) due to pressure from a second sealing portion (74) of the sealing metal support member. Accordingly, the outer side of the corner portion formed by the faceplate (21) and the side tube (10) is covered with the metal (23). This construction not only reliably secures the input faceplate (21) to the side tube (10), but also is extremely effective in preserving the airtightness of the electron tube (1). Since the first sealing portion (73) is pressed toward the faceplate (21), an appropriate pressure can be applied to the metal (23) interposed between the first sealing portion (73) and the faceplate (21), improving the sealability of the metal (23) against the faceplate (21) and the first sealing portion (73). This construction is also appropriate for mass production of electron tubes (1).
摘要翻译： 使用低熔点的可锻金属（23）将侧管（10）和面板（21）密封在一起的电子管（1）。 金属（23）由于来自密封金属支撑构件的第一密封部（73）的压力并且沿着电子管（1）的外周表面而沿着面板（21）的外表面展开，由此 从密封金属支撑构件的第二密封部分（74）施加压力。 因此，由面板（21）和侧管（10）形成的角部的外侧被金属（23）覆盖。 这种结构不仅将输入面板（21）可靠地固定到侧管（10），而且在保持电子管（1）的气密性方面也是非常有效的。 由于第一密封部73被朝向面板21施加压力，因此能够对介于第一密封部73和面板21之间的金属23施加适当的压力，提高密封性 金属（23）抵靠面板（21）和第一密封部分（73）。 这种结构也适用于大量生产电子管（1）。
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公开(公告)号：EP0714117A3
公开(公告)日：1998-03-04
申请号：EP95308117.1
申请日：1995-11-14
CPC分类号： H01L31/1075 , H01J43/04 , H01J43/12
摘要： In a photomultiplier of the present invention, a semiconductor device (60) arranged in an envelope (20) to oppose a photocathode (40) is constituted by a semiconductor substrate of a first conductivity type, a carrier multiplication layer of a second conductivity type different from the first conductivity type, which is formed on the semiconductor substrate by epitaxial growth, a breakdown voltage control layer of the second conductivity type, which is formed on the carrier multiplication layer and has a dopant concentration higher than that of the carrier multiplication layer, a first insulating layer formed on the breakdown voltage control layer and said carrier multiplication layer while partially exposing the surface of the breakdown voltage control layer as a receptor for photoelectrons and consisting of a nitride, and an ohmic electrode layer formed on a peripheral surface portion of the receptor of the breakdown voltage control layer. When the dopant concentration distribution in the carrier multiplication layer is uniformly controlled on the basis of epitaxial growth, the uniformity of an avalanche multiplication gain for photoelectrons incident at different positions on the receptor of the semiconductor device is improved, thereby largely increasing the energy resolving power.
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