公开(公告)号：EP2288894A1

公开(公告)日：2011-03-02

申请号：EP09745456.5

申请日：2009-05-13

申请人： Helmholtz-Zentrum Berlin für Materialien und Energie GmbH

发明人： RODRIGUEZ-ALVAREZ, Humberto ,  KÖTSCHAU, Immo

IPC分类号： G01L21/12 ,  H01L31/18

CPC分类号： G01L21/12 ,  H01L31/0322 ,  H01L31/20 ,  Y02E10/541 ,  Y02P70/521

摘要： In order to efficiently produce especially semiconducting chalcogenide layers for use in CIS solar cells, a reaction box is inserted into the reaction chamber of a rapid thermal processing (RTP) vacuum furnace. The quality of the layer to be produced is regulated with the help of the process pressure (P
P ) which is determined
in situ by optically measuring the deflection of a membrane in the reaction box, said membrane being used as a pressure sensor. However, said measurement is erroneous because of the large temperature variations during RTP and can be used only with a membrane having a certain minimum size. According to the invention, a separate pressure measuring unit (08) is provided outside the RTP vacuum furnace (05). Said pressure measuring unit (08) can be gas-tightly connected to the reaction box (02) via a supply pipe (11) and comprises a measuring chamber (09) and a pressure sensor (10), preferably a Pirani-type thermal conductivity gauge (15). At least the supply pipe (11) is kept, by means of a heating device (12), at a constant temperature (T
A ) that is thermally disconnected from the RTP, lies below the process temperature (T
P ) but above the condensation temperature (T
K ) of the process gas, and is transferred to the process gas as the measured temperature (T
M ) when the process gas penetrates into the pressure measuring unit (08).