公开(公告)号：EP2342007A1

公开(公告)日：2011-07-13

申请号：EP09744514.2

申请日：2009-10-12

申请人： Hemlock Semiconductor Corporation

发明人： MOLNAR, Michael

IPC分类号： B01J8/24 ,  C01B33/029 ,  F23C10/20 ,  C01B33/03 ,  C01B33/035

CPC分类号： F23C10/20 ,  B01J8/18 ,  B01J8/1818 ,  B01J8/1827 ,  B01J2219/00252 ,  C01B33/029 ,  C01B33/03 ,  Y02P20/132

摘要： Silicon deposits are suppressed at the wall of a fluidized bed reactor by a process in which an etching gas is fed near the wall of the reactor. The etching gas includes tetrachlorosilane. A Siemens reactor may be integrated into the process such that the vent gas from the Siemens reactor is used to form a feed gas and/or etching gas fed to the fluidized bed reactor.

摘要翻译： 硅押金由在其中的蚀刻气体在反应器壁附近供给的过程在流化床反应器的壁抑制。 蚀刻气体包括的SiCl。 西门子反应器可以被集成到检查的过程所做的排放气从西门子反应器被用于形成馈送到所述流化床反应器的进料气体和/或腐蚀气体。

公开(公告)号：EP2265883A1

公开(公告)日：2010-12-29

申请号：EP09733051.8

申请日：2009-04-13

申请人： Hemlock Semiconductor Corporation

发明人： DEHTIAR, Max ,  HILLABRAND, David ,  KNAPP, Theodore ,  MCCOY, Keith ,  MOLNAR, Michael

IPC分类号： F28F13/18 ,  C23C16/44 ,  C01B33/035

CPC分类号： B23K10/02 ,  C23C16/4418 ,  H05B3/03

摘要： The present invention relates to a manufacturing apparatus for deposition of a material on a carrier body and an electrode for use with the manufacturing apparatus. Typically, the carrier body has a first end and a second end spaced from each other. A socket is disposed at each of the end of the carrier body. The apparatus includes a housing that defines a chamber. At least one electrode is disposed through the housing for receiving the socket. The electrode includes an interior surface that defines a channel. The electrode heats the carrier body to a necessary deposition temperature by direct passage of electrical current to the carrier body. A coolant is in fluid communication with the channel of the electrode for reducing the temperature of the electrode. A channel coating is disposed in the interior surface of the electrode for preventing loss of heat transfer between the coolant and the interior surface.

公开(公告)号：EP2057095A1

公开(公告)日：2009-05-13

申请号：EP07809525.4

申请日：2007-06-14

申请人： Hemlock Semiconductor Corporation

发明人： ARVIDSON, Arvid Neil ,  MOLNAR, Michael

IPC分类号： C01B33/035 ,  C01B33/03

CPC分类号： C01B33/035 ,  C01B33/03 ,  C01B33/033 ,  Y02P20/132

摘要： A fluidized bed reactor and a Siemens reactor are used to produce polycrystalline silicon. The process includes feeding the vent gas from the Siemens reactor as a feed gas to the fluidized bed reactor.