公开(公告)号：EP2454394A1

公开(公告)日：2012-05-23

申请号：EP10737413.4

申请日：2010-07-14

申请人： Hemlock Semiconductor Corporation

发明人： DEHTIAR, Max ,  GIARDINA, Jason ,  VANDERHOVEL, Jaime ,  HOFMEISTER, Michael ,  MOLNAR, Michael, John ,  STRATTON, Robert, E. ,  PAWELKOWSKI, Stephen

IPC分类号： C23C16/44 ,  C23C16/458 ,  C23C16/52 ,  F25B43/00 ,  F25B47/00 ,  C23C16/24

CPC分类号： C23C16/44 ,  C23C16/24 ,  C23C16/458 ,  C23C16/4586 ,  C23C16/52

摘要： A method inhibits formation of deposits on a cooling surface of an electrode. The electrode is used in a manufacturing system that deposits a material on a carrier body. The cooling surface comprises copper. The system includes a reactor defining a chamber. The electrode is at least partially disposed within the chamber and supports the carrier body. A circulation system, in fluid communication with the electrode, transports a coolant composition to and from the cooling surface. The coolant composition comprises a coolant and dissolved copper from the cooling surface. A filtration system is in fluid communication with the circulation system. The method heats the electrode. The cooling surface of the electrode is contacted with the coolant composition. The material is deposited on the carrier body, and the coolant composition is filtered with the filtration system to remove at least a portion of the dissolved copper therefrom.

公开(公告)号：EP2265883A1

公开(公告)日：2010-12-29

申请号：EP09733051.8

申请日：2009-04-13

申请人： Hemlock Semiconductor Corporation

发明人： DEHTIAR, Max ,  HILLABRAND, David ,  KNAPP, Theodore ,  MCCOY, Keith ,  MOLNAR, Michael

IPC分类号： F28F13/18 ,  C23C16/44 ,  C01B33/035

CPC分类号： B23K10/02 ,  C23C16/4418 ,  H05B3/03

摘要： The present invention relates to a manufacturing apparatus for deposition of a material on a carrier body and an electrode for use with the manufacturing apparatus. Typically, the carrier body has a first end and a second end spaced from each other. A socket is disposed at each of the end of the carrier body. The apparatus includes a housing that defines a chamber. At least one electrode is disposed through the housing for receiving the socket. The electrode includes an interior surface that defines a channel. The electrode heats the carrier body to a necessary deposition temperature by direct passage of electrical current to the carrier body. A coolant is in fluid communication with the channel of the electrode for reducing the temperature of the electrode. A channel coating is disposed in the interior surface of the electrode for preventing loss of heat transfer between the coolant and the interior surface.

公开(公告)号：EP2745341A1

公开(公告)日：2014-06-25

申请号：EP12750677.2

申请日：2012-08-14

申请人： Dow Corning Corporation ,  Dow Corning Toray Co., Ltd. ,  Hemlock Semiconductor Corporation

发明人： DEHTIAR, Max ,  FISHER, Paul ,  GAVE, Matthew, A. ,  HERRON, William ,  HINO, Takakazu ,  HWANG, Byung, K. ,  LARIMER, Jennifer ,  LEE, Jeong, Yong ,  MCDONALD, Joel, P. ,  SCHRAUBEN, Mark ,  TABLER, Raymond

IPC分类号： H01M4/134 ,  H01M4/139 ,  H01M4/02 ,  H01M4/04 ,  H01M4/1395

CPC分类号： H01M4/386 ,  C01B33/027 ,  H01M4/134 ,  H01M4/1395 ,  Y10T428/2982

摘要： An electrode composition comprises a silicon powder comprising non- crystalline and crystalline silicon, where the crystalline silicon is present in the silicon powder at a concentration of no more than about 20 wt.%. An electrode for an electrochemical cell comprises an electrochemically active material comprising non-crystalline silicon and crystalline silicon, where the non-crystalline silicon and the crystalline silicon are present prior to cycling of the electrode. A method of controlling the crystallinity of a silicon powder includes heating a reactor to a temperature of no more than 650°C and flowing a feed gas comprising silane and a carrier gas into the reactor while maintaining an internal reactor pressure of about 2 atm or less. The silane decomposes to form a silicon powder having a controlled crystallinity and comprising non-crystalline silicon.

公开(公告)号：EP2720787A1

公开(公告)日：2014-04-23

申请号：EP12729786.9

申请日：2012-06-14

申请人： Hemlock Semiconductor Corporation

发明人： BARANOWSKI, Don ,  BISHOP, Matthew ,  DEHTIAR, Max ,  MOLNAR, Michael, John ,  NABERHAUS, P., Christian

IPC分类号： B01J8/18 ,  C01B33/027 ,  B01J8/00 ,  B65G53/46

CPC分类号： B01J8/003 ,  B01J8/0045 ,  B01J8/1827 ,  B01J8/24 ,  B01J2208/00752 ,  B01J2208/00761 ,  B65G53/4658 ,  F16K5/0605

摘要： A dome valve selectively dispenses a silicon product from a chamber of a vessel. The dome valve comprises a valve body defining a pass-through channel in communication with the chamber of the vessel to allow the silicon product to exit the vessel. The dome valve also comprising a valve seat defining an opening through which the silicon product enters the pass-through channel. The dome valve further comprising a domed body having a semi-hemispherical configuration. The domed body has a sealing surface. The domed body is rotatable between a closed position and an open position for allowing the selective dispensing of the silicon product from the vessel.

摘要翻译： 圆顶阀从容器的腔室选择性地分配硅产品。 圆顶阀包括阀体，其限定与容器的腔室连通的通过通道，以允许硅产品离开容器。 圆顶阀还包括限定开口的阀座，硅产品通过该开口进入通过通道。 圆顶阀还包括具有半半球形结构的圆顶体。 圆顶体具有密封面。 圆顶体可在关闭位置和打开位置之间旋转，以允许从容器选择性地分配硅产品。