公开(公告)号：EP1812976B1

公开(公告)日：2010-09-08

申请号：EP05801866.4

申请日：2005-09-27

申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

发明人： ULMER, Kurt ,  WENG, Jian-gang ,  MARDILOVICH, Peter ,  RUDIN, John Christopher

IPC分类号： H01L45/00 ,  G02F1/1365

CPC分类号： H01L45/00

公开(公告)号：EP1812976A1

公开(公告)日：2007-08-01

申请号：EP05801866.4

申请日：2005-09-27

申请人： Hewlett-Packard Development Company, L.P.

发明人： ULMER, Kurt ,  WENG, Jian-gang ,  MARDILOVICH, Peter ,  RUDIN, John Christopher

IPC分类号： H01L45/00 ,  G02F1/1365

CPC分类号： H01L45/00

摘要： A method for forming a metal-insulator-metal device (24, 124, 224, 424) includes imprinting at least one first layer (620) to form a first depression (636), removing a portion of at least one second layer (610) through the first depression (636) to form a recess (640) in the at least one second layer (610) bordered by a first side (642), a first overhang (646) along the first side (642), a second opposite side (644) and a second overhang (648) along the second side (644). The method also includes depositing a first metal (452) in the recess (640) spaced from the first side (642) and the second side (644) and oxidizing the first metal (452) to create a non-linear dielectric (661).