公开(公告)号：EP0939524A1

公开(公告)日：1999-09-01

申请号：EP99103808.4

申请日：1999-02-26

申请人： Hitachi, Ltd.

发明人： Yukutake, Seigoh ,  Kojima, Yasuyuki ,  Nemoto, Minehiro ,  Amishiro, Masatsugu ,  Iwasaki, Takayuki ,  Mitani, Shinichiro ,  Furukawa, Katsuhiro ,  Kamada, Chiyoshi ,  Watanabe, Atsuo ,  Oouchi, Takayuki ,  Kanekawa, Nobuyasu

IPC分类号： H04L25/02 ,  H01L23/522 ,  H01L23/64

CPC分类号： H04L25/0266 ,  H01L2924/0002 ,  H04L25/0268 ,  H04L25/0272 ,  H04L25/028 ,  H04L25/0292 ,  H04L27/0002 ,  H04M11/06 ,  H01L2924/00

摘要： An monolithic isolator is made by forming a capacitive insulating barrier using an interlayer insulation film on a semiconductor substrate to miniaturise a modem device using the monolithic isolator.

摘要翻译： 通过使用半导体衬底上的层间绝缘膜形成电容绝缘阻挡层来制造单片隔离器，以使使用该单片隔离器使调制解调器装置小型化。

公开(公告)号：EP0872894A3

公开(公告)日：1999-01-07

申请号：EP98106923.0

申请日：1998-04-16

申请人： Hitachi, Ltd.

发明人： Iwasaki, Takayuki ,  Ohno, Toshiyuki ,  Yatsuo, Tsutomu

IPC分类号： H01L29/772 ,  H01L29/739 ,  H03K17/00 ,  H01L21/66

CPC分类号： H01L29/1608 ,  H01L29/66068 ,  H01L29/7392 ,  H01L29/7722 ,  H03K17/687

摘要： In a silicon carbide static induction transistor, at a surface part of a semiconductor substrate, a p-type gate region (3) is formed partially overlapping a n-type source region (4), whereby the high accuracy in alignment between the gate region and the source region is not required, and the gate withstand voltage can be highly increased since the substrate is made of silicon carbide, which improves the yield of static induction transistors.

公开(公告)号：EP0872894A2

公开(公告)日：1998-10-21

申请号：EP98106923.0

申请日：1998-04-16

申请人： Hitachi, Ltd.

发明人： Iwasaki, Takayuki ,  Ohno, Toshiyuki ,  Yatsuo, Tsutomu

IPC分类号： H01L29/772 ,  H01L29/739 ,  H03K17/00 ,  H01L21/66

CPC分类号： H01L29/1608 ,  H01L29/66068 ,  H01L29/7392 ,  H01L29/7722 ,  H03K17/687

摘要： In a silicon carbide static induction transistor, at a surface part of a semiconductor substrate, a p-type gate region (3) is formed partially overlapping a n-type source region (4), whereby the high accuracy in alignment between the gate region and the source region is not required, and the gate withstand voltage can be highly increased since the substrate is made of silicon carbide, which improves the yield of static induction transistors.

摘要翻译： 在碳化硅静电感应晶体管中，在半导体衬底的表面部分，形成与n型源极区域（4）部分重叠的p型栅极区域（3），由此栅极区域 并且不需要源极区域，并且由于基板由碳化硅制成，所以栅极耐受电压可以高度提高，这提高了静电感应晶体管的产量。