公开(公告)号：EP0066429A2

公开(公告)日：1982-12-08

申请号：EP82302613.3

申请日：1982-05-21

申请人： Hitachi, Ltd.

发明人： Minato, Osamu ,  Masuhara, Toshiaki ,  Sasaki, Toshio ,  Sasaki, Yukio ,  Kinoshita, Masami ,  Sakai, Yoshio ,  Nagasawa, Kouichi

IPC分类号： G11C5/00

CPC分类号： G11C5/005 ,  G11C11/412 ,  H01L27/092 ,  H01L27/11 ,  H01L27/1112

摘要： A semiconductor memory wherein a semiconductor substrate (1) includes a well (3) of selected depth and of a conductivity type opposite to that of the substrate, a MOS transistor circuit constituting a memory cell formed in the surface region of the well and having information storage nodes the lower part of which is covered with an impurity region (30, 40, 56) of the same conductivity type as the well and being shallower in depth and higher in impurity concentration than the well.

摘要翻译： 一种半导体存储器，其中半导体衬底（1）包括具有选定深度的阱（3）和与衬底相反的导电类型的阱（3），MOS晶体管电路构成形成在阱的表面区域中并具有信息的存储单元 存储节点的下部覆盖有与阱相同导电类型的杂质区（30,40,56），并且深度较浅，杂质浓度高于阱。

公开(公告)号：EP0066429A3

公开(公告)日：1983-12-14

申请号：EP82302613

申请日：1982-05-21

申请人： Hitachi, Ltd.

发明人： Minato, Osamu ,  Masuhara, Toshiaki ,  Sasaki, Toshio ,  Sasaki, Yukio ,  Kinoshita, Masami ,  Sakai, Yoshio ,  Nagasawa, Kouichi

IPC分类号： G11C05/00

CPC分类号： G11C5/005 ,  G11C11/412 ,  H01L27/092 ,  H01L27/11 ,  H01L27/1112

摘要： A semiconductor memory wherein a semiconductor substrate (1) includes a well (3) of selected depth and of a conductivity type opposite to that of the substrate, a MOS transistor circuit constituting a memory cell formed in the surface region of the well and having information storage nodes the lower part of which is covered with an impurity region (30, 40, 56) of the same conductivity type as the well and being shallower in depth and higher in impurity concentration than the well.

摘要翻译： 一种半导体存储器，其中半导体衬底（1）包括具有选定深度的阱（3）并且导电类型与衬底的导电类型相反，构成存储单元的MOS晶体管电路形成在阱的表面区域并具有信息 存储节点的下部覆盖有与阱相同导电类型的杂质区（30,40,56），并且其深度较浅且杂质浓度高于阱。