公开(公告)号：EP1387389A2

公开(公告)日：2004-02-04

申请号：EP03016314.1

申请日：2003-07-18

申请人： Hitachi, Ltd. ,  CANON KABUSHIKI KAISHA ,  Advantest Corporation

发明人： Yoda, Haruo ,  Souda, Yasunari, Hitachi, Ltd. ,  Ohta, Hiroya, Hitachi, Ltd. ,  Yui, Yoshikiyo ,  Hashimoto, Shinichi

IPC分类号： H01J37/317

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3177 ,  H01J2237/31764 ,  H01J2237/31767

摘要： The dimension of the main field as a unit region for exposure is set to an integral submultiple of the arrangement pitch of the LSI to be exposed, by the control computer 62, and the exposure data stored in the form associated with electron beams from a data generation circuit 64 is limited to one-chip data alone in units of a stripe. This data is repeatedly read out to write the stripe. Further, a storage circuit 66 is provided to store the exposure data by means of a double buffer memory unit for each electron beam. While LSI is written according to one of the buffers, the next exposure stripe data is prepared on the other buffer, thereby bringing about a substantial reduction in the required speed of the exposure data generation circuit.

摘要翻译： 作为曝光的单位区域的主场的尺寸被控制计算机62设定为要暴露的LSI的排列间距的整数倍，并且以与数据相关联的形式存储的曝光数据 发生电路64仅以条形为单位限于单芯片数据。 该数据被重复读出以写入条带。 此外，提供存储电路66以通过用于每个电子束的双缓冲存储器单元来存储曝光数据。 当根据其中一个缓冲器写入LSI时，在另一个缓冲器上准备下一个曝光条纹数据，从而显着降低曝光数据产生电路的所需速度。

公开(公告)号：EP1387389A3

公开(公告)日：2006-01-04

申请号：EP03016314.1

申请日：2003-07-18

申请人： Hitachi, Ltd. ,  CANON KABUSHIKI KAISHA ,  ADVANTEST CORPORATION

发明人： Yoda, Haruo ,  Souda, Yasunari, Hitachi, Ltd. ,  Ohta, Hiroya, Hitachi, Ltd. ,  Yui, Yoshikiyo ,  Hashimoto, Shinichi

IPC分类号： H01J37/317

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3177 ,  H01J2237/31764 ,  H01J2237/31767

摘要： The dimension of the main field as a unit region for exposure is set to an integral submultiple of the arrangement pitch of the LSI to be exposed, by the control computer 62, and the exposure data stored in the form associated with electron beams from a data generation circuit 64 is limited to one-chip data alone in units of a stripe. This data is repeatedly read out to write the stripe. Further, a storage circuit 66 is provided to store the exposure data by means of a double buffer memory unit for each electron beam. While LSI is written according to one of the buffers, the next exposure stripe data is prepared on the other buffer, thereby bringing about a substantial reduction in the required speed of the exposure data generation circuit.