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    CROSS SCAN PROXIMITY CORRECTION WITH EBEAM UNIVERSAL CUTTER
    5.
    发明公开
    CROSS SCAN PROXIMITY CORRECTION WITH EBEAM UNIVERSAL CUTTER 审中-公开
    EBEAM通用切割器的交叉扫描接近度校正

    公开(公告)号：EP3183743A1

    公开(公告)日：2017-06-28

    申请号：EP14900280.0

    申请日：2014-12-22

    申请人： Intel Corporation

    发明人： BORODOVSKY, Yan A.

    IPC分类号： H01L21/027

    CPC分类号： G03F7/2037 ,  H01J37/045 ,  H01J37/3026 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/0453 ,  H01J2237/303 ,  H01J2237/30422 ,  H01J2237/30438 ,  H01J2237/31762 ,  H01J2237/31764 ,  H01J2237/31769 ,  H01L21/0277 ,  H01L21/0337 ,  H01L21/308 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76816

    摘要： Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a column for an e-beam direct write lithography tool includes a first blanker aperture array (BAA) including a staggered array of openings having a pitch along an array direction. The array direction is orthogonal to a scan direction. Each opening has a first dimension in the array direction. The column also includes a second BAA including a staggered array of openings having the pitch along the array direction. Each opening has a second dimension in the array direction, the second dimension greater than the first dimension.

    摘要翻译： 描述了适合于和互补电子束光刻（CEBL）的方法的光刻设备。 在一个示例中，用于电子束直接写入光刻工具的列包括第一消隐器孔径阵列（BAA），第一消隐器孔径阵列（BAA）包括具有沿阵列方向的间距的交错开口阵列。 阵列方向与扫描方向正交。 每个开口在阵列方向上具有第一维度。 该列还包括第二BAA，其包括具有沿着阵列方向的节距的交错排列的开口。 每个开口在阵列方向上具有第二维度，第二维度大于第一维度。

    CORNER ROUNDING CORRECTION FOR ELECTRON BEAM (EBEAM) DIRECT WRITE SYSTEM
    6.
    发明公开
    CORNER ROUNDING CORRECTION FOR ELECTRON BEAM (EBEAM) DIRECT WRITE SYSTEM 审中-公开
    电子束（EBEAM）直写系统的拐角校正

    公开(公告)号：EP3183742A1

    公开(公告)日：2017-06-28

    申请号：EP14900063.0

    申请日：2014-12-22

    申请人： Intel Corporation

    发明人： BORODOVSKY, Yan A.

    IPC分类号： H01L21/027

    CPC分类号： H01J37/045 ,  H01J37/3026 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/0453 ,  H01J2237/30422 ,  H01J2237/30438 ,  H01J2237/31762 ,  H01J2237/31764 ,  H01J2237/31769

    摘要： Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool includes a first column of openings along a first direction, each of the openings of the first column of openings having dog-eared corners. The BAA also includes a second column of openings along the first direction and staggered from the first column of openings, each of the openings of the second column of openings having dog-eared corners. The first and second columns of openings together form an array having a pitch in the first direction. A scan direction of the BAA is along a second direction, orthogonal to the first direction. The pitch of the array corresponds to half of a minimal pitch layout of a target pattern of lines for orientation parallel with the second direction.

    摘要翻译： 描述了适合于和互补电子束光刻（CEBL）的方法的光刻设备。 在一个示例中，用于电子束工具的消隐器孔阵列（BAA）包括沿第一方向的第一列开口，第一列开口中的每个开口具有狗耳角。 BAA还包括沿着第一方向并与第一列开口交错的第二列开口，第二列开口中的每个开口具有狗耳角。 第一列和第二列开口一起形成在第一方向上具有间距的阵列。 BAA的扫描方向沿着与第一方向正交的第二方向。 阵列的间距对应于与第二方向平行的目标线图案的最小间距布局的一半。

    EXPOSURE APPARATUS AND EXPOSURE METHOD
    9.
    发明公开
    EXPOSURE APPARATUS AND EXPOSURE METHOD 审中-公开

    公开(公告)号：EP3038130A3

    公开(公告)日：2016-10-19

    申请号：EP15189949.9

    申请日：2015-10-15

    申请人： ADVANTEST CORPORATION

    发明人： Yamada, Akio ,  Sugatani, Shinji ,  Kurokawa, Masaki ,  Seyama, Masahiro

    IPC分类号： H01J37/04 ,  H01J37/317

    CPC分类号： H01J37/3174 ,  H01J37/045 ,  H01J37/3177 ,  H01J2237/31761 ,  H01J2237/31766 ,  H01J2237/31774

    摘要： To form a complex and fine pattern by combining optical exposure technology and charged particle beam exposure technology, provided is an exposure apparatus that radiates a charged particle beam at a position corresponding to a line pattern on a sample, including a beam generating section (20, 30, 40, 50) that generates a plurality of the charged particle beams at different irradiation positions in a width direction (Y) of the line pattern; a scanning control section (190) that performs scanning with the irradiation positions of the charged particle beams along a longitudinal direction (X) of the line pattern; a selecting section (160) that selects at least one charged particle beam to irradiate the sample from among the plurality of charged particle beams, at a designated irradiation position in the longitudinal direction of the line pattern; and an irradiation control section (170) that controls the at least one selected charged particle beam to irradiate the sample.