摘要:
Disclosed are a phosphor pattern which comprises a substrate having unevenness and a phosphor layer formed on the inner surface of a concave portion of the substrate, wherein when the length from the bottom of the concave portion to the top of a convex portion is L (µm), the phosphor pattern thickness ratio (x)/(y) of the thickness (x) of the phosphor pattern formed on an uneven wall surface at a position of 0.9 x L from the bottom of the concave portion toward the top of the convex portion to the thickness (y) of the phosphor pattern formed on the uneven wall surface at a position of 0.4 x L from the bottom of the concave portion toward the top of the convex portion satisfies a range of 0.1 to 1.5, and processes for preparing the same.
摘要:
Disclosed are a phosphor pattern which comprises a substrate having unevenness and a phosphor layer formed on the inner surface of a concave portion of the substrate, wherein when the length from the bottom of the concave portion to the top of a convex portion is L (µm), the phosphor pattern thickness ratio (x)/(y) of the thickness (x) of the phosphor pattern formed on an uneven wall surface at a position of 0.9 x L from the bottom of the concave portion toward the top of the convex portion to the thickness (y) of the phosphor pattern formed on the uneven wall surface at a position of 0.4 x L from the bottom of the concave portion toward the top of the convex portion satisfies a range of 0.1 to 1.5, and processes for preparing the same.