公开(公告)号：EP3961635A1

公开(公告)日：2022-03-02

申请号：EP20810018.0

申请日：2020-05-21

申请人： Huawei Technologies Co., Ltd. ,  Tsinghua University

发明人： GAO, Bin ,  WANG, Kanwen ,  CHEN, Junren ,  ZHANG, Rui ,  WU, Huaqiang

IPC分类号： G11C13/00

摘要： This application provides a storage device and a data writing method. The storage device may be used in a neural network. The storage device includes a memristor unit, a current-controlled circuit, and a write circuit. The memristor unit has a structure of one-transistor and one-resistive random access memory 1TIR. The current-controlled circuit is configured to limit a current passing through the memristor unit to a target current, where the target current is determined based on target conductance of the memristor unit and a gate voltage of the transistor, and the target conductance is used to indicate target data to be written into the memristor unit. The write circuit is configured to load a write voltage to the memristor unit in cooperation with the current-controlled circuit, to write the target data to the memristor unit.