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1.发明公开Heterojunction bipolar transistor fabrication method with low temperature base growth 失效一种用于通过低温生长的装置生产具有异质结基极的双极型晶体管的过程。
公开(公告)号：EP0607935A3
公开(公告)日：1997-09-24
申请号：EP94100699.1
申请日：1994-01-19
IPC分类号： H01L21/331 , H01L29/73 , H01L21/203
CPC分类号： H01L29/7371 , H01L21/02392 , H01L21/02463 , H01L21/02507 , H01L21/02546 , H01L21/02579 , H01L21/02631 , H01L29/66318
摘要： Diffusion of p-type Be dopant out of the base (40) of an npn heterojunction bipolar transistor (HBT) during the transistor fabrication is prevented by growing the base (40) at a low temperature, generally within the range of about 280°-420°C for a AlInAs/GaInAs device. The DC current gain is maximized by growing the base (40) at the highest permissible temperature before outdiffusion occurs, which is substantially above the Be precipitation temperature.
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2.发明公开Heterojunction bipolar transistor fabrication method with low temperature base growth 失效一种用于通过低温生长的装置生产具有异质结基极的双极型晶体管的过程。
公开(公告)号：EP0607935A2
公开(公告)日：1994-07-27
申请号：EP94100699.1
申请日：1994-01-19
IPC分类号： H01L21/331 , H01L29/73 , H01L21/203
CPC分类号： H01L29/7371 , H01L21/02392 , H01L21/02463 , H01L21/02507 , H01L21/02546 , H01L21/02579 , H01L21/02631 , H01L29/66318
摘要： Diffusion of p-type Be dopant out of the base (40) of an npn heterojunction bipolar transistor (HBT) during the transistor fabrication is prevented by growing the base (40) at a low temperature, generally within the range of about 280°-420°C for a AlInAs/GaInAs device. The DC current gain is maximized by growing the base (40) at the highest permissible temperature before outdiffusion occurs, which is substantially above the Be precipitation temperature.
摘要翻译： p型的扩散成为掺杂剂出晶体管的制造过程中的NPN异质结双极晶体管（HBT）的基部（40）是由在低温下生长所述基座（40）阻止，约280°的范围内基因反弹 - 420℃下一个的AlInAs / GaInAs的设备。 直流电流增益由生长在最高容许温度的基座（40）发生之前的向外扩散，所有这些是基本上高于所述装载析出温度最大化。
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